BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
P R O D U C T
I N F O R M A T I O N
1
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
125 W at 25C Case Temperature
12 A Continuous Collector Current
Minimum h
FE
of 1000 at 4 V, 5 A
absolute maximum ratings at 25C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
0.1 ms, duty cycle 10%
2. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
3. Derate linearly to 150C free air temperature at the rate of 28 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDV64
BDV64A
BDV64B
BDV64C
V
CBO
-60
-80
-100
-120
V
Collector-emitter voltage (I
B
= 0)
BDV64
BDV64A
BDV64B
BDV64C
V
CEO
-60
-80
-100
-120
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-12
A
Peak collector current (see Note 1)
I
CM
-15
A
Continuous base current
I
B
-0.5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
125
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
3.5
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
2
P R O D U C T
I N F O R M A T I O N
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
I
B
= 0
(see Note 4)
BDV64
BDV64A
BDV64B
BDV64C
-60
-80
-100
-120
V
I
CEO
Collector-emitter
cut-off current
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
BDV64
BDV64A
BDV64B
BDV64C
-2
-2
-2
-2
mA
I
CBO
Collector cut-off
current
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
CB
= -120 V
V
CB
= -30 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
T
C
= 150C
T
C
= 150C
T
C
= 150C
T
C
= 150C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
-0.4
-0.4
-0.4
-0.4
-2
-2
-2
-2
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-5
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
I
C
= -5 A
(see Notes 4 and 5)
1000
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -20 mA
I
C
= -5 A
(see Notes 4 and 5)
-2
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
I
C
= -5 A
(see Notes 4 and 5)
-2.5
V
V
EC
Parallel diode
forward voltage
I
E
= -10 A
I
B
= 0
(see Notes 4 and 5)
-3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1
C/W
R
JA
Junction to free air thermal resistance
35.7
C/W
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
3
P R O D U C T
I N F O R M A T I O N
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
h
FE
-
T
y
pi
c
a
l
D
C
Cu
r
r
e
n
t
G
a
in
100
1000
10000
TCS145AD
T
C
= -40C
T
C
= 25C
T
C
= 100C
V
CE
= -4 V
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
CE
(
s
a
t
)
- Co
l
l
e
c
to
r-E
m
i
tte
r
Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
-20
-15
-10
-05
0
TCS145AE
T
C
= -40C
T
C
= 25C
T
C
= 100C
t
p
= 300 s, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-05
-20
-10
-10
V
BE
(
s
a
t
)
- Ba
s
e
-
Em
i
tte
r Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
-30
-25
-20
-10
-15
-05
0
TCS145AF
T
C
= -40C
T
C
= 25C
T
C
= 100C
I
B
= I
C
/ 100
t
p
= 300 s, duty cycle < 2%
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
4
P R O D U C T
I N F O R M A T I O N
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
to
t
-
M
a
x
i
m
u
m
P
o
w
e
r
D
i
ss
i
p
at
i
o
n
-
W
0
20
40
60
80
100
120
140
TIS140AA
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
5
P R O D U C T
I N F O R M A T I O N
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1
2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
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