High Speed DMOS
N-Channel Switch
SD404
FEATURES
High Speed Switching. . . . . . . . . . . . . . . . . . . . . t
r
< 2ns
Low Capacitance . . . . . . . . . . . . . . . . . . c
rss
1.2pF typical
Very Low on Resistance . . . . . . . . . . . . . . . . . 8 ohm max
Low Threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 1.5V
CMOS and TTL Compatible Input
Available in Surface Mount Package
APPLICATIONS
Switch Drivers
Video Switches
VHF/UHF Amplifiers
DESCRIPTION
The SD404 is an N-Channel Enhancement Mode device
processed with Calogic's ultra high speed lateral DMOS
technology. The SD404 is an excellent switch driver or analog
switch. Its low threshold offers the designer an advantage in
applying the benefits of low on resistance and high speed
switching to low voltage circuits.
ORDERING INFORMATION
Part
Package
Temperature Range
SD404BD Plastic TO-92 Package
-55
o
C to +125
o
C
SD404CY SOT-89 Surface Mount
-55
o
C to +125
o
C
XSD404
Sorted Chips in Carriers
-55
o
C to +125
o
C
PIN CONFIGURATION
CORPORATION
D
S G
TO-92
G
D
SOT-89
S (TAB)
SCHEMATIC DIAGRAM
CD3
SOURCE
(1)
GATE
(3)
DRAIN
(2)
PRODUCT MARKING
TO-92
SD4040B
SOT-89
SD404
SD404
CORPORATION
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
o
C unless otherwise noted)
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
+20V
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
+20V
Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V
Peak Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . +0.8A
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (at or below T
A
= +25
o
C) . . . . . . . . 300mW
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . 3.0mW/
o
C
Operating Junction and Storage
Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
ELECTRICAL CHARACTERISTICS (T
A
= +25
o
C unless otherwise specified)
SYMBOL
CHARACTERISTICS
MIN
TYP
MAX
UNIT
TEST CONDITIONS
STATIC
BV
DSS
Drain-Source
Breakdown
Voltage
20
25
V
I
D
= 1.0
A, V
GS
=0
I
D(OFF)
Drain-Source OFF Leakage Current
1.0
A
V
DS
= 15V, V
GS
= 0
I
GSS
Gate-Source Leakage Current
10
A
V
GS
= 20V, V
DS
= 0
I
D(ON)
Drain-Source ON Current
0.8
1.2
A
V
DS
= 10V, V
GS
= 10 V (Note 1)
V
GS(th)
Gate-Source Threshold Voltage
0.5
1.1
1.5
V
I
D
= 1.0
A, V
DS
= V
GS
V
DS(ON)
Drain-Source ON Voltage
200
mV
I
D
= 10mA
V
GS
= 2.4V
(Note 1)
r
DS(ON)
Drain-Source ON Resistance
20
ohms
V
DS(ON)
Drain-Source ON Voltage
800
mV
I
D
= 100mA
V
GS
= 4.5V
r
DS(ON)
Drain-Source ON Resistance
8.0
ohms
DYNAMIC
gfs
Common-Source Forward Transconductance
100
mS
I
D
= 0.3A V
DS
= 20V
f = 1KHz
(Note 1)
c
iss
Common-Source Input Capacitance
12
18
pf
V
DS
= 20V, V
GS
= 0
f = 1MHz
c
oss
Common-Source Output Capacitance
6.0
8.0
c
rss
Common-Source Reverse Transfer Capacitance
1.2
2.0
td(on)
Turn ON Delay Time
1.0
1.5
ns
V
DD
= 10V, R
L
= 390
V
G(ON)
= 10V, R
G
= 51
C
L
= 1.5pF
t
r
Rise Time
1.0
2.0
t
(OFF)
Turn OFF Time
1.0
Note 1: Pulse Test, 80
Sec, 1% Duty Cycle
SWITCHING TIMES TEST CIRCUIT
TEST WAVEFORMS
V
DD
R
L
V
OUT
R
G
510
51
V
G
OSCILLOSCOPE
<
_
r
in
in
r
INPUT PULSE
t 0.5 nSEC
PULSE WIDTH - 100 nSEC
SAMPLING OSCILLOSCOPE
t < 0.36 nSEC
R > 1M
C < 2.0 pF
V
10%
0
t
V
0V
G(on)
d(on)
on
r
~
~
t
t
DD
V
V
out
in
90%
90%
10%
t
t
t
off
fall
d(off)
90%
10%
SD404
CORPORATION
GS
0
2.0
4.0
6.0
8.0
10
GS
D
DS
DRAIN-SOURCE ON RESISTANCE
-VS-
GATE-SOURCE VOLTAGE
0
I -Drain Current-(mA)
D
fs
g -
F
or
w
a
r
d
T
r
ans
c
onduc
tanc
e-
(
mmhos
)
175
150
125
100
75
50
25
50
100
150
200
250
300
350
V -Gate-Source Voltage (Volts)
0
CAPACITANCES
-VS-
DRAIN-SOURCE VOLTAGE
20
16
12
8.0
4.0
5.0
10
15
20
25
GS
V -Drain-Source Voltage (Volts)
DS
C
a
pa
c
i
t
a
nc
e
(
p
F
)
D
I = 10mA
I = 100mA
12
14
35
30
25
20
15
10
5.0
DS
(
o
n
)
r
O
N
R
e
sist
a
n
ce
(
O
h
m
s)
V -Gate- Source Voltage (Volts)
PULSE TEST
80 Sec
1% Duty Cycle
D(
o
n
)
I
-
O
N Dr
a
i
n
C
u
r
r
e
nt
(
A
mp
s
)
6.0
4.0
2.0
1.0
0.4
0.6
0.1
2.0
4.0
6.0
8.0
10
12
14
0
DS
V = 10V
PULSE TEST
80 Sec
1% Duty Cycle
D'Z'
I 40mA
T = +125 C
o
A
T = +25 C
o
A
V = 20V
f = 1KHz
PULSE TEST
80 Sec
1% Duty Cycle
V = 0
f = 1MHz
c
c
c
iss
oss
rss
10.0
0.2
0.06
0.04
0.02
0.01
ON DRAIN CURRENT
-VS-
GATE-SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE
-VS-
ON DRAIN CURRENT
TYPICAL PERFORMANCE CHARACTERISTICS (T
A
= +25
o
C unless otherwise noted)
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