Specifications are subject to change without notice.
96
JANUARY 1999 - REVISED OCTOBER 2000
TISP3070H3SL THRU TISP3115H3SL,
TISP3125H3SL THRU TISP3210H3SL,
TISP3250H3SL THRU TISP3350H3SL
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP3xxxH3SL Overview
TISP3xxxH3SL Overvoltage Protector Series
Summary Electrical Characteristics
This TISP
device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP3xxxH3SL protects R-G and T-G. In addition, the device is rated for simultaneous R-G and T-G impulse conditions. The TISP3xxxH3SL is
available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These protectors have
been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T
K.20, K.21 and K.45. The TISP3350H3SL meets the FCC Part 68 "B" ringer voltage requirement and survives both Type A and B impulse tests.
These devices are housed in a through-hole 3-pin single-in-line (SL) plastic package.
Part #
V
DRM
V
V
(BO)
V
V
T
@ I
T
V
I
DRM
A
I
(BO)
mA
I
T
A
I
H
mA
C
o
@ -2 V
pF
Functionally
Replaces
TISP3070H3
58
70
3
5
600
5
150
140
P1402AC
TISP3080H3
65
80
3
5
600
5
150
140
P1602AC
TISP3095H3
75
95
3
5
600
5
150
140
TISP3115H3
90
115
3
5
600
5
150
74
P2202AC
TISP3125H3
100
125
3
5
600
5
150
74
TISP3135H3
110
135
3
5
600
5
150
74
TISP3145H3
120
145
3
5
600
5
150
74
P2702AC
TISP3180H3
145
180
3
5
600
5
150
74
P3002AC
TISP3210H3
160
210
3
5
600
5
150
74
P3602AC
TISP3250H3
190
250
3
5
600
5
150
62
P4202AC
TISP3290H3
220
290
3
5
600
5
150
62
P4802AC
TISP3350H3
275
350
3
5
600
5
150
62
P6002AC
Bourns part has an improved protection voltage
Summary Current Ratings
Parameter
I
TSP
A
I
TSM
A
di/dt
A/
s
Waveshape
2/10
1.2/50, 8/20
10/160
5/320
10/560
10/1000
1 cycle 60 Hz
2/10 Wavefront
Value
500
300
250
200
130
100
60
400
Specifications are subject to change without notice.
97
JANUARY 1999 - REVISED OCTOBER 2000
Device
V
DRM
V
V
(BO)
V
`3070
58
70
`3080
65
80
`3095
75
95
`3115
90
115
`3125
100
125
`3135
110
135
`3145
120
145
`3180
145
180
`3210
160
210
`3250
190
250
`3290
220
290
`3350
275
350
ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
1
2
3
T
G
R
MDXXAGA
How To Order
Device
Package
Carrier
Order As
TISP3xxxH3
SL (Single-in-Line)
Tube
TISP3xxxH3SL
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
Description
Device Symbol
SL Package (Top View)
TISP3xxxH3SL Overvoltage Protector Series
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping
until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as
the diverted current subsides.
This TISP3xxxH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in
a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in
SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000 TISP3xxxF3SL series is
available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover
control and are virtually transparent to the system in normal operation.
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height ................................................................... 8.3mm
Low Differential Capacitance ...................................... < 67 pF
.............................................. UL Recognized Component
G
T
R
SD3XAA
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Waveshape
Standard
I
TSP
A
2/10
s
GR-1089-CORE
500
8/20
s
IEC 61000-4-5
300
10/160
s
FCC Part 68
250
10/700
s
FCC Part 68
ITU-T K.20/21
200
10/560
s
FCC Part 68
160
10/1000
s
GR-1089-CORE
100
Specifications are subject to change without notice.
98
JANUARY 1999 - REVISED OCTOBER 2000
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, (see Note 1)
`3070
`3080
`3095
`3115
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
V
DRM
58
65
75
90
100
110
120
145
160
190
220
275
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10
s (GR-1089-CORE, 2/10 s voltage wave shape)
500
8/20
s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator)
300
10/160
s (FCC Part 68, 10/160 s voltage wave shape)
250
5/200
s (VDE 0433, 10/700 s voltage wave shape)
220
0.2/310
s (I3124, 0.5/700 s voltage wave shape)
200
5/310
s (ITU-T K.20/21, 10/700 s voltage wave shape)
200
5/310
s (FTZ R12, 10/700 s voltage wave shape)
200
5/320
s (FCC Part 68, 9/720 s voltage wave shape)
200
10/560
s (FCC Part 68, 10/560 s voltage wave shape)
160
10/1000
s (GR-1089-CORE, 10/1000 s voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
di
T
/dt
400
A/
s
Junction temperature
T
J
-40 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T
terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G
terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the
TISP3xxxH3SL returns to its initial conditions.
4. See Figure 10 for impulse current ratings at other temperatures. Above 85
C, derate linearly to zero at 150 C lead
temperature.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for
simultaneous operation. In this condition, the G terminal current will be 2xI
TSM(t)
, the sum of the R and T terminal currents. Derate
current values at -0.61 %/
C for ambient temperatures above 25 C.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
TISP3xxxH3SL Overvoltage Protector Series
Specifications are subject to change without notice.
99
JANUARY 1999 - REVISED OCTOBER 2000
Electrical Characteristics for the R and G or T and G Terminals, TA = 25 C (Unless Otherwise Noted)
TISP3xxxH3SL Overvoltage Protector Series
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25
C
T
A
= 85
C
5
10
A
V
(BO)
Breakover voltage
dv/dt =
750 V/ms, R
SOURCE
= 300
`3070
`3080
`3095
`3115
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
70
80
95
115
125
135
145
180
210
250
290
350
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/s, Linear current ramp,
Maximum ramp value =
10 A
`3070
`3080
`3095
`3115
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
78
88
103
124
134
144
154
189
220
261
302
362
V
I
(BO)
Breakover current
dv/dt =
750 V/ms, R
SOURCE
= 300
0.15
0.6
A
V
T
On-state voltage
I
T
=
5 A, t
W
= 100
s
3
V
I
H
Holding current
I
T
=
5 A, di/dt = - /+30 mA/ms
0.15
0.6
A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
5
kV/
s
I
D
Off-state current
V
D
=
50 V
T
A
= 85
C
10
A
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V rms, V
D
= 0,
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
f = 100 kHz,
V
d
= 1 V rms, V
D
= -100 V
(see Note 6)
`3070 thru `3115
`3125 thru `3210
`3250 thru `3350
`3070 thru `3115
`3125 thru `3210
`3250 thru `3350
`3070 thru `3115
`3125 thru `3210
`3250 thru `3350
`3070 thru `3115
`3125 thru `3210
`3250 thru `3350
`3125 thru `3210
`3250 thru `3350
170
90
84
150
79
67
140
74
62
73
35
28
33
26
pF
NOTE
6: To avoid possible voltage clipping, the `3125 is tested with V
D
= -98 V.
Specifications are subject to change without notice.
100
JANUARY 1999 - REVISED OCTOBER 2000
Electrical Characteristics for the R and T Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
DRM
Repetitive peak off-
state current
V
D
= 2V
DRM
5
A
V
(BO)
Breakover voltage
dv/dt =
750 V/ms, R
SOURCE
= 300
`3070
`3080
`3095
`3115
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
140
160
190
230
250
270
290
360
420
500
580
700
V
V
(BO)
Impulse breakover
voltage
dv/dt
1000 V/s, Linear voltage ramp,
Maximum ramp value =
500 V
di/dt =
20 A/s, Linear current ramp,
Maximum ramp value =
10 A
`3070
`3080
`3095
`3115
`3125
`3135
`3145
`3180
`3210
`3250
`3290
`3350
156
176
206
248
268
288
308
378
440
252
604
724
V
Thermal Characteristics
TISP3xxxH3SL Overvoltage Protector Series
Parameter
Test Conditions
Min
Typ
Max
Unit
R
JA
Junction to free air thermal resistance
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
C, (see Note 7)
50
C/W
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Specifications are subject to change without notice.
101
JANUARY 1999 - REVISED OCTOBER 2000
Parameter Measurement Information
TISP3xxxH3SL Overvoltage Protector Series
Figure 1. Voltage- current Characteristic for Terminal Pairs
-v
V
DRM
I
DRM
V
D
I
H
I
T
V
T
I
TSM
I
TSP
V
(BO)
I
(BO)
I
D
Quadrant I
Switching
Characteristic
+v
+i
V
(BO)
I
(BO)
V
D
I
D
I
H
I
T
V
T
I
TSM
I
TSP
-i
Quadrant III
Switching
Characteristic
PM4XAAC
V
DRM
I
DRM
V
D
=
50 V and I
D
=
10 A
used for reliability release
Specifications are subject to change without notice.
102
JANUARY 1999 - REVISED OCTOBER 2000
Typical Characteristics
TISP3xxxH3SL Overvoltage Protector Series
.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
|I
D
|
- Off
-S
tate
Cu
rrent -
A
0001
001
01
1
10
100
TCHAG
V
D
=
50 V
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
Nor
m
a
l
i
ze
d
Br
e
akover
V
o
l
t
age
0.95
1.00
1.05
1.10
TC4HAF
V
T
- On-State Voltage - V
0.7
1.5
2
3
4
5
7
1
10
I
T
- On-S
tate
Cu
rrent
- A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
T
A
= 25
C
t
W
= 100
s
'3250
THRU
'3350
'3125
THRU
'3210
'3070
THRU
'3115
TC7AJ
T
J
- Junction Temperature -
C
-25
0
25
50
75
100
125
150
Nor
m
a
l
i
z
e
d
Ho
l
d
i
n
g
Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4HAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
NORMALIZED HOLDING CURENT
vs
JUNCTION TEMPERATURE
Specifications are subject to change without notice.
103
JANUARY 1999 - REVISED OCTOBER 2000
Typical Characteristics
TISP3xxxH3SL Overvoltage Protector Series
Figure 6.
Figure 7.
V
D
- Off-state Voltage - V
0.5
1
2
3
5
10
20 30
50
100 150
Capaci
t
a
nce N
o
rmal
i
zed t
o
V
D
= 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T
J
= 25
C
V
d
= 1 Vrms
'3125 THRU '3210
'3250 THRU '3350
'3070 THRU '3115
TC7HAK
V
DRM
- Repetitive Peak Off-State Voltage - V
50
60
70 80 90
150
200
250 300
100
C - Di
ff
erenti
al
Off
-
S
t
at
e Cap
aci
t
a
n
ce -
p
F
30
35
40
45
50
55
60
65
70
75
DC = C
off(-2 V)
- C
off(-50 V)
'3070
'3080
'3095
'
3125
'
3135
'
3145
'
3180
'3250
'3290
'3350
'
3210
'3115
TC
7
X
A
N
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
Specifications are subject to change without notice.
104
JANUARY 1999 - REVISED OCTOBER 2000
Typical Characteristics
TISP3xxxH3SL Overvoltage Protector Series
.
Figure 8.
Figure 9.
Figure 10.
t - Current Duration - s
01
1
10
100
1000
I
TS
M
(
t
)
-
N
on-
R
e
pet
i
t
i
ve P
eak O
n
-
S
t
a
t
e
C
u
rr
ent
-
A
1.5
2
3
4
5
6
7
8
9
15
20
1
10
TI4HACA
V
GEN
= 600 V rms, 50/60 Hz
R
GEN
= 1.4*V
GEN
/I
TSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB, T
A
= 25
C
SIMULTANEOUS OPERATION
OF R AND T TERMINALS. G
TERMINAL CURRENT = 2xI
TSM(t)
T
AMIN
- Minimum Ambient Temperature -
C
-35
-25
-15
-5
5
15
25
-40
-30
-20
-10
0
10
20
Derati
ng F
act
o
r
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00
'3250 THRU '3350
'3125 THRU '3210
'3070 THRU '3115
TC7HAM
T
A
- Ambient Temperature -
C
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
Impulse C
u
rrent
-
A
90
100
120
150
200
250
300
400
500
600
700
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4HAA
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
IMPULSE RATING
vs
AMBIENT TEMPERATURE
VDRM DERATING FACTOR
vs
MINIMUM AMBIIENT TEMPERATURE
Specifications are subject to change without notice.
105
JANUARY 1999 - REVISED OCTOBER 2000
Standard
Peak Voltage
Setting
V
Voltage
Waveform
s
Peak Current
Value
A
Current
Waveform
s
TISP3xxxH3
25
C Rating
A
Series
Resistance
GR-1089-CORE
2500
2/10
500
2/10
500
0
1000
10/1000
100
10/1000
100
FCC Part 68
(March 1998)
1500
10/160
200
10/160
250
0
800
10/560
100
10/560
160
0
1500
9/720
37.5
5/320
200
0
1000
9/720
25
5/320
200
0
I3124
1500
0.5/700
37.5
0.2/310
200
0
ITU-T K.20/K.21
1500
4000
10/700
37.5
100
5/310
200
0
FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator
Impulse Testing
TISP3xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
AC Power Testing
Capacitance
Normal System Voltage Levels
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table below shows some common values.
If the impulse generator current exceeds the protector's current rating, then a series resistance can be used to reduce the current to the
protector's rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator's peak voltage by the protector's rated
current. The impulse generator's fictitious impedance (generator's peak voltage divided by peak short circuit current) is then subtracted from
the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over
a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient
temperatures in the range of -40
C to 85 C.
The protector can withstand the G return currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times
must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are
overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to
one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The
current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases, there may be a further
time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V, and -50 V. Where possible,
values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in
Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows
the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the
ring trip circuit. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not
be less than the maximum normal system voltages. The TISP3290H3, with a VDRM of 220 V, can be used for the protection of ring generators
producing 105 V rms of ring on a battery voltage of -58 V. The peak ring voltage will be 58 + 1.414*105 = 206.5 V. However, this is the open
circuit voltage and the connection of the line and its equipment will reduce the peak voltage.
Specifications are subject to change without notice.
106
JANUARY 1999 - REVISED OCTOBER 2000
Normal System Voltage Levels (continued)
TISP3xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
For the extreme case of an unconnected line, the temperature at which clipping begins can be calculated using the data from Figure 9. To
possibly clip, the VDRM value has to be 206.5 V. This is a reduction of the 220 V 25 C VDRM value by a factor of 206.5/220 = 0.94. Figure 9
shows that a 0.94 reduction will occur at an ambient temperature of -32
C. In this example, the TISP3290H3 will allow normal equipment
operation, even on an open-circuit line, provided that the minimum expected ambient temperature does not fall below -32
C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ") on a side and the other for packages up to 48 mm (1.89 "). The thermal measurements used the smaller
76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance)
and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so
can dissipate higher power levels than indicated by the JESD51 values.
Specifications are subject to change without notice.
107
JANUARY 1999 - REVISED OCTOBER 2000
MECHANICAL DATA
TISP3xxxH3SL Overvoltage Protector Series
SL003 3-pin Plastic Single-in-line Package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SL003
2
1
3
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position.
B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane.
MDXXCE
Index
Notch
9.25 - 9.75
(0.364 - 0.384)
3.20 - 3.40
(0.126 - 0.134)
6.10 - 6.60
(0.240- 0.260)
0.203 - 0.356
(0.008- 0.014)
0.559 - 0.711
(0.022 - 0.028)
3 Places
12.9
(0.492)
DIMENSIONS ARE:
METRIC
(INCHES)
4.267
(0.168)
MIN.
MAX.
1.854
(0.073)
MAX.
8.31
(0.327)
MAX.
2.54
(0.100)
Typical
(See Note A)
2 Places
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