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R0201-BS62LV4001
Revision 2.5
April 2002
1
BSI
Low Power/Voltage CMOS SRAM
512K X 8 bit
Wide Vcc operation voltage : 2.4V ~ 5.5V
Low power consumption
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I -grade: 25mA (Max.) operating current
0.25uA (Typ.) CMOS standby current
Vcc = 5.0V C-grade: 45mA (Max.) operation current
I -grade: 50mA (Max.) operating current
1.5uA (Typ.) CMOS standby current
High speed access time :
-70 70ns (Max.) at Vcc = 3.0V
-10 100ns (Max.) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE and OE options
The BS62LV4001 is a high performance, low power CMOS
Static Random Access Memory organized as 524,288 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with maximum access time of 70/ 100ns
in 3.0V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE), and active LOW output enable (OE) and three-state
output drivers.
The BS62LV4001 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV4001 is available in DICE form, JEDEC standard 32 pin
SOP, 32 pin TSOPII, 32 pin TSOP and 32 pin Small SOP.
FEATURES
GENERAL DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
. reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
2048 X 2048
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Buffer
Output
Address Input Buffer
Data
Buffer
Input
Control
Gnd
Vdd
OE
WE
CE
DQ5
DQ4
A13
A17
A15
A18
A16
A14
A12
A7
A6
A5
A4
8
8
8
8
DQ7
DQ6
DQ3
DQ2
DQ1
DQ0
16
256
2048
2048
22
A11 A9 A8 A3 A2 A1 A0 A10
BS62LV4001
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
BS62LV4001SC
BS62LV4001SI
BS62LV4001EC
BS62LV4001EI
BS62LV4001PC
BS62LV4001PI
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A11
A9
A8
A13
WE
A17
A15
C
A18
A16
A14
A12
A7
A6
A5
A4
VC
BS62LV4001TC
BS62LV4001STC
BS62LV4001TI
BS62LV4001STI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
R0201-BS62LV4001
Revision 2.5
April 2002
2
Name
Function
A0-A18 Address Input
These 19 address inputs select one of the 524,288 x 8-bit words in the RAM
CE Chip Enable Input
CE is active LOW. Chip enable must be active when data read from or write to the
device. if chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
These 8 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
TRUTH TABLE
PIN DESCRIPTIONS
BSI
MODE
WE
CE
OE
I/O OPERATION
Vcc CURRENT
Not selected
X
H
X
High Z
I
CCSB
, I
CCSB1
Output Disabled
H
L
H
High Z
I
CC
Read
H
L
L
D
OUT
I
CC
Write
L
L
X
D
IN
I
CC
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
C
IN
Input
Capacitance
V
IN
=0V
6 pF
C
DQ
Input/Output
Capacitance
V
I/O
=0V
8 pF
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
1. This parameter is guaranteed and not tested.
ABSOLUTE MAXIMUM RATINGS
(1)
OPERATING RANGE
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
PARAMETER
RATING
UNITS
V
TERM
Terminal Voltage with
Respect to GND
-0.5 to
Vcc+0.5
V
T
BIAS
Temperature Under Bias
-40 to +125
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
BS62LV4001
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0
O
C to +70
O
C
2.4~5.5V
Industrial
-40
O
C to +85
O
C
2.4~5.5V
R0201-BS62LV4001
Revision 2.5
April 2002
3
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
Vcc=3.0V
V
IL
Guaranteed Input Low
Voltage
(2)
Vcc=5.0V
-0.5 -- 0.8 V
Vcc=3.0V
2.0
V
IH
Guaranteed Input High
Voltage
(2)
Vcc=5.0V
2.2
-- Vcc+0.2
V
I
IL
Input Leakage Current
Vcc = Max, V
IN
= 0V to Vcc
--
--
1
uA
I
OL
Output Leakage Current
Vcc = Max, CE = V
IH
, or OE = V
IH
,
V
I/O
= 0V to Vcc
-- -- 1 uA
Vcc=3.0V
V
OL
Output Low Voltage
Vcc = Max, I
OL
= 2mA
Vcc=5.0V
-- -- 0.4 V
Vcc=3.0V
V
OH
Output High Voltage
Vcc = Min, I
OH
= -1mA
Vcc=5.0V
2.4 -- -- V
Vcc=3.0V
-- -- 20
I
CC
Operating Power Supply
Current
CE = V
IL
, I
DQ
= 0mA, F = Fmax
(3)
Vcc=5.0V
-- -- 45
mA
Vcc=3.0V
-- -- 1
I
CCSB
Standby Current-TTL
CE = V
IH
, I
DQ
= 0mA
Vcc=5.0V
-- -- 2
mA
Vcc=3.0V
-- 0.25 1.5
I
CCSB1
Standby
Current-CMOS
CE
Vcc-0.2V,
V
IN
Vcc - 0.2V or V
IN
0.2V
Vcc=5.0V
-- 1.5 15
uA
1. Typical characteristics are at T
A
= 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
DATA RETENTION CHARACTERISTICS
( TA = 0 to + 70
o
C )
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
DC ELECTRICAL CHARACTERISTICS
( TA = 0 to + 70
o
C )
BSI
LOW V
CC
DATA RETENTION WAVEFORM
( CE Controlled )
CE
Data Retention Mode
Vcc
t
CDR
Vcc
t
R
V
IH
V
IH
Vcc
V
DR
1.5V
CE Vcc - 0.2V
BS62LV4001
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
V
DR
Vcc for Data Retention
CE
Vcc - 0.2V
V
IN
Vcc - 0.2V or V
IN
0.2V
1.5 -- --
V
I
CCDR
Data Retention Current
CE
Vcc - 0.2V
V
IN
Vcc - 0.2V or V
IN
0.2V
-- 0.1 1
uA
t
CDR
Chip Deselect to Data
Retention Time
0 -- --
ns
t
R
Operation Recovery Time
See Retention Waveform
T
RC
(2)
-- --
ns
R0201-BS62LV4001
Revision 2.5
April 2002
4
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS62LV4001-70
MIN. TYP. MAX.
BS62LV4001-10
MIN. TYP. MAX.
UNIT
t
AVAX
t
RC
Read Cycle Time
70
--
--
100
--
--
ns
t
AVQV
t
AA
Address Access Time
--
--
70
--
--
100
ns
t
ELQV
t
ACS
Chip Select Access Time
--
--
70
--
--
100
ns
t
GLQV
t
OE
Output Enable to Output Valid
--
--
35
--
--
50
ns
t
ELQX
t
CLZ
Chip Select to Output Low Z
10
--
--
15
--
--
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z
10
--
--
15
--
--
ns
t
EHQZ
t
CHZ
Chip Deselect to Output in High Z
0
--
35
0
-
4
-
0
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
0
--
30
0
-
3
-
5
ns
t
AXOX
t
OH
Output Disable to Output Address Change
10
--
--
15
--
--
ns
Input Pulse Levels
Input Rise and Fall Times
Input and Output
Timing Reference Level
Vcc/0
5ns
0.5Vcc
AC ELECTRICAL CHARACTERISTICS
( TA = 0 to + 70
o
C , Vcc = 3.0V )
READ CYCLE
AC TEST CONDITIONS
AC TEST LOADS AND WAVEFORMS
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
DON T CAR
ANY CHANG
PERMITTED
E:
CHANGE :
E
STATE
DOES NOT
APPLY
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
"OFF "STATE
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
BSI
BS62LV4001
667
THEVENIN EQUIVALENT
ALL INPUT PULSES
10%
90%
Vcc
GND
5ns
90%
10%
1.73V
OUTPUT
FIGURE 2
3.3V
OUTPUT
INCLUDING
JIG AND
SCOPE
1269
1404
5PF
FIGURE 1B
3.3V
OUTPUT
INCLUDING
JIG AND
SCOPE
1269
100PF
FIGURE 1A
1404
R0201-BS62LV4001
Revision 2.5
April 2002
5
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
IL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. Transition is measured 500mV from steady state with C
L
= 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
BSI
BS62LV4001
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t
RC
t
OH
t
AA
D
OUT
ADDRESS
t
OH
READ CYCLE3
(1,4)
READ CYCLE2
(1,3,4)
t
CLZ
t
CHZ
(5)
D
OUT
CE
(5)
t
ACS
t
OH
t
RC
t
OE
D
OUT
CE
OE
ADDRESS
t
CLZ
(5)
t
ACS
t
CHZ
(1,5)
t
OHZ
(5)
t
OLZ
t
AA
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