2000 California Micro Devices Corp. All rights reserved.
8/25/2000
1
CALIFORNIA MICRO DEVICES
215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
PACDN042/043/
044/045/046
TRANSIENT VOLTAGE SUPPRESSOR ARRAYS
Features
2, 3, 4, 5, or 6 transient voltage suppressors in a single
surface-mount package.
Compact SMT packages save board space and ease
layout in space critical applications compared to
discrete solutions.
In-system ESD protection to 20kV contact discharge
per IEC 61000-4-2 International Standard.
Product Description
The PACDN042, PACDN043, PACDN044, PACDN045, and PACDN046 are transient voltage suppressor arrays that provide a very
high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The devices
are designed and characterized to safely dissipate ESD strikes at levels well beyond the maximum requirements set forth in the
IEC 61000-4-2 International Standard (Level 4, 8kV contact discharge). All pins are rated at 20kV ESD using the IEC 61000-4-
2 contact discharge method.
Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected for contact
discharges to greater than 30kV.
Applications
ESD protection of PC ports, e.g. USB port.
Protection of interface ports or IC pins
which are exposed to high levels of ESD.
C1470800
* ESD applied between channel pin and ground, one at a time. All other channels are open. All GND pins grounded.
This parameter is guaranteed by design and characterization..
Note: GND in this document refers to the lower supply voltage.
Schematic Configurations
S
N
O
I
T
A
C
I
F
I
C
E
P
S
D
R
A
D
N
A
T
S
r
e
t
e
m
a
r
a
P
.
n
i
M
.
p
y
T
.
x
a
M
ti
n
U
A
u
0
1
=
I
,
e
g
a
tl
o
V
ff
o
-
d
n
a
t
S
e
s
r
e
v
e
R
5
.
5
V
:
e
g
a
tl
o
V
p
m
a
l
C
l
a
n
g
i
S
A
m
0
1
,
p
m
a
l
C
e
vi
ti
s
o
P
6
.
5
8
.
6
0
.
8
V
A
m
0
1
,
p
m
a
l
C
e
vi
t
a
g
e
N
2
.
1
-
8
.
0
-
4
.
0
-
V
:
*
e
g
a
tl
o
v
d
n
a
t
s
h
ti
w
D
S
E
m
e
t
s
y
s
-
n
I
)
5
1
0
3
d
o
h
t
e
m
,
D
3
8
8
-
D
T
S
-
LI
M
(
l
e
d
o
M
y
d
o
B
n
a
m
u
H
0
3
V
k
d
o
h
t
e
m
e
g
r
a
h
c
si
d
t
c
a
t
n
o
c
,
2
-
4
-
0
0
0
1
6
C
E
I
0
2
V
k
e
vi
ti
s
o
P
e
g
r
a
h
c
si
d
D
S
E
g
n
ir
u
d
e
g
a
tl
o
v
g
n
i
p
m
a
l
C
2
1
V
e
vi
t
a
g
e
N
V
k
8
,)
5
1
0
3
d
o
h
t
e
M
(
D
3
8
8
-
D
T
S
-
LI
M
8
-
V
z
H
M
1
,
c
d
V
5
.
2
@
e
c
n
a
ti
c
a
p
a
C
0
3
F
p
:
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
g
n
it
a
r
e
p
O
0
4
-
5
8
C
e
g
a
r
o
t
S
5
6
-
0
5
1
3
4
1
-
T
O
S
,
5
-
3
2
T
O
S
,
3
2
T
O
S
:
g
n
it
a
R
r
e
w
o
P
e
g
a
k
c
a
P
5
2
2
.
0
W
P
O
S
M
,P
O
S
S
T
5
.
0
W
2000 California Micro Devices Corp. All rights reserved.
8/25/2000
215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com
2
PACDN042/043/
044/045/046
CALIFORNIA MICRO DEVICES
When placing an order please specify desired shipping: Tubes or Tape & Reel.
Typical Diode Capacitance vs. Reverse Voltage
0
10
20
30
40
50
60
0
1
2
3
4
5
Diode Reverse Voltage (V)
Diode Capacitance (pF)
N
O
I
T
A
M
R
O
F
N
I
G
N
I
R
E
D
R
O
T
R
A
P
D
R
A
D
N
A
T
S
e
g
a
k
c
a
P
r
e
b
m
u
N
t
r
a
P
g
n
i
r
e
d
r
O
s
n
i
P
e
l
y
t
S
3
3
2
T
O
S
3
Y
2
4
0
N
D
C
A
P
4
3
4
1
T
O
S
4
Y
3
4
0
N
D
C
A
P
5
5
-
3
2
T
O
S
5
Y
4
4
0
N
D
C
A
P
6
6
-
3
2
T
O
S
6
Y
5
4
0
N
D
C
A
P
8
P
O
S
S
T
T
4
4
0
N
D
C
A
P
8
P
O
S
M
M
6
4
0
N
D
C
A
P
PDF 
ZIP