Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N190 / 3N191
FEATURES
Very High Input Impedance
High Gate Breakdown 3N190-3N191
Low Capacitance
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 1)
3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Transient Gate-Source Voltage (Note 1 and 2) . . . . . . .
125V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V
Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25
o
C. . . . . . . . . . . . . . . . . . 4.2mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
3N190-91
Hermetic TO-99
-55
o
C to +150
o
C
X3N190-91 Sorted Chips in Carriers
-55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
S2
G1
D2
D1
G2
S1
C
TO-99
2506
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
3N190/91
UNITS
TEST CONDITIONS
MIN
MAX
I
GSSR
Gate Reverse Current
10
pA
V
GS
= 40V
I
GSSF
Gate Forward Current
-10
V
GS
= -40V
-25
T
A
= +125
o
C
BV
DSS
Drain-Source Breakdown Voltage
-40
V
I
D
= -10
A
BV
SDS
Source-Drain Breakdown Voltage
-40
I
S
= -10
A, V
BD
= 0
V
GS(th)
Threshold Voltage
-2.0
-5.0
V
DS
= -15V, I
D
= -10
A
-2.0
-5.0
V
DS
= V
GS
, I
D
= -10
A
V
GS
Gate Source Voltage
-3.0
-6.5
V
DS
= -15V, I
D
= -500
A
I
DSS
Zero Gate Voltage Drain Current
-200
V
DS
= -15V
I
SDS
Source Drain Current
-400
V
SD
= -15V, V
DB
= 0
r
DS(on)
Drain-Source on Resistance
300
ohms
V
DS
= -20V, I
D
= -100
A
I
D(on)
On Drain Current
-5.0
-30.0
mA
V
DS
= -15V, V
GS
= -10V
3N190 / 3N191
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
3N190/91
UNITS
TEST CONDITIONS
MIN MAX
g
fs
Forward Transconductance (Note 3)
1500 4000
S
V
DS
= -15V, I
D
= -10mA
f = 1kHz
Y
os
Output Admittance
300
C
iss
Input Capacitance Output Shorted (Note 5)
4.5
pF
f = 1MHz
C
rss
Reverse Transfer Capacitance (Note 5)
1.0
C
oss
Output Capacitance Input Shorted (Note 5)
3.0
SWITCHING CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
t
d(on)
Turn On Delay Time
15
ns
V
DD
= -15V, I
D
= -10mA, R
G
= R
L
= 1.4k
(Note 5)
t
r
Rise Time
30
t
off
Turn Off Time
50
MATCHING CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified) 3N188 and 3N190
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
Y
fs1
/ Y
fs2
Forward Transconductance Ratio
0.85
1.0
V
DS
= -15V, I
D
= -500
A, f = 1kHz
V
GS1-2
Gate Source Threshold Voltage Differential
100
mV
V
DS
= -15V, I
D
= -500
A
V
GS1
-
2
T
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
100
V/
o
C
V
DS
= -15V, I
D
= -500
A,
T = -55
o
C to +25
o
C
V
GS1
-
2
T
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
100
V/
o
C
V
DS
= -15V, I
D
= -500
A
T = +25
o
C to +125
o
C
NOTES: 1. Per transistor.
2. Approximately doubles for every 10
o
C increase in T
A
.
3. Pulse test duration = 300
s; duty cycle
3%.
4. Measured at end points, T
A
and T
B
.
5. For design reference only, not 100% tested.
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