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Электронный компонент: TISP8210MDR-S

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*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
TISP8210MD BUFFERED P-GATE SCR DUAL
TISP8211MD BUFFERED N-GATE SCR DUAL
COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP8210MD 8-SOIC Package (Top View)
*RoHS COMPLIANT
High Performance Protection for SLICs with +ve & -ve
Battery Supplies
TISP8210MD Negative Overvoltage Protector
Wide 0 to -110 V Programming Range
Low +5 mA Max. Gate Triggering Current
High -150 mA Min. Holding Current
TISP8211MD Positive Overvoltage Protector
Wide 0 to +110 V Programming Range
Low -5 mA Max. Gate Triggering Current
+20 mA Min. Holding Current
Rated for International Surge Wave Shapes
Wave Shape
Standard
I
PPSM
A
2/10
GR-1089-CORE
167
10/700
ITU-T K.20/21/45
70
10/1000
GR-1089-CORE
60
1
2
3
4
5
6
7
8
MDRXAKC
NC - No internal connection
G2
A
A
G1
K1
K2
NC
NC
TISP8210MD Device Symbol
SDRXAJB
A
A
G1
G2
K1
K2
Circuit Application Diagram
TISP8211MD 8-SOIC Package (Top View)
1
2
3
4
5
6
7
8
MDRXALC
NC - No internal connection
G2
K
K
G1
A1
A2
NC
NC
TISP8211MD Device Symbol
SDRXAKB
A1
A2
K
K
G1
G2
- V
BAT
SLIC
PROTECTION
TISP8211MD
AI-TISP8-003-a
Tip
Ring
C2
100 nF
+V
BAT
C1
100 nF
TISP8210MD
background image
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Description
The TISP8210MD / TISP8211MD protector combination has been designed to protect dual polarity supply rail SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been
designed using the latest understanding of programmable protector technology to maximize performance.
The TISP8210MD and TISP8211MD are complementary programmable protection devices. The program or gate pins (G1, G2) are connected to
the positive and negative SLIC battery supplies to give protection which will track the SLIC supply levels. The integrated transistor buffer is an
essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or
power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary
loading of the power supply.
The TISP8210MD / TISP8211MD combination is designed to be used in conjunction with the 12.5 Bourns
4A12P-1AH-12R5 Line
Protection Module (LPM). With this solution the application should pass Telcordia GR-1089-CORE testing with the 4A12P-1AH-12R5 acting as
the overcurrent protector and coordination element.
The TISP
device plus LPM solution is designed to work in harmony with the system primary protectors. GR-1089-CORE issue 3 lists test to
allow for three types of primary protection: Carbon Block (1000 V); Gas Discharge Tube (600 V) and Solid State (400 V). This solution is
designed to be used with the GDT and Solid State options. Under lightning conditions the current through the 12.5 LPM will be 48 A (600 V /
12.5 ), which is well within the 60 A capability of the TISP8210MD / TISP8211MD combination.
How to Order
Device
Package
Carrier
For Lead-Free
Termination Finish
Order As
Marking Code
Standard Quantity
TISP8210MD
8-SOIC
Embossed Tape Reeled
TISP8210MDR-S
8210M
2500
M
1
1
2
8
S
-
R
D
M
1
1
2
8
P
S
I
T
D
M
1
1
2
8
P
S
I
T
t
i
n
U
e
u
l
a
V
l
o
b
m
y
S
g
n
i
t
a
R
Repetitive peak off-state voltage, V
GK
V
0
=
DRM
-120
V
Repetitive peak reverse voltage, V
GA
V
V
0
7
-
=
RRM
120
Non-repetitive peak impulse current (see Note 1)
2/10
s (Telcordia GR-1089-CORE, 2/10
s voltage wave shape)
5/310
s (ITU-T K.44, 10/700 s voltage wave shape used in K.20/21/45)
10/1000
s (Telcordia GR-1089-CORE, 10/1000
s voltage wave shape)
I
PPSM
-167
-70
-60
A
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2)
100 ms
1 s
5 s
300 s
900 s
I
TSM
-11
-6.5
-3.4
-1.4
-1.3
A
Junction temperature
T
J
-55 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 1. Initially the protector must be in thermal equilibrium with T
J
= 25
C. The surge may be repeated after the device returns to its initial
conditions.
2. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive
current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
TISP8210MD Absolute Maximum Ratings, T
A
= 25 C
background image
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
TISP8211MD Absolute Maximum Ratings, T
A
= 25 C
t
i
n
U
e
u
l
a
V
l
o
b
m
y
S
g
n
i
t
a
R
Repetitive peak off-state voltage, V
GA
V
0
=
DRM
120
V
Repetitive peak reverse voltage, V
GK
V
V
0
7
=
RRM
-120
Non-repetitive peak impulse current (see Note 3)
2/10
s (Telcordia GR-1089-CORE, 2/10
s voltage wave shape)
5/310
s (ITU-T K.44, 10/700 s voltage wave shape used in K.20/21/45)
10/1000
s (Telcordia GR-1089-CORE, 10/1000
s voltage wave shape)
I
PPSM
167
70
60
A
Non-repetitive peak on-state current, 50/60 Hz (see Notes 3 and 4)
100 ms
1 s
5 s
300 s
900 s
I
TSM
11
6.5
3.4
1.4
1.3
A
Junction temperature
T
J
-55 to +150
C
Storage temperature range
T
stg
-65 to +150
C
NOTES: 3. Initially the protector must be in thermal equilibrium with T
J
= 25
C. The surge may be repeated after the device returns to its initial
conditions.
4. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive
current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
t
i
n
U
x
a
M
p
y
T
n
i
M
3
e
r
u
g
i
F
e
e
S
F
n
0
2
2
0
0
1
r
o
t
i
c
a
p
a
c
g
n
il
p
u
o
c
e
d
e
t
a
G
2
C
,
1
C
5
.
2
1
0
1
E
R
O
C
-
9
8
0
1
-
R
G
a
i
d
r
o
c
l
e
T
r
o
f
e
c
n
a
t
s
i
s
e
r
s
e
i
r
e
S
2
R
,
1
R
t
i
d
n
o
C
t
s
e
T
r
e
t
e
m
a
r
a
P
t
i
n
U
x
a
M
p
y
T
n
i
M
s
n
o
i
I
DRM
Repetitive peak off-state current
V
D
= V
DRM
, V
GK
A
5
-
0
=
I
RRM
Repetitive peak reverse current
V
R
= V
RRM
, V
GA
A
5
V
0
7
-
=
V
(BO)
Breakover voltage
dv/dt = -250 V/ms, R
SOURCE
= 300
, V
GA
V
2
8
-
V
0
8
-
=
I
H
Holding current
(I
K
) I
T
= -1 A, di/dt = 1 A/ms, V
GA
A
m
0
5
1
-
V
0
8
-
=
I
GT
Gate trigger current
(I
K
) I
T
= -5 A, t
p(g)
20
s, V
GA
A
m
5
V
0
8
-
=
C
O
Off-state capacitance
f = 1 MHz, V
d
= 1 V, V
D
F
p
0
4
V
2
=
t
i
d
n
o
C
t
s
e
T
r
e
t
e
m
a
r
a
P
t
i
n
U
x
a
M
p
y
T
n
i
M
s
n
o
i
I
DRM
Repetitive peak off-state current
V
D
= V
DRM
, V
GA
A
5
0
=
I
RRM
Repetitive peak reverse current
V
R
= V
RRM
, V
GK
A
5
-
V
0
7
=
V
(BO)
Breakover voltage
dv/dt = 250 V/ms, R
SOURCE
= 300
, V
GK
V
2
8
V
0
8
=
I
H
Holding current
(I
A
) I
T
= 1 A, di/dt = -1 A/ms, V
GK
A
m
0
2
V
0
8
=
I
GT
Gate trigger current
(I
A
) I
T
= 5 A, t
p(g)
20 s, V
GK
A
m
5
-
V
0
8
=
C
O
Off-state capacitance
f = 1 MHz, V
d
= 1 V, V
D
F
p
0
3
V
2
=
t
i
d
n
o
C
t
s
e
T
r
e
t
e
m
a
r
a
P
t
i
n
U
x
a
M
p
y
T
n
i
M
s
n
o
i
R
JA
Junction to ambient thermal resistance
P
tot
= 0.52 W, T
A
= 70
C, 5 cm
2
W
/
C
0
6
1
B
C
P
4
R
F
,
Recommended Operating Conditions
TISP8210MD Electrical Characteristics, TA = 25 C
Thermal Characteristics
TISP8211MD Electrical Characteristics, TA = 25 C
background image
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Parameter Measurement Information
Figure 2. TISP8211MD AK Terminal Characteristic
Figure 1. TISP8210MD KA Terminal Characteristic
Quadrant I
Blocking
Characteristic
Quadrant III
Switching
Characteristic
+v
-v
V
GA
V
D
I
H
I
TSM
I
PPSM
V
(BO)
I
D
+i
-i
V
GK(BO)
V
RRM
V
R
I
R
I
RRM
PM8XACBa
-v
V
GK
V
D
V
(BO)
I
H
I
TSM
I
PPSM
I
D
Quadrant III
Blocking
Characteristic
+i
-i
Quadrant I
Switching
Characteristic
V
GA(BO)
V
RRM
V
R
I
R
I
RRM
+v
PM8XABBa
background image
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Applications Information
Figure 3. Typical Application Circuit
AI-TISP8-004-a
Overcurrent Protection
Telcordia
GR-1089-CORE Issue 3
compliant LPM
(Bourns 4A12P-1AH-12R5)
C1
100 nF
SLIC
V
BATH
C2
100 nF
0 V
0 V
TISP8211MD
RING
TIP
TISP8210MD
Primary Protection
background image
JANUARY 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
"Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
COPYRIGHT 2006, BOURNS, INC. LITHO IN U.S.A. e 03/06 TSP0610
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Technical Assistance
Region Phone Fax
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+1-951-781-5700
Europe: +41-41-7685555
+41-41-7685510
Asia-Pacific: +886-2-25624117
+886-2-25624116
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Bourns
products are available through an extensive network of manufacturer's representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.