SD211DE/SST211 Series
SD211DE/SST211 Series
Siliconix
S-51850--Rev. F, 14-Apr-97
1
N-Channel Lateral DMOS FETs
SD211DE
SD213DE
SD215DE
SST211
SST213
SST215
Product Summary
Part Number
V
(BR)DS
Min (V)
V
GS(th)
Max (V)
r
DS(on)
Max (
W)
C
rss
Max (pF)
t
ON
Max (ns)
SD211DE
30
1.5
45 @ V
GS
= 10 V
0.5
2
SD213DE
10
1.5
45 @ V
GS
= 10 V
0.5
2
SD215DE
20
1.5
45 @ V
GS
= 10 V
0.5
2
SST211
30
1.5
50 @ V
GS
= 10 V
0.5
2
SST213
10
1.5
50 @ V
GS
= 10 V
0.5
2
SST215
20
1.5
50 @ V
GS
= 10 V
0.5
2
Features
Benefits
Applications
D Ultra-High Speed Switching--t
ON
: 1 ns
D Ultra-Low Reverse Capacitance: 0.2 pF
D Low Guaranteed r
DS
@ 5 V
D Low Turn-On Threshold Voltage
D N-Channel Enhancement Mode
D High Speed System Performance
D Low Insertion Loss at High Frequencies
D Low Transfer Signal Loss
D Simple Driver Requirement
D Single Supply Operation
D Fast Analog Switch
D Fast Sample-and-Holds
D Pixel-Rate Switching
D DAC Deglitchers
D High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement-
mode MOSFETs designed for high speed low-glitch
switching in audio, video, and high-frequency
applications. The SD211 may be used for
"5-V analog
switching or as a high speed driver of the SD214. The
SD214 is normally used for
"10-V analog switching.
These MOSFETs utilize lateral construction to achieve
low capacitance and ultra-fast switching speeds. An
integrated Zener diode provides ESD protection. These
devices feature a poly-silicon gate for manufacturing
reliability.
For similar products see: quad array--SD5000/5400
series and non-Zener protection--SD210DE/214DE.
Top View
SD211DE, SD213DE, SD215DE
Top View
SST211 (D1)*, SST213 (D3)*, SST215 (D5)*
TO 253
(SOT 143)
S
D
2
3
1
G
4
*Marking Code for TO 253
G
S
D
TO-206AF
(TO-72)
Body
Substrate
(Case)
1
2
3
4
Body Substrate
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295.
Applications information may also be obtained via FaxBack, request document #70607.
SD211DE/SST211 Series
2
Siliconix
S-51850--Rev. F, 14-Apr-97
Absolute Maximum Ratings (T
A
= 25
_C Unless Otherwise Noted)
Gate Drain, Gate Source Voltage (SD211DE/SST211) -30/25 V
(SD213DE/SST213) -15/25 V
(SD215DE/SST215) -25/30 V
Gate Substrate Voltage
a
(SD211DE/SST211)
-0.3/25 V
. . . . . . . .
(SD213DE/SST213)
-0.3/25 V
. . . . . . .
(SD215DE/SST215)
-0.3/30 V
. . . . . . .
Drain Source Voltage
(SD211DE/SST211)
30 V
. . . . . . . . . . . .
(SD213DE/SST213)
10 V
. . . . . . . . . . .
(SD215DE/SST215)
20 V
. . . . . . . . . . .
Source Drain Voltage
(SD211DE/SST211)
10 V
. . . . . . . . . . . .
(SD213DE/SST213)
10 V
. . . . . . . . . . .
(SD215DE/SST215)
20 V
. . . . . . . . . . .
Drain Substrate Voltage (SD211DE/SST211)
30 V
. . . . . . . . . . . .
(SD213DE/SST213)
15 V
. . . . . . . . . . .
(SD215DE/SST215)
25 V
. . . . . . . . . . .
Source Substrate Voltage (SD211DE/SST211)
15
V
. . . . . . . . . . . .
(SD213DE/SST213)
15 V
. . . . . . . . . . .
(SD215DE/SST215)
25 V
. . . . . . . . . . .
Drain Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
" from case for 10 seconds)
300
_C
. . . . . . . . .
Storage Temperature
65 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 125
_C
. . . . . . . . . . . . . . . . . .
Power Dissipation
a
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Derate 3 mW/
_C above 25_C
Specifications
a
Limits
211
Series
213 Series
215 Series
Parameter
Symbol
b
Test Conditions
b
Typ
c
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source
B
kd
V l
V
(BR)DS
V
GS
= V
BS
= 0 V, I
D
= 10
mA
35
30
Breakdown Voltage
V
(BR)DS
V
GS
= V
BS
= 5 V, I
D
= 10 nA
30
10
10
20
Source-Drain
Breakdown Voltage
V
(BR)SD
V
GD
= V
BD
= 5 V, I
S
= 10 nA
22
10
10
20
V
Drain-Substrate
Breakdown Voltage
V
(BR)DBO
V
GB
= 0 V, I
D
= 10 nA
,
Source Open
35
15
15
25
V
Source-Substrate
Breakdown Voltage
V
(BR)SBO
V
GB
= 0 V, I
S
= 10
mA
,
Drain Open
35
15
15
25
Drain-Source
L k
I
DS(off)
V
GS
= V
BS
= 5 V
V
DS
= 10 V
0.4
10
10
Leakage
I
DS(off)
V
GS
= V
BS
= 5 V
V
DS
= 20 V
0.9
10
Source-Drain
L k
I
SD(off)
V
GD
= V
BD
= 5 V
V
SD
= 10 V
0.5
10
10
nA
Leakage
I
SD(off)
V
GD
= V
BD
= 5 V
V
SD
= 20 V
1
10
Gate Leakage
I
GBS
V
DB
= V
SB
= 0 V, V
GB
= 30V
0.01
100
100
100
Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1
mA
V
SB
= 0 V
0.8
0.5
1.5
0.1
1.5
0.1
1.5
V
V
GS
= 5 V
(SD Series)
58
70
70
70
W
V
GS
= 5 V
(SST
Series)
60
75
75
75
W
Drain-Source
On Resistance
r
DS(on)
V
SB
= 0 V
I
D
=
1 mA
V
GS
= 10 V
(SD Series)
38
45
45
45
W
On-Resistance
r
DS(on)
I
D
=
1 mA
V
GS
= 10 V
(SST
Series)
40
50
50
50
W
V
GS
= 15 V
30
V
GS
= 20 V
26
V
GS
= 25 V
24
SD211DE/SST211 Series
Siliconix
S-51850--Rev. F, 14-Apr-97
3
Specifications
a
Limits
211
Series
213 Series
215 Series
Parameter
Symbol
b
Test Conditions
b
Typ
c
Min
Max
Min
Max
Min
Max
Unit
Dynamic
Forward
g
fs
V
DS
= 10 V
SD Series
11
10
10
10
Forward
Transconductance
g
fs
V
DS
= 10 V
V
SB
= 0 V
I
D
= 20 mA f = 1 kHz
SST Series
10.5
9
9
9
mS
Transconductance
g
os
I
D
= 20 mA, f = 1 kHz
All
0.9
Gate Node
Capacitance
C
(GS+GD+GB)
2.5
3.5
3.5
3.5
Drain Node
Capacitance
C
(GD+DB)
V
DS
= 10 V
f = 1 MHz
SD Series
1.1
1.5
1.5
1.5
pF
Source Node
C
i
C
(GS+SB)
f = 1 MHz
V
GS
= V
BS
= 15 V
3.7
5.5
5.5
5.5
pF
Capacitance
C
(GS+SB)
V
GS
V
BS
15 V
SST Series
4.2
Reverse Transfer
Capacitance
C
rss
SD Series
0.2
0.5
0.5
0.5
Switching
Turn-On Time
t
d(on)
SD S i
O l
0.5
1
1
1
Turn-On Time
t
r
SD Series Only
V
SB
= 0 V, V
IN
0 to 5 V, R
G
= 25
W
0.6
1
1
1
ns
Turn-Off Time
t
d(off)
V
SB
= 0 V, V
IN
0 to 5 V, R
G
= 25
W
V
DD
= 5 V, R
L
= 680
W
2
ns
Turn-Off Time
t
f
DD
,
L
6
Notes:
a.
T
A
= 25
_C unless otherwise noted.
DMCBA
b.
B is the body (substrate), and (BR) is breakdown.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
SD211DE/SST211 Series
4
Siliconix
S-51850--Rev. F, 14-Apr-97
Typical Characteristics
Leakage Current vs. Applied Voltage
On-Resistance vs. Temperature
Threshold Voltage vs. Temperature
On-Resistance vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
Applied Voltage (V)
0
20
I
SBO
I
GSS (Diode)
I
D (off)
@ V
GS
= V
BG
= 5 V
I
S(off)
@ V
GD
= V
BD
= 5V
I
SBO
@ V
GB
= 0 V, Drain Open
10 nA
1 nA
100 pA
10 pA
1 pA
I
S(off)
Leakage
300
0
4
8
12
20
240
180
60
0
16
120
5 V
10 V
V
GS
= 4 V
1
100
20
16
12
8
4
0
10
25
_C
V
DS
= 15 V
V
BS
= 0 V
T
A
= 55
_C
125
_C
100
60
60
20
20
100
140
80
60
40
20
0
10 V
15 V
20 V
r
DS(on)
Drain-Source On-Resistance (
5
60
60
100
20
20
140
4
3
2
1
0
5 V
1 V
0 V
V
GS
= V
DS
= V
TH
I
D
= 1
mA
V
BS
= 10 V
I
D
= 5 mA, V
BS
= 0 V
4
8
12
16
T
A
Temperature (
_C)
T
A
Temperature (
_C)
I
D
Drain Current (mA)
g
fs
Forward
T
ransconductance
(mS)
r
DS(on)
Drain-Source On-Resistance (
V
GS
= 5 V
Output Conductance vs. Drain Current
1.0
0
20
4
0.8
0.6
0.4
0.2
0
V
DS
= 5 V
15 V
V
BS
= 0 V
f = 1 kHz
I
D
Drain Current (mA)
g
os
8
12
16
Output Conductance (mS)
Gate-Source
Threshold
V
oltage (V)
V
GS(th)
V
SB
Body-Source Voltage (V)
I
D(off)
10 V
0.5 V
)
W
)
W
SD211DE/SST211 Series
Siliconix
S-51850--Rev. F, 14-Apr-97
5
Typical Characteristics (Cont'd)
Threshold Voltage vs. Substrate-Source Voltage
Leakage Current vs. Temperature
Input Admittance
Forward Admittance
Capacitance vs. Gate-Source Voltage
Body Leakage Current vs. Drain-Body Voltage
5
0
4
20
4
3
2
1
0
H
L
V
GS
= V
DS
= V
TH
I
D
= 1 mA
T
A
= 25
_C
100
10
1
25
50
75
100
125
I
SBO
I
D(off)
I
S(off)
I
GSS
(Diode)
Leakage (nA)
10
0
4
20
8
6
4
2
0
V
DS
= 10 V, f = 1 MHz
V
GS
= V
BS
Capacitance (pF)
C
(GS+SB)
C
(GS+GD+GB)
C
(GD+DB)
C
(DG)
0
12
16
8
4
20
V
DB
(V)
I
D
= 13 mA
1 mA
Body Leakage
I
B
100
10
1
0.1
100
1000
b
is
g
is
(mS)
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25
_C
100
10
1
0.1
100
1000
(mS)
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25
_C
g
fs
b
fs
T
A
Temperature (
_C)
V
GS
Gate-Source Voltage (V)
f Frequency (MHz)
f Frequency (MHz)
8
12
16
8
12
16
200
500
200
500
Gate-Source
Threshold
V
oltage (V)
V
GS(th)
I
D(off)
@ V
GS
= V
BS
= 5 V, V
DS
= 10 V
I
S(off)
@ V
GD
= V
BD
= 5 V, V
SD
= 10 V
I
GSS
@ V
GS
= 10 V
I
SBO
@ V
SB
= 10 V
Drain Open
100
mA
100 nA
1 nA
100 pA
1 pA
10
mA
1
mA
10 nA
10 pA
V
BS
Body-Source Voltage (V)
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