Revision 2.4
April 2002
1
Ultra Low Power/Voltage CMOS SRAM
256K x 16 or 512K x 8 bit switchable
The BS616UV4020 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 262,144 words by 16 bits or
524,288 bytes by 8 bits selectable by CIO pin and operates from a
wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.2uA and maximum access time of 70/100ns in 2V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW
output enable(OE) and three-state output drivers.
The BS616UV4020 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616UV4020 is available in DICE form and 48-pin BGA type.
Ultra low operation voltage : 1.8 ~ 3.6V
Ultra low power consumption :
Vcc = 2.0V C-grade: 15mA (Max.) operating current
I-grade : 20mA (Max.) operating current
0.2uA (Typ.) CMOS standby current
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
High speed access time :
-70 70ns (Max.) at Vcc=2.0V
-10 100ns (Max.) at Vcc=2.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by CIO, LB and UB pin
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PRODUCT FAMILY
Brilliance Semiconductor Inc
. reserves the right to modify document contents without notice.
BS616UV4020
Row
Decoder
Memory Array
2048 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A1 A2 A3
Data
Input
Buffer
Control
Vss
Vdd
OE
WE
D0
A8
A12
16(8)
16(8)
16(8)
16(8)
CE1
D15
A11
A7
A17
A13
14(16)
128(256)
2048
2048
22
A10
A9
A0
A6
A4
A16
A14
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
A15
CIO
CE2
(SAE)
PIN CONFIGURATION
R0201-BS616UV4020
POWER DISSIPATION
SPEED
(ns)
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc RANGE
Vcc=2V
Vcc=3V
Vcc=2V
Vcc=3V
PKG TYPE
BS616UV4020DC
DICE
BS616UV4020BC
+0
O
C to +70
O
C
1.8V ~ 3.6V
70 / 100
1uA
1.5uA
15mA
20mA
DICE
BGA-48-0810
BS616UV4020DI
BS616UV4020BI
-40
O
C to +85
O
C
1.8V ~ 3.6V
70 / 100
2uA
3uA
20mA
25mA
BGA-48-0810
BSI
Vcc=2V
Vcc=3V
Revision 2.4
April 2002
2
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 16-bit words in the RAM.
SAE Address Input
This address input incorporates with the above 18 address inputs select one of the
524,288 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
CIO x8/x16 select input
This input selects the organization of the SRAM. 262,144 x 16-bit words configuration
is selected if CIO is HIGH. 524,288 x 8-bit bytes configuration is selected if CIO is
LOW.
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active to read
from or write to the device. If either chip enable is not active, the device is deselected
and is in a standby power mode. The DQ pins will be in the high impedance state
when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
DQ0 - DQ15 Data Input/Output
These 16 bi-directional ports are used to read data from or write data into the RAM.
Ports
Vcc
Power Supply
Gnd
Ground
PIN DESCRIPTIONS
BSI
BS616UV4020
R0201-BS616UV4020
Revision 2.4
April 2002
3
TRUTH TABLE
BSI
BS616UV4020
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
C
IN
Input
Capacitance
V
IN
=0V
6
pF
C
DQ
Input/Output
Capacitance
V
I/O
=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0
O
C to +70
O
C
1.8V ~ 3.6V
Industrial
-40
O
C to +85
O
C
1.8V ~ 3.6V
ABSOLUTE MAXIMUM RATINGS
(1)
OPERATING RANGE
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
1. This parameter is guaranteed and not tested.
SYMBOL
PARAMETER
RATING
UNITS
V
TERM
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
T
BIAS
Temperature Under Bias
-40 to +125
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
R0201-BS616UV4020
MODE CE1
CE2
OE
WE
CIO
LB
UB
SAE
D0~7
D8~15
VCC
Current
H X
X X
Fully Standby
X L
X X X
X X
X High-Z
High-Z I
CCSB
, I
CCSB1
Output
Disable
L H H H X X X X High-Z
High-Z
I
CC
L H
Dout High-Z
H L
High-Z Dout
Read from SRAM
( WORD mode )
L H L H H
L L
X
Dout Dout
I
CC
L H
Din
X
H L
X
Din
Write to SRAM
( WORD mode )
L H X L H
L L
X
Din Din
I
CC
Read from SRAM
( BYTE Mode )
L H L H L X X A-1 Dout High-Z
I
CC
Write to SRAM
( BYTE Mode )
L H X L L X X A-1 Din
X
I
CC
Revision 2.4
April 2002
4
1. Typical characteristics are at TA = 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
DC ELECTRICAL CHARACTERISTICS
(TA = 0
o
C to +70
o
C)
BSI
BS616UV4020
R0201-BS616UV4020
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
Vcc=2.0V
-0.5
--
0.6
V
IL
Guaranteed Input Low
Voltage
(2)
Vcc=3.0V
-0.5
0.8
V
Vcc=2.0V
1.4
--
Vcc+0.2
V
IH
Guaranteed Input High
Voltage
(2)
Vcc=3.0V
2.0
Vcc+0.2
V
I
IL
Input Leakage Current
Vcc = Max, V
IN
= 0V to Vcc
--
--
1
uA
I
OL
Output Leakage Current
Vcc = Max, CE1 = V
IH
or CE2=V
IL
or OE = V
IH
, V
I/O
= 0V to Vcc
--
--
1
uA
Vcc=2.0V
--
--
0.4
V
OL
Output Low Voltage
Vcc = Max, I
OL
= 1mA
Vcc=3.0V
--
--
0.4
V
Vcc=2.0V
1.6
--
--
V
OH
Output High Voltage
Vcc = Min, I
OH
= -0.5mA
Vcc=3.0V
2.4
--
--
V
Vcc=2.0V
--
--
15
I
CC
Operating Power Supply
Current
Vcc = Max, CE1= V
IL
, CE2=V
IH
I
DQ
= 0mA, F = Fmax
(3)
Vcc=3.0V
--
--
20
mA
Vcc=2.0V
--
--
0.6
I
CCSB
Standby Current - TTL
Vcc = Max, CE1 = V
IH
or CE2=V
IL
I
DQ
= 0mA
Vcc=3.0V
--
--
1
mA
Vcc=2.0V
--
0.2
1
I
CCSB1
Standby Current -CMOS
Vcc = Max, CE1 Vcc-0.2V or
CE2 0.2V ;V
IN
Vcc - 0.2V or
V
IN
0.2V
Vcc=3.0V
--
0.25
1.5
uA
Revision 2.4
April 2002
5
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
DR
Vcc for Data Retention
CE1
Vcc - 0.2V or CE2
0.2V ;
V
IN
Vcc - 0.2V or V
IN
0.2V
1.5
--
--
V
I
CCDR
Data Retention Current
CE1
Vcc - 0.2V or CE2
0.2V
V
IN
Vcc - 0.2V or V
IN
0.2V
--
0.1
1
uA
t
CDR
Chip Deselect to Data
Retention Time
0
--
--
ns
t
R
Operation Recovery Time
See Retention Waveform
T
RC
(2)
--
--
ns
DATA RETENTION CHARACTERISTICS
( TA = 0 to + 70
o
C )
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
BSI
BS616UV4020
LOW V
CC
DATA RETENTION WAVEFORM (1)
( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t
CDR
Vcc
t
R
V
IH
V
IH
Vcc
V
DR
1.5V
CE1
Vcc - 0.2V
LOW V
CC
DATA RETENTION WAVEFORM (2)
( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t
CDR
Vcc
t
R
V
IL
V
IL
Vcc
V
DR
1.5V
CE2
0.2V
R0201-BS616UV4020
Revision 2.4
April 2002
6
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
Vcc/0V
5ns
0.5Vcc
AC ELECTRICAL CHARACTERISTICS
( TA = 0 to + 70
o
C , Vcc=2.0V )
READ CYCLE
AC TEST CONDITIONS
AC TEST LOADS AND WAVEFORMS
BSI
BS616UV4020
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
DON T CARE:
ANY CHANGE
PERMITTED
DOES NOT
APPLY
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
"OFF "STATE
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS616UV4020-70
MIN. TYP. MAX.
UNIT
Data Byte Control to Output High Z
Read Cycle Time
t
AVAX
t
AVQV
t
E1LQV
t
GLQV
t
BE
t
E1HQZ
t
GHQZ
t
AXQX
t
BDO
t
GLQX
t
E1LQX
t
BA
t
RC
t
AA
t
ACS1
t
BA
t
OE
t
CLZ
t
BE
t
OLZ
t
CHZ
t
BDO
t
OHZ
t
OH
Address Access Time
Chip Select Access Time
Data Byte Control Access Time
Chip Select to Output Low Z
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Output Disable to Output in High Z
Output Disable to Output Address Change
Data Byte Control to Output Low Z
70
10
10
10
0
0
0
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Output Enable to Output Valid
(CE1)
(CE2,CE1)
70
70
70
35
35
35
35
30
BS616UV4020-10
MIN. TYP. MAX.
100
15
15
15
0
0
0
15
100
100
100
50
50
40
40
35
(CE2,CE1)
ns
t
E2LQV
t
ACS2
(CE2)
Chip Select Access Time
(LB,UB)
(LB,UB)
(LB,UB)
R0201-BS616UV4020
800
THEVENIN EQUIVALENT
ALL INPUT PULSES
10%
90%
Vcc
GND
5ns
90%
10%
1.2V
OUTPUT
FIGURE 2
2V
OUTPUT
INCLUDING
JIG AND
SCOPE
1333
2000
5PF
FIGURE 1B
2V
OUTPUT
INCLUDING
JIG AND
SCOPE
1333
100PF
FIGURE 1A
2000
(1)
NOTE :
1. t
BA
is 35ns/50ns (@speed=70ns/100ns) with address toggle .
t
BA
is 70ns/100ns (@speed=70ns/100ns) without address toggle .
Revision 2.4
April 2002
7
BSI
BS616UV4020
R0201-BS616UV4020
READ CYCLE3
(1,4)
READ CYCLE2
(1,3,4)
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2 = V
IH
.
3. Address valid prior to or coincident with CE1 transition low and CE2 transition high.
4. OE = V
IL
.
5. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t
RC
t
OH
t
AA
D
OUT
ADDRESS
t
OH
t
CLZ
t
CHZ
(5)
D
OUT
CE1
(5)
t
ACS1
CE2
t
OH
t
RC
t
OE
D
OUT
LB,UB
CE1
OE
ADDRESS
t
CLZ
(5)
t
ACS1
t
CHZ
(1,5)
t
OHZ
(5)
t
OLZ
t
AA
t
BDO
t
BA
t
BE
CE2
t
ACS2
t
ACS2
Revision 2.4
April 2002
8
AC ELECTRICAL CHARACTERISTICS
( TA = 0 to + 70
o
C , Vcc=2.0V )
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS616UV4020-70
MIN. TYP. MAX.
UNIT
Data Hold from Write Time
Write Cycle Time
t
AVAX
t
E1LWH
t
AVWL
t
WLWH
t
BW
t
DVWH
t
GHQZ
t
WHQX
t
WHDX
t
WLQZ
t
WHAX
t
AVWH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
BW
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Output Disable to Output in High Z
End of Write to Output Active
Data Byte Control to End of Write
70
70
0
70
35
0
30
0
30
0
0
5
30
30
ns
ns
(CE2, CE1, WE)
Write Pulse Width
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1
(1)
BS616UV4020-10
MIN. TYP. MAX.
100
100
0
100
50
0
40
0
40
0
0
10
40
40
BSI
BS616UV4020
(LB,UB)
R0201-BS616UV4020
t
WR
t
WC
(3)
t
CW
(11)
t
BW
(2)
t
WP
t
AW
t
OHZ
(4,10)
t
AS
(3)
t
DH
t
DW
D
IN
D
OUT
WE
CE1
OE
ADDRESS
(5)
CE2
(5)
(5)
LB,UB
(1)
1. t
BW
is 30ns/40ns (@speed=70ns/100ns) with address toggle .
t
BW
is 70ns/100ns (@speed=70ns/100ns) without address toggle .
NOTE :
Revision 2.4
April 2002
9
BSI
BS616UV4020
R0201-BS616UV4020
WRITE CYCLE2
(1,6)
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low.
All signals must be active to initiate a write and any one signal can terminate
a write by going inactive. The data input setup and hold timing should be referenced to the
second transition edge of the signal that terminates the write.
3. T
WR
is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite
phase to the outputs must not be applied.
5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions
or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = V
IL
).
7. D
OUT
is the same phase of write data of this write cycle.
8. D
OUT
is the read data of next address.
9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the
data input signals of opposite phase to the outputs must not be applied to them.
10. Transition is measured 500mV from steady state with CL = 30pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
11. T
CW
is measured from the later of CE2 going high or CE1 going low to the end of write.
t
WC
t
CW
(11)
(2)
t
WP
t
AW
t
WHZ
(4,10)
t
AS
t
WR
(3)
t
DH
t
DW
D
IN
D
OUT
WE
CE1
ADDRESS
t
DH
(7)
(8)
(8,9)
CE2
LB,UB
t
BW
(5)
(5)
Revision 2.4
April 2002
10
BSI
BS616UV4020
R0201-BS616UV4020
PACKAGE
B :BGA - 48 PIN(8x10mm)
D :DICE
ORDERING INFORMATION
BS616UV4020
X X -- Y Y
GRADE
C: +0
o
C ~ +70
o
C
I: -40
o
C ~ +85
o
C
SPEED
70: 70ns
10: 100ns
E0
.
1
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
N E
D
NOTES:
48
10.0
8.0
E1
D1
e
3.75
5.25
0.75
SIDE VIEW
D 0.1
D1
1.4 M
a
x
.
e
E1
0.25
0.05
SOLDER BALL
0.35 0.05
VIEW A
48 mini-BGA (8 x 10mm)
PACKAGE DIMENSIONS (continued)
Revision 2.4
April 2002
11
BSI
R0201-BS616UV4020
REVISION HISTORY
Revision Description
Date
Note
2.2
2001 Data Sheet release
Apr. 15, 2001
2.3
Modify Standby Current (Typ.
and Max.)
Jun. 29, 2001
2.4
Modify some AC parameters
April,11,2002
BS616UV4020
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