2003 California Micro Devices Corp. All rights reserved.
10/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
1
CSPESD304
4-Channel ESD Array in CSP
Features
Four channels of ESD protection
+
15kV ESD protection on each channel
(IEC 61000-4-2 Level 4, contact discharge)
+
30kV ESD protection on each channel (HBM)
Chip Scale Package features extremely low
lead inductance for optimum ESD protection
5-bump, 0.950mm X 1.410mm footprint
Chip Scale Package (CSP)
Lead-free version available
Applications
ESD protection for sensitive electronic equipment
I/O port and keypad and button circuitry
protection for portable devices
Can be used for EMI filtering when combined
with external series resistance
Wireless Handsets
Handheld PCs / PDAs
MP3 Players
Digital Camcorders
Notebooks
Desktop PCs
Product Description
The CSPESD304 is a quad ESD transient voltage
supression diode array. Each diode provides a very
high level of protection for sensitive electronic compo-
nents that may be subjected to electrostatic discharge
(ESD). These diodes are designed and characterized
to safely dissipate ESD strikes of 15kV, exceeding the
maximum requirement of the IEC 61000-4-2 interna-
tional standard. Using the MIL-STD-883 (Method 3015)
specification for Human Body Model (HBM) ESD, the
device provides protection for contact discharges to
greater than 30kV.
The CSPESD304 is particularly well suited for portable
electronics (e.g., cellular telephones, PDAs, notebook
computers) because of its small package format and
low weight.
The CSPESD304 is available in a space-saving, low-
profile Chip Scale Package with optional lead-free fin-
ishing.
Electrical Schematic
B2
ESD_1
GND
C1
C3
A1
A3
ESD_2 ESD_3 ESD_4
2003 California Micro Devices Corp. All rights reserved.
2
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
10/10/03
CSPESD304
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Note 2: Lead-free devices are specified by using a "
+
" character for the top side orientation mark.
PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
A1
ESD1
ESD Channel1
A3
ESD2
ESD Channel 2
B2
GND
Device Ground
C1
ESD3
ESD Channel 3
C3
ESD4
ESD Channel 4
ESD_1
ESD_2
ESD_3
ESD_4
A1
A3
C3
C1
GND
B2
Orientation
Marking
A1
E
2 3
1
C
B
A
Orientation
Marking
(see note 2)
PACKAGE / PINOUT DIAGRAMS
Notes:
CSPESD304
CSP Package
TOP VIEW
BOTTOM VIEW
(Bumps Down View)
(Bumps Up View)
1) These drawings are not to scale.
2) Lead-free devices are specified by using a "+" character for the top side orientation mark.
PART NUMBERING INFORMATION
Bumps
Package
Standard Finish
Lead-free Finish
2
Ordering Part
Number
1
Part Marking
Ordering Part
Number
1
Part Marking
5
CSP
CSPESD304
E
CSPESD304G
E
2003 California Micro Devices Corp. All rights reserved.
10/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846
L www.calmicro.com
3
CSPESD304
Specifications
Note 1: T
A
=-40 to +85
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Unused pins are left open
Note 4: These parameters are guaranteed by design and characterization.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
Storage Temperature Range
-65 to +150
C
DC Package Power Rating
200
mW
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature Range
-40 to +85
C
ELECTRICAL OPERATING CHARACTERISTICS
1
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
DIODE
Diode Reverse Breakdown Voltage
I
DIODE
= 10
A
5.5
V
I
LEAK
Diode Leakage Current
V
IN
=3.3V, T
A
=25C
100
nA
V
SIG
Signal Voltage
Positive Clamp
Negative Clamp
I
DIODE
= 10mA
5.6
-0.4
6.8
-0.8
9.0
-1.5
V
V
V
ESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Notes 2, 3 and 4
+30
+15
kV
kV
V
CL
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Notes 2, 3 and 4
+15
-8
V
V
C
DIODE
Diode Capacitance
At 2.5VDC Reverse Bias,
1MHz, 30mVAC
22
27
32
pF
2003 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846 L www.calmicro.com
10/10/03
CSPESD304
Performance Information
Diode Characteristics (nominal conditions unless specified otherwise)
Figure 1. Typical Diode Capacitance VS. Input Voltage (normalized to 2.5VDC)
Figure 2. Frequency Response (single channel vs. GND, in 50
system)
C
a
pacitanc
e (Normaliz
ed)
DC Voltage
2003 California Micro Devices Corp. All rights reserved.
10/10/03
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
L Tel: 408.263.3214
L Fax: 408.263.7846
L www.calmicro.com
5
CSPESD304
Application Information
Refer to Application Note AP-217, "The Chip Scale
Package", for a detailed description of Chip Scale
Packages offered by California Micro Devices.
Figure 3. Recommended Non-Solder Mask Defined Pad Illustration
Figure 4. Eutectic (SnPb) Solder
Ball Reflow Profile
Figure 5. Lead-free (SnAgCu) Solder
Ball Reflow Profile
PRINTED CIRCUIT BOARD RECOMMENDATIONS
PARAMETER
VALUE
Pad Size on PCB
0.275mm
Pad Shape
Round
Pad Definition
Non-Solder Mask defined pads
Solder Mask Opening
0.325mm Round
Solder Stencil Thickness
0.125 - 0.150mm
Solder Stencil Aperture Opening (laser cut, 5% tapered walls)
0.330mm Round
Solder Flux Ratio
50/50 by volume
Solder Paste Type
No Clean
Pad Protective Finish
OSP (Entek Cu Plus 106A)
Tolerance -- Edge To Corner Ball
+50
m
Solder Ball Side Coplanarity
+20
m
Maximum Dwell Time Above Liquidous
60 seconds
Soldering Maximum Temperature
260C
Solder Mask Opening
0.325mm DIA.
Non-Solder Mask Defined Pad
0.275mm DIA.
Solder Stencil Opening
0.330mm DIA.
200
250
150
100
50
0
1:00.0
2:00.0
3:00.0
4:00.0
Time (minutes)
T
emperature (
C)
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