High-Speed Analo
N-Channel DMOS FETs
SD211 / SD213 / SD215
FEATURES
High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB
Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm
Low Feedthrough and Feedback Transients
Low Capacitance:
Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.
Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.
Built-in Protection Diode from Gate to Substrate
APPLICATIONS
SD211:
Analog Switch Driver
SD213 and SD215:
Analog Switches
High-Speed Digital Switches
Multiplexers
A to D Converters
D to A Converters
Choppers
Sample & Hold
DESCRIPTION
The Calogic SD211 is a 30V analog switch driver with built-in
protection diode from gate to substrate The SD211 is used
with SD213 and SD215 DMOS analog switches.
ORDERING INFORMATION
Part
Package
Temperature Range
SD211E
Hermetic TO-72 Package
-55
o
C to +125
o
C
XSS211
Sorted Chips in Carriers
-55
o
C to +125
o
C
SD213DE
Hermetic TO-72 Package
-55
o
C to +125
o
C
XSD213
Sorted Chips in Carriers
-55
o
C to +125
o
C
SD215DE
Hermetic TO-72 Package
-55
o
C to +125
o
C
XSD215
Sorted Chips in Carriers
-55
o
C to +125
o
C
CORPORATION
SCHEMATIC DIAGRAM (Top View)
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
1
2
3
4
GATE
DRAIN
SOURCE
BODY AND
CASE
BODY IS INTERNALLY CONNECTED
TO THE CASE
1Q-24
CD1-1
TO-72
G
D
C
S
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
SD211 / SD213 / SD215
CORPORATION
DC CHARACTERISTICS (T
A
= 25
o
C, unless otherwise specified)
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BV
DS
Drain-to-Source
30
35
V
V
GS
= V
BS
= 0V, I
D
= 10
A
10
25
10
25
20
25
V
GS
= V
BS
= -5V, I
S
= 10nA
BV
SD
Source-to Drain
10
10
20
V
GD
= V
BD
= -5V, I
D
= 10nA
BV
DB
Drain-to-Body
15
15
25
V
GB
= 0V, source OPEN, I
D
= 10nA
BV
SB
Source-to-Body
15
15
25
V
GB
= 0V, drain OPEN, I
S
= 10
A
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-Source
1
10
1
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
1
10
V
GS
= V
BS
= -5V, V
DS
= +20V
I
SD
(OFF)
Source-to-Drain
1
10
1
10
V
GS
= V
BD
= -5V, V
SD
= +10V
1
10
V
GS
= V
BD
= -5V, V
SD
= +20V
I
GBS
Gate
10
10
10
V
DB
= V
SB
= 0V, V
GS
=
40V
V
T
Threshold Voltage
0.5
1.0
2.0
0.1
1.0
2.0
0.1
1.0
2.0
V
V
DS
= V
GS
= V
T
, I
S
= 1
A, V
SB
= 0V
r
DS
(ON)
Drain-to-Source
Resistance
50
70
50
70
50
70
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
30
45
30
45
30
45
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
23
23
23
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
19
19
19
I
D
= 1.0mA, V
SB
= 0, V
GS
= +20V
17
I
D
= 1.0mA, V
SB
= 0, V
GS
= +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
Forward
Transconductance
10
15
10
15
10
15
ms
V
DS
= 10V, V
SB
= 0V,
I
D
= 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C
ISS
Gate Node
2.4
3.5
2.4
3.5
2.4
3.5
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
C
OSS
Drain Node
1.3
1.5
1.3
1.5
1.3
1.5
C
RSS
Source Node
0.3
0.5
0.3
0.5
0.3
0.5
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC CORPORATION,
237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025
PARAMETER
SD211
SD212
SD215
UNIT
V
DS
Drain-to-Source
+30
+10
+20
V
dc
V
SD
Source-to-Drain
+10
+10
+20
V
dc
V
DB
Drain-to-Body
+30
+15
+25
V
dc
V
SB
Source-to-Body
+15
+15
+25
V
dc
V
GS
Gate-to-Source
-15
+25
-15
+25
-25
+30
V
dc
V
GB
Gate-to-Body
-0.3
+25
-0.3
+25
-0.3
+30
V
dc
V
GD
Gate-to-Drain
-30
+25
-15
+25
-25
+30
V
dc
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