Revision 2.1
Jan.

2004

R0201-BS616LV8016

Very Low Power/Voltage CMOS SRAM
512K X 16 bit

(Dual CE Pins)

The BS616LV8016 is a high performance, very low power CMOS Static
Random Access Memory organized as 524,288 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of

1.5uA

at 3V/25

C and maximum access time of 55ns at 3.0V/85

Easy memory expansion is provided by an active LOW chip enable(CE1)
, active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616LV8016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV8016 is available in 48-pin BGA package.

DESCRIPTION

FEATURES

BLOCK DIAGRAM

PRODUCT FAMILY

PIN CONFIGURATIONS

Brilliance Semiconductor, Inc

. reserves the right to modify document contents without notice.

BS616LV8016

CE2

CE1

D10

VSS

D11

A17

VCC

D12

A16

VSS

D14

D13

A14

A15

D15

A12

A13

A 8

A10

A11

VSS

· Wide Vcc operation voltage : 2.4~5.5V
· Very low power consumption :

Vcc = 3.0V C-grade: 30mA (@55ns) operating current

I -grade: 31mA (@55ns) operating current

C-grade: 24mA (@70ns) operating current

I -grade: 25mA (@70ns) operating current

1.5uA (Typ.)

CMOS standby current

Vcc = 5.0V C-grade: 75mA (@55ns) operating current

I -grade: 76mA (@55ns) operating current

C-grade: 60mA (@70ns) operating current

I -grade: 61mA (@70ns) operating current

8.0uA (Typ.)

CMOS standby current

· High speed access time :

-55
-70

· Automatic power down when chip is deselected
· Three state outputs and TTL compatible

POWER DISSIPATION

SPEED

(ns)

STANDBY

CCSB1

, Max)

Operating

, Max)

PRODUCT FAMILY

OPERATING

TEMPERATURE

Vcc

RANGE

Vcc=3V

Vcc=5V

PKG TYPE

BS616LV8016FC

C to +70

2.4V ~ 5.5V

55 / 70

5uA

55uA

24mA

60mA

BGA-48-0912

BS616LV8016FI

-40

C to +85

2.4V ~ 5.5V

55 / 70

10uA

110uA

25mA

61mA

BGA-48-0912

Row

Decoder

Memory Array

2048 x 4096

Column I/O

Write Driver

Sense Amp

Column Decoder

Data

Buffer

Output

A9 A8 A7

Data

Buffer

Input

Control

Vss

Vcc

CE1

D15

A13

A14

A15

256

4096

2048

A17
A16

A10

A12

A11

Address

Input

Buffer

Address Input Buffer

.
.
.
.

A18

CE2

48-Ball CSP top View

BSI

· Fully static operation
· Data retention supply voltage as low as 1.5V
· Easy expansion with CE2,CE1 and OE options
· I/O Configuration x8/x16 selectable by LB and UB pin

55ns : 3.0~5.5V
70ns : 2.7~5.5V

Vcc=3V

Vcc=5V

70ns

Revision 2.1
Jan.

2004

R0201-BS616LV8016

Name

Function

A0-A18 Address Input

These 19 address inputs select one of the 524,288 x 16-bit words in the RAM.

CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input

CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.

WE Write Enable Input

The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.

OE Output Enable Input

The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.

LB and UB Data Byte Control Input

Lower byte and upper byte data input/output control pins.

D0 - D15 Data Input/Output Ports

These 16 bi-directional ports are used to read data from or write data into the RAM.

Vcc

Power Supply

Vss

Ground

TRUTH TABLE

PIN DESCRIPTIONS

BSI

BS616LV8016

MODE

CE1

CE2

D0~D7

D8~D15

Vcc CURRENT

High Z

CCSB

, I

CCSB1

Not selected

(Power Down)

High Z

CCSB

, I

CCSB1

Output Disabled

High Z

Dout

High Z

Dout

Read

Dout

High Z

Din

Write

Din

Input
Capacitance

=0V

Input/Output
Capacitance

I/O

=0V

RANGE

AMBIENT

TEMPERATURE

Vcc

Commercial

C to +70

2.4V ~ 5.5V

Industrial

-40

C to +85

2.4V ~ 5.5V

ABSOLUTE MAXIMUM RATINGS

(1)

OPERATING RANGE

CAPACITANCE

(1)

(TA = 25

C, f = 1.0 MHz)

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.

1. This parameter is guaranteed and not 100% tested.

SYMBOL

PARAMETER

RATING

UNITS

TERM

Terminal Voltage with
Respect to GND

-0.5 to

Vcc+0.5

BIAS

Temperature Under Bias

-40 to +85

STG

Storage Temperature

-60 to +150

Power Dissipation

1.0 W

OUT

DC Output Current

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Revision 2.1
Jan.

2004

R0201-BS616LV8016

SYMBOL

PARAMETER

TEST CONDITIONS

MIN. TYP.

(1)

MAX.

UNITS

Vcc for Data Retention

CE1 Vcc - 0.2V or CE20.2V,
V

Vcc - 0.2V or V

0.2V

1.5

CCDR

Data Retention Current

CE1 Vcc - 0.2V or CE20.2V,
V

Vcc - 0.2V or V

0.2V

0.8

2.5

CDR

Chip Deselect to Data
Retention Time

Operation Recovery Time

See Retention Waveform

(2)

DATA RETENTION CHARACTERISTICS

( TA = -40 to + 85

C )

1. Vcc = 1.5V, T

= + 25

2. t

= Read Cycle Time

3. I

(Max.) is

1.3uA

at T

=70

DC ELECTRICAL CHARACTERISTICS

( TA = -40 to + 85

C )

BSI

BS616LV8016

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP.

(1)

MAX.

UNITS

Vcc=3V

-0.5

0.8

Guaranteed Input Low

Voltage

(3)

Vcc=5V

-0.5

0.8

Vcc=3V

2.0

Vcc+0.3

Guaranteed Input High

Voltage

(3)

Vcc=5V

2.2

Vcc+0.3

Input Leakage Current

Vcc = Max, V

= 0V to Vcc

Output Leakage Current

Vcc = Max, CE1 = V

, or CE2 =

, or

OE = V

, V

I/O

= 0V to Vcc

Vcc=3V

0.4

Output Low Voltage

Vcc = Max, I

= 2mA

Vcc=5V

0.4

Vcc=3V

2.4

Output High Voltage

Vcc = Min, I

= -1mA

Vcc=5V

2.4

Vcc=3V

Operating Power Supply

Current

CE1 = V

and CE2 = V

, I

= 0mA, F = Fmax

(2)

Vcc=5V

Vcc=3V

CCSB

Standby Current-TTL

CE1 = V

or CE2 = V

, I

= 0mA

Vcc=5V

Vcc=3V

1.5

CCSB1

Standby Current-CMOS

CE1

Vcc-0.2V or

CE2

0.2V ;V

Vcc - 0.2V

or V

0.2V

Vcc=5V

8.0

110

LOW V

DATA RETENTION WAVEFORM (1)

( CE1 Controlled )

CE1

Data Retention Mode

Vcc

CDR

Vcc

Vcc

1.5V

CE1 Vcc - 0.2V

LOW V

DATA RETENTION WAVEFORM (2)

( CE2 Controlled )

CE2

Data Retention Mode

Vcc

CDR

Vcc

Vcc

1.5V

CE2 0.2V

(4)

(5)

70ns

1. Typical characteristics are at TA = 25

C. 2. Fmax = 1/t

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc

_Max.

is 31mA(@3.0V) / 76mA(@5.0V) under 55ns operation. 5.I

5uA/55uA

at Vcc=3.0V/5.0V and T

=70

(3)

Revision 2.1
Jan.

2004

R0201-BS616LV8016

JEDEC

PARAMETER

NAME

PARAMETER

NAME

DESCRIPTION

UNIT

AVAX

Read Cycle Time

AVQV

Address Access Time

ELQV

ACS1

Chip Select Access Time

(CE1)

ELQV

ACS2

Chip Select Access Time

(CE2)

Data Byte Control Access Time

(LB,UB)

GLQV

Output Enable to Output Valid

ELQX

CLZ

Chip Select to Output Low Z (CE2,CE1)

Data Byte Control to Output Low Z (LB,UB)

GLQX

OLZ

Output Enable to Output in Low Z

EHQZ

CHZ

Chip Deselect to Output in High Z (CE2,CE1)

BDO

Data Byte Control to Output High Z (LB,UB)

GHQZ

OHZ

Output Disable to Output in High Z

AXOX

Data Hold from Address Change

AC ELECTRICAL CHARACTERISTICS

( TA = -40 to + 85

C )

READ CYCLE

AC TEST CONDITIONS

(Test Load and Input/Output Reference)

KEY TO SWITCHING WAVEFORMS

WAVEFORM

INPUTS

OUTPUTS

MUST BE
STEADY

MAY CHANGE
FROM H TO L

DON T CARE:
ANY CHANGE
PERMITTED

DOES NOT
APPLY

MUST BE
STEADY

WILL BE
CHANGE
FROM H TO L

CHANGE :
STATE
UNKNOWN

CENTER
LINE IS HIGH
IMPEDANCE
"OFF "STATE

MAY CHANGE
FROM L TO H

WILL BE
CHANGE
FROM L TO H

BSI

BS616LV8016

(1)

1. t

is 35ns/30ns (@speed=70ns/55ns) with address toggle .

is 70ns/55ns (@speed=70ns/55ns) without address toggle .

NOTE :

Input Pulse Levels

Vcc / 0V

Input Rise and Fall Times

1V/ns

Input and Output
Timing Reference Level

0.5Vcc

Output Load

= 30pF+1TTL

= 100pF+1TTL

MIN. TYP. MAX.

Vcc = 2.7~5.5V

Vcc = 3.0~5.5V

CYCLE TIME : 70ns CYCLE TIME : 55ns

Revision 2.1
Jan.

2004

R0201-BS616LV8016

BSI

BS616LV8016

NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V

and CE2 = V

IH.

3. Address valid prior to or coincident with CE transition low.
4. OE = V

5. The parameter is guaranteed but not 100% tested.

SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE1

(1,2,4)

OUT

ADDRESS

READ CYCLE2

(1,3,4)

CLZ

CHZ

(5)

OUT

CE1

(5)

ACS1

CE2

ACS2

READ CYCLE3

(1,4)

OUT

LB,UB

CE1

ADDRESS

CLZ

(5)

ACS1

CHZ

(1,5)

OHZ

(5)

OLZ

BDO

CE2

ACS2

Revision 2.1
Jan.

2004

R0201-BS616LV8016

AC ELECTRICAL CHARACTERISTICS

( TA = -40 to + 85

C )

WRITE CYCLE

SWITCHING WAVEFORMS (WRITE CYCLE)

BSI

BS616LV8016

JEDEC

PARAMETER

NAME

PARAMETER

NAME

DESCRIPTION

UNIT

AVAX

Write Cycle Time

E1LWH

Chip Select to End of Write

AVWL

Address Setup Time

AVWH

Address Valid to End of Write

WLWH

Write Pulse Width

WHAX

Write recovery Time

(CE2,CE1,WE)

Date Byte Control to End of Write

(LB,UB)

WLQZ

WHZ

Write to Output in High Z

DVWH

Data to Write Time Overlap

WHDX

Data Hold from Write Time

GHQZ

OHZ

Output Disable to Output in High Z

WHOX

End of Write to Output Active

WRITE CYCLE1

(1)

(3)

(11)

(2)

OHZ

(4,10)

(3)

OUT

CE1

ADDRESS

(5)

CE2

(5)

LB,UB

(1)

1. t

is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; t

is 70ns/55ns (@speed=70ns/55ns) without address toggle.

NOTE :

MIN. TYP. MAX.

Vcc = 2.7~5.5V

Vcc = 3.0~5.5V

CYCLE TIME : 70ns CYCLE TIME : 55ns

Revision 2.1
Jan.

2004

R0201-BS616LV8016

BSI

BS616LV8016

NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals

must be active to initiate a write and any one signal can terminate a write by going inactive.
The data input setup and hold timing should be referenced to the second transition edge of
the signal that terminates the write.

3. T

is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle.

4. During this period, DQ pins are in the output state so that the input signals of opposite phase

to the outputs must not be applied.

5. If the CE2 high transition or CE1 low transition occurs simultaneously with the WE low transitions or after the WE

transition, output remain in a high impedance state.

6. OE is continuously low (OE = V

7. D

OUT

is the same phase of write data of this write cycle.

8. D

OUT

is the read data of next address.

9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of

opposite phase to the outputs must not be applied to them.

10. The parameter is guaranteed but not 100% tested.
11. T

is measured from the later of CE2 going high or CE1 going low to the end of write.

WRITE CYCLE2

(1,6)

(11)

(2)

WHZ

(4,10)

(3)

OUT

CE1

ADDRESS

(7)

(8)

(8,9)

CE2

LB,UB

(5)

Revision 2.1
Jan.

2004

BS616LV8016

BSI

R0201-BS616LV8016

ORDERING INFORMATION

PACKAGE DIMENSIONS

.
1

3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.

1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.

N E

NOTES:

12.0

9.0

3.75

5.25

0.75

SIDE VIEW

D 0.1

1.4 Max.

0.2

0.0

SOLDER BALL 0.35±0.05

VIEW A

3.375

2
.
625

48 mini-BGA (9mm x 12mm)

Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.

BS616LV8016 X X

Y Y

GRADE
C: +0

C ~ +70

I: -40

C ~ +85

SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free

PACKAGE
F :BGA-48-0912

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