2005 California Micro Devices Corp. All rights reserved.
08/30/05
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
1
CM1426
PRELIMINARY
LCD and Camera EMI Filter Array with ESD Protection
Features
Four, six and eight channels of EMI filtering with
integrated ESD protection
0.5mm pitch, 10-bump, 1.96mm x 1.33mm foot-
print Chip Scale Package (CM1426-04)
0.5mm pitch, 15-bump, 2.96mm x 1.33mm foot-
print Chip Scale Package (CM1426-06)
0.5mm pitch, 20-bump, 3.96mm x 1.33mm foot-
print Chip Scale Package (CM1426-08)
Pi-style EMI filters in a capacitor-resistor-capacitor
(C-R-C) network
8kV ESD protection on each channel
(IEC 61000-4-2 Level 4, contact discharge)
15kV ESD protection on each channel (HBM)
Greater than 20dB attenuation (typical) at 1 GHz
Chip Scale Package features extremely low
lead inductance for optimum filter and ESD
performance
Optiguard
TM
coated for improved reliability at
assembly
Lead-free version available
Applications
LCD and Camera data lines in mobile handsets
I/O port protection for mobile handsets, notebook
computers, PDAs etc.
EMI filtering for data ports in cell phones, PDAs or
notebook computers.
Wireless handsets
Handheld PCs/PDAs
LCD and camera modules
Product Description
The CM1426 is a family of pi-style EMI filter arrays with
ESD protection, which integrates four, six and eight fil-
ters (C-R-C) in a Chip Scale Package with 0.50mm
pad pitch. The CM1426 has component values of
8.5pF-100
-8.5pF per channel. The CM1426 has a
cut-off frequency of 230MHz and can be used in appli-
cations where the data rates are as high as 92Mbps.
The parts include avalanche-type ESD diodes on every
pin, which provide a very high level of protection for
sensitive electronic components that may be subjected
to electrostatic discharge (ESD). The ESD protection
diodes safely dissipate ESD strikes of
8kV, well
beyond the maximum requirement of the IEC61000-4-
2 international standard. Using the MIL-STD-883
(Method 3015) specification for Human Body Model
(HBM) ESD, the pins are protected for contact dis-
charges at greater than
15kV.
These devices are particularly well-suited for portable
electronics (e.g. wireless handsets, PDAs, notebook
computers) because of their small package and easy-
to-use pin assignments. In particular, the CM1426 is
ideal for EMI filtering and protecting data and control
lines for the I/O data ports, LCD display and camera
interface in mobile handsets.
The CM1426 incorporates Optiguard
TM
which results in
improved reliability at assembly. The CM1426 is avail-
able in a space-saving, low-profile Chip Scale Package
with optional lead-free finishing.
100
8.5pF
8.5pF
FILTER+ESDn*
GND*
FILTER+ESDn*
Electrical Schematic
1 of 4, 6 or 8 EMI/RFI + ESD Channels
* See Package/Pinout Diagram
for expanded pin information.
(Pins B1-Bm)
(Pins A1-An)
(Pins C1-Cn)
2005 California Micro Devices Corp. All rights reserved.
08/30/05
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
3
CM1426
PRELIMINARY
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Note 2: Lead-free devices are specified by using a "+" character for the top side orientation mark.
Specifications
PART NUMBERING INFORMATION
Bumps
Package
Standard Finish
Lead-free Finish
2
Ordering Part
Number
1
Part Marking
Ordering Part
Number
1
Part Marking
10
CSP
CM1426-04CS
N264
CM1426-04CP
N264
15
CSP
CM1426-06CS
N266
CM1426-06CP
N266
20
CSP
CM1426-08CS
N268
CM1426-08CP
N268
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
Storage Temperature Range
-65 to +150
C
DC Power per Resistor
100
mW
DC Package Power Rating
500
mW
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature Range
-40 to +85
C
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE1)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
R
Resistance
80
100
120
C
TOTAL
Total Channel Capacitance
At 2.5VDC Reverse
Bias, 1MHz, 30mVAC
13.6
17
20.4
pF
C
Capacitance C1
At 2.5VDC Reverse
Bias, 1MHz, 30mVAC
6.8
8.5
10.2
pF
V
DIODE
Standoff Voltage
I
DIODE
=10
A
6.0
V
I
LEAK
Diode Leakage Current (reverse bias)
V
DIODE
=
3.3V
0.1
1
A
V
SIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
I
LOAD
= 10mA
I
LOAD
= -10mA
5.6
-1.5
6.8
-0.8
9.0
-0.4
V
V
V
ESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883, Method
3015
b) Contact Discharge per IEC 61000-4-2 Level 4
Notes 2 and 3
15
8
kV
kV
2005 California Micro Devices Corp. All rights reserved.
4
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
08/30/05
CM1426
PRELIMINARY
Note 1: T
A
=25
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: These parameters are guaranteed by design and characterization.
R
DYN
Dynamic Resistance
Positive
Negative
2.3
0.9
f
C
Cut-off Frequency
Z
SOURCE
=50
, Z
LOAD
=50
R=100
, C=17pF
230
MHz
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE1)
2005 California Micro Devices Corp. All rights reserved.
08/30/05
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
Tel: 408.263.3214
Fax: 408.263.7846
www.calmicro.com
5
CM1426
PRELIMINARY
Performance Information
Typical Filter Performance (T
A
=25C, DC Bias=0V, 50 Ohm Environment)
Figure 1. Insertion Loss vs. Frequency (A1-C1 to GND B1)
Figure 2. Insertion Loss vs. Frequency (A2-C2 to GND B1)
PDF 
ZIP