J/SST201 Series
Siliconix
P-37995--Rev. D, 11-Aug-94
1
N-Channel JFETs
J201
SST201
J202
SST202
J204
SST204
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
J/SST201
0.3 to 1.5
40
0.5
0.2
J/SST202
0.8 to 4
40
1
0.9
J/SST204
0.3 to 2
25
0.5
0.2
Features
Benefits
Applications
D Low Cutoff Voltage: J201 <1.5 V
D High Input Impedance
D Very Low Noise
D High Gain: A
V
= 80 @ 20
mA
D Full Performance from Low Voltage
Power Supply: Down to 1.5 V
D Low Signal Loss/System Error
D High System Sensitivity
D High Quality Low-Level Signal
Amplification
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
Description
The J/SST201 series features low leakage, very low noise, and
low cutoff voltage for use with low-level power supplies. The
J/SST201 is excellent for battery powered equipment and low
current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
TO-226AA
(TO-92)
Top View
J201
J202
J204
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70233.
Applications information may also be obtained via FaxBack, request document #70595 and document #70599.
J/SST201 Series
2
Siliconix
P-37995--Rev. D, 11-Aug-94
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
40
V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 sec.)
300
_C
. . . . . . . . . . . . . . .
Storage Temperature
55 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150
_C
. . . . . . . . . . . . . . . . . . . .
Power Dissipation
a
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.8 mW/
_C above 25_C
Specifications
a
Limits
J/SST201
J/SST202
J/SST204
d
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= 1
mA , V
DS
= 0 V
40
40
25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 15 V, I
D
= 10 nA
0.3
1.5
0.8
4
0.3
2
Saturation Drain Current
c
I
DSS
V
DS
= 15 V, V
GS
= 0 V
0.2
1
0.9
4.5
0.2
3
mA
Gate Reverse Current
I
GSS
V
GS
= 20 V, V
DS
= 0 V
2
100
100
100
pA
Gate Reverse Current
I
GSS
T
A
= 125
_C
1
nA
Gate Operating Current
I
G
V
DG
= 10 V, I
D
= 0.1 mA
2
pA
Drain Cutoff Current
I
D(off)
V
DS
= 15 V, V
GS
= 5 V
2
pA
Gate-Source Forward Voltage
V
GS(F)
I
G
= 1 mA , V
DS
= 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
0.5
1
0.5
mS
Common-Source
Input Capacitance
C
iss
V
DS
= 15 V, V
GS
= 0 V
f
1 MH
4.5
pF
Common-Source
Reverse Transfer Capacitance
C
rss
DS
,
GS
f = 1 MHz
1.3
pF
Equivalent Input Noise Voltage
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
6
nV
/
Hz
Notes
a.
T
A
= 25
_C unless otherwise noted.
NPA
b.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NH
c.
Pulse test: PW
v300 ms duty cycle v3%.
d.
See 2N/SST5484 Series for J204 typical characteristic curves.
J/SST201 Series
Siliconix
P-37995--Rev. D, 11-Aug-94
3
Typical Characteristics (25
_C Unless Noted)
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
0
15
30
Gate Leakage Current
V
DG
Drain-Gate Voltage (V)
Gate Leakage (A)
I
G
I
GSS
@ 125
_C
I
GSS
@ 25
_C
T
A
= 125
_C
T
A
= 25
_C
I
D
= 100
mA
I
D
= 500
mA
I
G
@ I
D
= 500
mA
I
D
= 100
mA
10
0
8
6
4
2
0
5
4
3
2
1
5
4
1
3
2
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
V
GS(off)
Gate-Source Cutoff Voltage (V)
Saturation Drain Current (mA)
I
DSS
g
fs
Forward
T
ransconductance
(mS)
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
g
fs
I
DSS
1500
0
3
5
4
2
1
1200
900
600
300
0
0.01
0.1
1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
0
12
16
4
20
360
160
80
0
2
0
12
16
8
4
20
1.6
1.2
0.8
0.4
0
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
Output Characteristics
I
D
Drain Current (mA)
V
GS(off)
Gate-Source Cutoff Voltage (V)
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
g
fs
Forward
T
ransconductance
(mS)
Drain Current (
I
D
Drain Current (mA)
I
D
T
A
= 55
_C
125
_C
0.2 V
0.4 V
V
GS
= 0 V
0.6 V
0.9 V
0.1 V
0.3 V
r
DS
@ I
D
= 100
mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
r
DS
g
os
0.3 V
6
1.2
240
8
V
GS(off)
= 1.5 V
V
GS(off)
= 0.7 V
m
A)
25
_C
0.5 V
1.2 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 1.5 V
V
GS
= 0 V
S)
g
os
Output Conductance (
m
r
DS(on)
Drain-Source On-Resistance (
)
W
J/SST201 Series
4
Siliconix
P-37995--Rev. D, 11-Aug-94
Typical Characteristics (25
_C Unless Noted)
2
0
1.2
1.6
2
0.8
0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
Drain Current (mA)
I
D
T
A
= 55
_C
125
_C
25
_C
V
DS
= 10 V
V
GS(off)
= 1.5 V
500
0
0.3
0.2
0.1
0.4
0.5
400
300
200
100
0
Transfer Characteristics
V
GS
Gate-Source Voltage (V)
T
A
= 55
_C
125
_C
25
_C
V
DS
= 10 V
V
GS(off)
= 0.7 V
Drain Current (
I
D
m
A)
0.1
1
0.01
4
1.2
2
1.6
0.8
0.4
0
3.2
2.4
1.6
0.8
0
0.01
0.1
1
200
160
120
80
40
0
2000
1600
1200
800
400
0
A
V
V
oltage
Gain
I
D
Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
Transconductance vs. Gate-Source Voltage
T
A
= 55
_C
125
_C
g
fs
Forward
T
ransconductance
(mS)
V
GS
Gate-Source Voltage (V)
On-Resistance vs. Drain Current
I
D
Drain Current (mA)
25
_C
V
GS(off)
= 0.7 V
1.5 V
V
GS(off)
= 0.7 V
1.5 V
1.5
0
0.3
0.4
0.2
0.1
0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
T
A
= 55
_C
125
_C
g
fs
Forward
T
ransconductance
(mS)
V
GS
Gate-Source Voltage (V)
25
_C
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 0.7 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 1.5 V
A
V
+
g
fs
R
L
1
) R
L
g
os
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
r
DS(on)
Drain-Source On-Resistance (
)
W
J/SST201 Series
Siliconix
P-37995--Rev. D, 11-Aug-94
5
Typical Characteristics (25
_C Unless Noted)
10
0
12
16
20
8
4
8
6
4
2
0
5
0
12
20
16
8
4
4
3
2
1
0
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
Reverse Feedback Capacitance (pF)
C
rss
V
GS
Gate-Source Voltage (V)
V
DS
= 0 V
10 V
f = 1 MHz
V
GS
Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Input Capacitance (pF)
C
iss
V
DS
= 0 V
10 V
f = 1 MHz
10
100
1 k
100 k
10 k
20
16
12
8
4
0
Output Conductance vs. Drain Current
I
D
Drain Current (mA)
T
A
= 55
_C
125
_C
Equivalent Input Noise Voltage vs. Frequency
f Frequency (Hz)
V
DS
= 10 V
I
D
@ 100
mA
V
GS
= 0 V
3
2.4
1.8
0.8
0.4
0
0.01
0.1
1
25
_C
Output Characteristics
300
0
0.5
240
180
120
60
0
V
DS
Drain-Source Voltage (V)
0.1
0.2
0.3
0.4
Drain Current (mA)
I
D
Output Characteristics
1.0
0
1.0
0.8
0.6
0.4
0.2
0
V
DS
Drain-Source Voltage (V)
0.2
0.4
0.6
0.8
V
GS(off)
= 0.7 V
V
GS
= 0 V
0.1
0.2
0.3
0.4
0.5
V
GS(off)
= 1.5 V
V
GS
= 0 V
0.3
0.6
0.9
1.2
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= 1.5 V
S)
g
os
Output Conductance (
m
Drain Current (
I
D
m
A)
nV
e
n
/
Hz
)
(
Noise
V
oltage
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