N-Channel JFET
High Frequency Amplifier
2N4416 / 2N4416A / PN4416
FEATURES
Low Noise
Low Feedback Capacitance
Low Output Capacitance
High Transconductance
High Power Gain
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Source or Gate-Drain Voltage
2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C +150
o
C
Operating Temperature Range
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +135
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate
above
25
o
C
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/
o
C
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
2N4416
Hermetic TO-72
-55
o
C to +135
o
C
2N4416A
Hermetic TO-72
-55
o
C to +135
o
C
PN4416
Plastic TO-92
-55
o
C to +135
o
C
X2N4416
Sorted Chips in Carriers
-55
o
C to +135
o
C
CORPORATION
PIN CONFIGURATION
D
S
G
TO-92
TO-72
G
D
C
S
CJ1
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
I
GSS
Gate Reverse Current
-0.1
nA
V
GS
= -20V, V
DS
= 0
-0.1
A
T
A
= 150
o
C
BV
GSS
Gate-Source Breakdown Voltage
2N4416/PN4416
-30
V
I
G
= -1
A, V
DS
= 0
2N4416A
-35
V
GS(off)
Gate-Source Cutoff Voltage
2N4416/PN4416
-6
V
DS
= 15V, I
D
= 1nA
2N4416A
-2.5
-6
V
GS(f)
Gate-Source Forward Voltage
1
V
I
G
= 1mA, V
DS
= 0
I
DSS
Drain Current at Zero Gate Voltage
5
15
mA
V
DS
= 15V,
V
GS
= 0
f = 1kHz
g
fs
Common-Source Forward Transconductance
4500
7500
S
g
os
Common-Source Output Conductance
50
s
C
rss
Common-Source Reverse Transfer Capacitance (Note 1)
0.8
pF
f = 1MHz
C
iss
Common-Source Input Capacitance (Note 1)
4
pF
C
oss
Common-Source Input Capacitance (Note 1)
2
ELECTRICAL CHARACTERISTICS (Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
100MHz
400MHz
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
g
iss
Common-Source Input Conductance
100
1000
S
V
DS
= 15V, V
GS
= 0 (Note 1)
b
iss
Common-Source Input Susceptance
2500
10,000
g
oss
Common-Source Output
Conductance
75
100
b
oss
Common-Source Output Susceptance
1000
4000
g
fs
Common-Source Forward
Transconductance
4000
G
ps
Common-Source Power Gain
18
10
dB
V
DS
= 15V, I
D
= 5mA (Note 1)
NF
Noise Figure (Note 1)
2
4
V
DS
= 15V, I
D
= 5mA, R
G
= 1k
NOTE 1: For design reference only, not 100% tested.
2N4416 / 2N4416A / PN4416
CORPORATION
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