BUL770
NPN SILICON POWER TRANSISTOR
P R O D U C T
I N F O R M A T I O N
1
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
h
FE
7 to 21 at V
CE
= 1 V, I
C
= 800 mA
Low Power Losses (On-state and Switching)
Key Parameters Characterised at High
Temperature
Tight and Reproducible Parametric
Distributions
NOTES: 1. This value applies for t
p
= 10 ms, duty cycle
2%.
2. This value applies for t
p
= 300 s, duty cycle
2%.
absolute maximum ratings at 25C ambient temperature (unless otherwise noted )
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V
BE
= 0)
V
CES
700
V
Collector-base voltage (I
E
= 0)
V
CBO
700
V
Collector-emitter voltage (I
B
= 0)
V
CEO
400
V
Emitter-base voltage
V
EBO
9
V
Continuous collector current
I
C
2.5
A
Peak collector current (see Note 1)
I
CM
6
A
Peak collector current (see Note 2)
I
CM
8
A
Continuous base current
I
B
1.5
A
Peak base current (see Note 2)
I
BM
2.5
A
Continuous device dissipation at (or below) 25C case temperature
P
tot
50
W
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BUL770
NPN SILICON POWER TRANSISTOR
2
P R O D U C T
I N F O R M A T I O N
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. Inductive loop switching measurement.
4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
CEO(sus)
Collector-emitter
sustaining voltage
I
C
= 100 mA
L = 25 mH
(see Note 3)
400
V
I
CES
Collector-emitter
cut-off current
V
CE
= 700 V
V
CE
= 700 V
V
BE
= 0
V
BE
= 0
T
C
= 90C
10
200
A
I
EBO
Emitter cut-off
current
V
EB
= 9 V
I
C
= 0
1
mA
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 160 mA
I
B
= 160 mA
I
C
= 800 mA
I
C
= 800 mA
(see Notes 4 and 5)
T
C
= 90C
0.83
0.75
0.9
V
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 160 mA
I
B
= 160 mA
I
C
= 800 mA
I
C
= 800 mA
(see Notes 4 and 5)
T
C
= 90C
0.18
0.22
0.25
V
h
FE
Forward current
transfer ratio
V
CE
= 1 V
V
CE
= 1 V
V
CE
= 5 V
I
C
= 10 mA
I
C
= 800 mA
I
C
= 3.2 A
10
7
2
18.5
14.5
7.5
21
14
V
FCB
Collector-base forward
bias diode voltage
I
CB
= 60 mA
870
mV
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
62.5
C/W
R
JC
Junction to case thermal resistance
2.5
C/W
inductive-load switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
sv
Storage time
I
C
= 800 mA
L = 1 mH
I
B(on)
= 160 mA
I
B(off)
= 320 mA
V
CC
= 40 V
V
CLAMP
= 300 V
2.5
3
s
t
fi
Current fall time
150
190
ns
t
xo
Cross over time
300
400
ns
t
sv
Storage time
I
C
= 800 mA
L = 1 mH
I
B(on)
= 160 mA
I
B(off)
= 100 mA
V
CC
= 40 V
V
CLAMP
= 300 V
4.3
5
s
t
fi
Current fall time
140
200
ns
resistive-load switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
sv
Storage time
I
C
= 800 mA
V
CC
= 300 V
I
B(on)
= 160 mA
I
B(off)
= 160 mA
2.5
3.4
s
t
fi
Current fall time
150
250
ns
BUL770
NPN SILICON POWER TRANSISTOR
3
P R O D U C T
I N F O R M A T I O N
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
Figure 4.
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
001
01
10
10
h
FE
-
Fo
r
w
a
r
d
C
u
r
r
e
n
t
Tr
a
n
s
f
e
r
R
a
t
i
o
30
10
10
L770CHF
T
C
= 25C
V
CE
= 1 V
V
CE
= 5 V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
V
CE
(
s
a
t
)
- Co
l
l
e
c
to
r-E
m
i
tte
r Sa
t
u
ra
t
i
o
n
Vo
l
t
a
g
e
- V
001
01
10
10
L770CVB
I
B
= I
C
/ 5
T
C
= 25C
T
C
= 90C
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
I
n
d
u
ct
i
ve S
w
i
t
c
h
i
n
g
T
i
m
e
-
s
001
01
10
10
L770CI1
I
B(on)
= I
C
/ 5
I
B(off)
= I
C
/ 2.5
V
CC
= 40 V
V
CLAMP
= 300 V
L = 1 mH
T
C
= 25C
t
sv
t
xo
t
fi
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
20
40
60
80
100
I
n
d
u
ct
i
ve S
w
i
t
c
h
i
n
g
T
i
m
e
-
s
01
10
10
L770CI3
t
sv
t
fi
I
B(on)
= 160 mA, V
CC
= 40 V, L
= 1 mH
I
B(off)
= 320 mA, V
CLAMP
= 300 V, I
C
= 800 mA
BUL770
NPN SILICON POWER TRANSISTOR
4
P R O D U C T
I N F O R M A T I O N
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 5.
Figure 6.
Figure 7.
Figure 8.
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
I
n
d
u
ct
i
ve S
w
i
t
c
h
i
n
g
T
i
m
e
-
s
01
10
10
L770CI2
t
sv
t
fi
I
B(on)
= I
C
/ 5
I
B(off)
= I
C
/ 8
V
CC
= 40 V
V
CLAMP
= 300 V
L = 1 mH
T
C
= 25C
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
20
40
60
80
100
I
n
d
u
ct
i
ve S
w
i
t
c
h
i
n
g
T
i
m
e
-
s
01
10
10
L770CI4
t
sv
t
fi
I
B(on)
= 160 mA, V
CC
= 40 V, L = 1 mH
I
B(off)
= 100 mA, V
CLAMP
= 300 V, I
C
= 800 mA
RESISTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
R
e
si
st
i
ve S
w
i
t
c
h
i
n
g
T
i
m
e
-
s
01
10
10
L770CR1
I
B(on)
= I
C
/ 5, V
CC
= 300 V
I
B(off)
= I
C
/ 5, T
C
= 25C
t
sv
t
fi
RESISTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
20
40
60
80
100
R
e
si
st
i
ve S
w
i
t
c
h
i
n
g
T
i
m
e
-
s
01
10
10
L770CR2
t
sv
t
fi
I
B(on)
= 160 mA, V
CC
= 300 V
I
B(off)
= 160 mA, I
C
= 800 mA
BUL770
NPN SILICON POWER TRANSISTOR
5
P R O D U C T
I N F O R M A T I O N
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 9.
Figure 10.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Co
l
l
e
c
to
r Cu
rre
n
t
- A
001
01
10
10
L770CFB
T
C
= 25C
t
p
= 10 s
t
p
= 1 ms
t
p
= 10 ms
DC Operation
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
0
100
200
300
400
500
600
700
800
I
C
- Co
l
l
e
c
to
r Cu
r
r
e
n
t - A
0
2
4
6
8
L770CRB
I
B(on)
= I
C
/ 5
V
BE(off)
= -5 V
T
C
= 25C
BUL770
NPN SILICON POWER TRANSISTOR
6
P R O D U C T
I N F O R M A T I O N
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version
1,
18.0
mm.
Version
2,
17.6
mm.
MDXXBE
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