MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
TISP3072F3,TISP3082F3
LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
Device Symbol
SL Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Planar Passivated Junctions
Low Off-State Current <10
A
Rated for International Surge Wave Shapes
These low-voltage dual bidirectional thyristor protectors are
designed to protect ISDN applications against transients caused
by lightning strikes and a.c. power lines. Offered in two voltage
variants to meet battery and protection requirements, they are
guaranteed to suppress and withstand the listed international
lightning surges in both polarities. Transients are initially clipped
by breakdown clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in
ion-implanted planar structures to ensure precise and matched
breakover control and are virtually transparent to the system in
normal operation.
How To Order
D Package (Top View)
Description
.............................................. UL Recognized Component
DEVICE
V
DRM
V
V
(BO)
V
`3072F3
58
72
`3082F3
66
82
Waveshape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
80
8/20
s
IEC 61000-4-5
70
10/160
s
FCC Part 68
60
10/700
s
ITU-T K.20/21
FCC Part 68
50
10/560
s
FCC Part 68
45
10/1000
s
GR-1089-CORE
35
1
2
3
4
5
6
7
8
G
G
G
G
NC
T
R
NC
NC - No internal connection
MD1XAB
1
2
3
T
G
R
G
T
R
SD3XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
*R
oH
S
CO
M
PL
IA
NT
VE
RS
IO
NS
AV
AI
LA
BL
E
Device
Package
Carrier
TISP30xxF3
D, Small-outline
Tape And Reeled
TISP30xxF3DR
SL, Single-in-line
Tube
TISP30xxF3SL
TISP30xxF3DR-S
TISP30xxF3SL-S
Insert xx value corresponding to protection voltages of 72 and 82
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for the T and R terminals, TA = 25
C (Unless Otherwise Noted)
Absolute Maximum Ratings, TA = 25
C (Unless Otherwise Noted)
TISP30xxF3 (LV) Overvoltage Protector Series
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0 C < T
A
< 70 C
`3072F3
`3082F3
V
DRM
58
66
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
I
PPSM
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
120
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
80
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
resistor)
50
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
70
10/160 (FCC Part 68, 10/160 voltage wave shape)
60
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
55
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
38
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
50
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
50
10/560 (FCC Part 68, 10/560 voltage wave shape)
45
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
35
Non-repetitive peak on-state current, 0 C < T
A
< 70 C (see Notes 1 and 3)
50 Hz,
1 s
D Package
SL Package
I
TSM
4.3
7.1
A
Initial rate of rise of on-state current,
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
250
A/s
Junction temperature
T
J
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP
must be in thermal equilibrium with 0
C < T
J
<70
C. The surge may be repeated after the TISP
returns to its
initial conditions.
3. Above 70
C, derate linearly to zero at 150
C lead temperature.
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= 2V
DRM
, 0 C < T
A
< 70 C
10
A
I
D
Off-state current
V
D
= 50 V
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 100 mV , V
D
= 0,
Third terminal voltage = -50 V to +50 V
(see Notes 4 and 5)
D Package
SL Package
0.05
0.03
0.15
0.1
pF
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics for T and G or R and G Terminals, TA = 25
C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
, 0 C < T
A
< 70 C
10
A
V
(BO)
Breakover voltage
dv/dt = 250 V/ms, R
SOURCE
= 300
`3072F3
`3082F3
72
82
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value = 500 V
R
SOURCE
= 50
`3072F3
`3082F3
86
96
V
I
(BO)
Breakover current
dv/dt = 250 V/ms, R
SOURCE
= 300
0.1
0.6
A
V
T
On-state voltage
I
T
= 5 A, t
W
= 100 s
3
V
I
H
Holding current
I
T
= 5 A, di/dt = -/+30 mA/ms
0.15
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/s
I
D
Off-state current
V
D
= 50 V
10
A
C
off
Off-state capacitance
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= 0
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= -5 V
f = 1 MHz,
V
d
= 0.1 V r.m.s., V
D
= -50 V
(see Notes 5 and 6)
82
49
25
140
85
40
pF
NOTES: 6. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
Thermal Characteristics
TISP30xxF3 (LV) Overvoltage Protector Series
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25 C
5 cm
2
, FR4 PCB
D Package
160
C/W
SL Package
135
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter Measurement Information
TISP30xxF3 (LV) Overvoltage Protector Series
Figure 1. Voltage-Current Characteristics for any Terminal Pair
-v
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
I
(BR)
V
(BR)
V
(BR)M
V
DRM
I
DRM
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PMXXAA
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G or T and G Terminals
TISP30xxF3 (LV) Overvoltage Protector Series
Figure 2.
Figure 3.
Figure 4.
Figure 5.
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
I
D
- O
f
f
-
S
t
at
e
Current -
A
0001
001
01
1
10
100
TC3LAF
V
D
= -50 V
V
D
= 50 V
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
Norma
l
i
zed Br
e
akdo
w
n V
o
l
t
ages
0.9
1.0
1.1
1.2
TC3LAI
V
(BO)
V
(BR)
V
(BR)M
Positive Polarity
Normalized to V
(BR)
I
(BR)
= 100
A and 25
C
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
Normal
i
z
ed Breakdow
n V
o
l
t
ages
0.9
1.0
1.1
1.2
TC3LAJ
V
(BO)
V
(BR)
V
(BR)M
Negative Polarity
Normalized to V
(BR)
I
(BR)
= 100
A and 25
C
V
T
- On-State Voltage - V
2
3
4
5
6
7 8 9
1
1
0
I
T
- On-S
ta
t
e
Cur
r
e
nt -
A
1
10
100
TC3LAL
-40
C
150
C
25
C
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
Figure 6.
Figure 7.
Figure 8.
Figure 9.
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
I
H
, I
(BO
)
- Hol
d
i
n
g Cur
r
ent,
B
r
ea
kov
er
Current
-
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1.0
TC3LAH
I
(BO)
I
H
di/dt - Rate of Rise of Principle Current - A/
s
0001
001
01
1
10
100
N
o
rm
al
i
z
e
d
Brea
kov
er Vol
t
age
1.0
1.1
1.2
1.3
TC3LAB
Positive
Negative
Terminal Voltage - V
01
1
10
Off-
S
t
at
e Capaci
tance
- pF
10
100
TC3LAE
50
Positive Bias
Negative Bias
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
O
f
f
-
S
t
at
e Cap
acit
a
n
ce
-
p
F
10
100
TC3LAD
500
Terminal Bias = 0
Terminal Bias = 50 V
Terminal Bias = -50 V
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics - R and G or T and G Terminals
Figure 10.
Decay Time -
s
10
100
1000
M
axi
mum
S
u
rge Current -
A
10
100
1000
TC3LAA
2
SURGE CURRENT
vs
DECAY TIME
TISP30xxF3 (LV) Overvoltage Protector Series
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP30xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
Figure 11.
Figure 12.
Figure 13.
Figure 14.
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
I
D
- O
f
f
-
S
t
at
e
Current -
A
0001
001
01
1
10
100
TC3LAG
V
D
=
50 V
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
Norma
l
i
zed Br
e
akdo
w
n V
o
l
t
ages
0.9
1.0
1.1
1.2
TC3LAK
V
(BO)
V
(BR)
V
(BR)M
Both Polarities
Normalized to V
(BR)
I
(BR)
= 100
A and 25
C
di/dt - Rate of Rise of Principle Current - A/
s
0001
001
01
1
10
100
Normal
i
zed Breakov
er V
o
l
t
age
1.0
1.1
1.2
1.3
TC3LAC
Terminal Voltage - V
01
1
10
O
ff-
St
a
t
e
Ca
pa
c
i
ta
nc
e
-
f
F
20
30
40
50
60
70
80
90
10
100
TC3XAA
50
D Package
SL Package
Both Voltage Polarities
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
RATE OF RISE OF PRINCIPAL CURRENT
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Thermal Information
TISP30xxF3 (LV) Overvoltage Protector Series
Figure 15.
Figure 16.
t - Current Duration - s
01
1
10
100
1000
I
TR
M
S
-
M
a
xi
m
u
m
Non
-
Recur
rent 50 Hz Cur
rent -
A
1
10
D Package
SL Package
TI3LAA
V
GEN
= 250 Vrms
R
GEN
= 10 to 150
t - Power Pulse Duration - s
00001 0001
001
01
1
10
100
1000
Z
JA
-
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
Im
pe
da
n
c
e
-
C/W
1
10
100
D Package
SL Package
TI3MAA
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs
CURRENT DURATION
THERMAL RESPONSE
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
The electrical characteristics of a TISP device are strongly dependent on junction temperature, TJ. Hence, a characteristic value will depend
on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which
generally minimize the temperature rise caused by testing. Application values may be calculated from the parameters' temperature coefficient,
the power dissipated and the thermal response curve, Z
(see M. J. Maytum, "Transient Suppressor Dynamic Parameters." TI Technical
Journal, vol. 6, No. 4, pp.63-70, July-August 1989).
Electrical Characteristics
Lightning Surge
Wave Shape Notation
Generators
Current Rating
APPLICATIONS INFORMATION
TISP30xxF3 (LV) Overvoltage Protector Series
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the
maximum amplitude. The notation used for the wave shape is
amplitude, rise time/decay time
. A 50 A, 5/310
s wave shape would have a
peak current value of 50 A, a rise time of 5
s and a decay time of 310
s. The TISP device surge current graph comprehends the wave
shapes of commonly used surges.
There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g., 10/1000
s open circuit voltage
and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit
current (e.g., 1.2/50
s open circuit voltage and 8/20
s short circuit current). Circuit specified generators usually equate to a combination
generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700
s open circuit voltage generator typically
produces a 5/310
s short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape
produced is intermediate between the open circuit and short circuit values.
When the TISP deviceswitches into the on-state, it has a very low impedance. As a result, although the surge wave shape may be defined in
terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP surge capability. As an example, the
ITU-T K.21 1.5 kV, 10/700
s open circuit voltage surge is changed to a 38 A, 5/310
s current waveshape when driving into a short circuit.
Thus, the TISP surge current capability, when directly connected to the generator, will be found for the ITU-T K.21 waveform at 310
s on the
surge graph and not 700
s. Some common short circuit equivalents are tabulated below:
Standard
Open Circuit Voltage Short Circuit Current
ITU-T K.21
1.5 kV, 10/700 s
37.5 A, 5/310 s
ITU-T K.20
1 kV, 10/700 s
25 A, 5/310 s
IEC 61000-4-5, combination wave generator
1.0 kV, 1.2/50 s
500 A, 8/20 s
Telcordia GR-1089-CORE
1.0 kV, 10/1000 s
100 A, 10/1000 s
Telcordia GR-1089-CORE
2.5 kV, 2/10 s
500 A, 2/10 s
FCC Part 68, Type A
1.5 kV, <10/>160 s
200 A,<10/>160 s
FCC Part 68, Type A
800 V, <10/>560 s
100 A,<10/>160 s
FCC Part 68, Type B
1.5 kV, 9/720 s
37.5 A, 5/320 s
Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators' short circuit value. A 1 kV
open circuit voltage, 100 A short circuit current generator has an effective output impedance of 10
(1000/100). If the equipment has a series
resistance of 25
, then the surge current requirement of the TISP device becomes 29 A (1000/35) and not 100 A.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
rate of current rise, di/dt, when the TISP device is clamping the voltage in its breakdown region. The V(BO) value under surge conditions can
be estimated by multiplying the 50 Hz rate V(BO) (250 V/ms) value by the normalized increase at the surge's di/dt (Figure 7). An estimate of the
di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the ITU-T K.21 1.5 kV, 10/700
s surge has an average dv/dt of 150 V/
s, but, as the rise is exponential, the initial dv/dt is
higher, being in the region of 450 V/
s. The instantaneous generator output resistance is 25
. If the equipment has an additional series
resistance of 20
, the total series resistance becomes 45
. The maximum di/dt then can be estimated as 450/45 = 10 A/
s. In practice, the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP breakdown
region.
Capacitance
Off-state Capacitance
Protection Voltage
TISP30xxF3 (LV) Overvoltage Protector Series
The off-state capacitance of a TISP device is sensitive to junction temperature, TJ, and the bias voltage, comprising of the d.c. voltage, VD,
and the a.c. voltage, Vd. All the capacitance values in this data sheet are measured with an a.c. voltage of 100 mV. The typical 25
C variation
of capacitance value with a.c. bias is shown in Figure 17. When VD >> Vd, the capacitance value is independent on the value of Vd. The
capacitance is essentially constant over the range of normal telecommunication frequencies.
APPLICATIONS INFORMATION
Figure 17.
V
d
- RMS AC Test Voltage - mV
1
10
100
1000
Normal
i
z
ed Capaci
tance
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
AIXXAA
Normalized to V
d
= 100 mV
DC Bias, V
D
= 0
NORMALIZED CAPACITANCE
vs
RMS AC TEST VOLTAGE
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Figure 18 shows a three terminal TISP
device with its equivalent "delta" capacitance. Each capacitance, CTG, CRG and CTR, is the true
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then CTG >CRG. Capacitance CTG is equivalent to a capacitance of CRG in parallel with the capacitive difference of (CTG -CRG). The line
capacitive unbalance is due to (CTG -CRG) and the capacitance shunting the line is CTR +CRG/2.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
APPLICATIONS INFORMATION
TISP30xxF3 (LV) Overvoltage Protector Series
Longitudinal Balance
Figure 18.
C
TG
C
RG
C
TR
Equipment
T
R
G
(C
TG
-C
RG
)
C
RG
C
TR
Equipment
T
R
G
C
RG
C
TG
> C
RG
Equivalent Unbalance
AIXXAB
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
"Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
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