High-Speed Analog
N-Channel DMOS FETs
Improved On -Resistance
SD310 / SD312 / SD314
FEATURES
High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB
Low On Resistance . . . . . . . . . . . . . . . . . 15 Ohms @ 15V
Low Feedthrough and Feedback Transients
Low Capacitance:
-- Input (Gate) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4pF typ.
-- Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
-- Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3pF typ.
No Protection Diode from Gate to Substrate for very
high impedance applications
Maximum Gate Voltage . . . . . . . . . . . . . . . . . . . . . . .
40V
APPLICATIONS
SD310:
Analog Switch Driver
SD312 and SD314:
Analog Switches
High-Speed Digital Switches
Multiplexers
A to D Converters
D to A Converters
Choppers
Sample & Hold
DESCRIPTION
The Calogic SD310 is a 30V analog switch driver without a
built-in protection diode from gate to substrate for use with
SD312 and SD314 DMOS analog switches.
The SD312 is a high performance, high-speed, high-voltage,
and low resistance analog switch capable of switching
5V
signals. The maximum threshold of 2V permits simple direct
TTL an CMOS driving for small applications.
The SD314 is DMOS analog switch capable of switching
10V analog signals with all other parameters identical to
those of SD312.
All three devices are manufactured with an implanted
high-speed, high-voltage, and low resistance double-diffused
MOS (DMOS) process. SD310, SD312 and SD314 devices
also have no built-in protection diode to enhance performance
in high impedance circuits. The devices are available in
4-lead hermetic TO-72 package and in die form for hybrid
applications. Custom devices based on SD310, SD312 and
SD314 can also be ordered.
ORDERING INFORMATION
Part
Package
Temperature Range
SD310DE
Hermetic TO-72 Package
-55
o
C to +125
o
C
SD312DE
Hermetic TO-72 Package
-55
o
C to +125
o
C
SD314DE
Hermetic TO-72 Package
-55
o
C to +125
o
C
XSD310
Sorted Chips in Carriers
-55
o
C to +125
o
C
XSD312
Sorted Chips in Carriers
-55
o
C to +125
o
C
XSD314
Sorted Chips in Carriers
-55
o
C to +125
o
C
CORPORATION
SCHEMATIC DIAGRAM (Top View)
SOURCE
BODY
AND
CASE
GATE
DRAIN
Body is internally connected to the case
1
2
3
4
CD10-2
TO-72
G
D
C
S
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25
o
C Case Temperature . . . 1.2W
Storage Temperature Range . . . . . . . . . . . . . . -65
o
to +200
o
C
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
PARAMETER
SD310
SD312
SD314
UNIT
V
DS
Drain-to-source
+30
+10
+20
V
dc
V
SD
Source-to-drain*
+10
+10
+20
V
dc
V
DB
Drain-to-body
+30
+15
+25
V
dc
V
SB
Source-to-body
+15
+15
+25
V
dc
V
GS
Gate-to-source
40
40
40
V
dc
V
GB
Gate-to-body
40
40
40
V
dc
V
GD
Gate-to-drain
40
40
40
V
dc
SD310 / SD312 / SD314
CORPORATION
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BV
DS
Drain-to-source
30
35
V
V
GS
= V
BS
= 0V, I
D
= 10
A
10
25
10
25
20
25
V
GS
= V
BS
= -5V, I
S
= 10nA
BV
SD
Source-to drain
10
10
20
V
GD
= V
BD
= -5V, I
D
= 10nA
BV
DB
Drain-to-body
15
15
25
V
GB
= 0V, source OPEN, I
D
= 10nA
BV
SB
Source-to-body
15
15
25
V
GB
= 0V, drain OPEN, I
S
= 10
A
LEAKAGE CURRENT
I
DS
(OFF)
Drain-to-source
1
10
1
10
nA
V
GS
= V
BS
= -5V, V
DS
= +10V
1
10
V
GS
= V
BS
= -5V, V
DS
= +20V
I
SD
(OFF)
Source-to-drain
1
10
1
10
V
GS
= V
BD
= -5V, V
SD
= +10V
1
10
V
GS
= V
BD
= -5V, V
SD
= +20V
I
GBS
Gate
0.1
0.1
0.1
V
DB
= V
SB
= 0V, V
GS
=
40V
V
T
Threshold voltage
0.5
1.0
2.0
0.5
1.0
2.0
0.5
1.0
2.0
V
V
DS
= V
GS
= V
T
, I
S
= 1
A, V
SB
= 0V
r
DS
(ON)
Drain-to-source
resistance
30
50
30
50
30
50
I
D
= 1.0mA, V
SB
= 0, V
GS
= +5V
20
35
20
35
20
35
I
D
= 1.0mA, V
SB
= 0, V
GS
= +10V
15
25
15
15
I
D
= 1.0mA, V
SB
= 0, V
GS
= +15V
SYMBOL
PARAMETER
SD310
SD312
SD314
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
Forward
transconductance
15
20
15
20
15
20
mmhos
V
DS
= 10V, V
SB
= 0V, I
D
= 20mA,
f = 1kHz
SMALL SIGNAL CAPACITANCES (See capacitance model)
C
(GS+GD+GB)
Gate node
2.4
3.7
2.4
3.7
2.4
3.7
pF
V
DS
= 10V, f = 1MHz
V
GS
= V
BS
= -15V
C
(GD+DB)
Drain node
1.3
1.7
1.3
1.7
1.3
1.7
C
(GS+SB)
Source node
3.5
4.5
3.5
4.5
3.5
4.5
C
DG
Reverse transfer
0.3
0.7
0.3
0.7
0.3
0.7
AC ELECTRICAL CHARACTERISTICS
DC ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C, unless other specified.)
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