N-Channel Enhancement-Mode
MOS Transistor
2N7002
DESCRIPTION
Calogic's 2N7002 device type is a vertical DMOS FET
transistor housed in a surface mount SOT-23 for
micro-assembly applications. The device is an excellent
choice for switching applications where breakdown (B
V
) and
low on-resistance are important.
ORDERING INFORMATION
Part
Package
Temperature Range
2N7002
Plastic SOT-23 Package
-55
o
C to +150
o
C
X2N7002
Sorted Chips in Carriers
-55
o
C to +150
o
C
CORPORATION
D
G
S
SOT-23
1
2
3
TOP VIEW
1
2
3
DRAIN
SOURCE
GATE
1
2
3
PIN CONFIGURATION
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(ON)
(
)
I
D
(A)
60
7.5
0.115
PRODUCT MARKING
2N7002
V02
CD5
9-3
2N7002
CORPORATION
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETERS
LIMITS
UNITS
TEST CONDITIONS
V
DS
Drain-Source Voltage
60
V
V
GS
Gate-Source Voltage
40
I
D
Continuous Drain Current
0.115
A
T
A
= 25
o
C
0.073
T
A
= 100
o
C
I
DM
Pulsed Drain Current
1
0.8
P
D
Power Dissipation
200
mW
T
A
= 25
o
C
80
T
A
= 100
o
C
T
J
Operating Junction Temperature Range
-55 to 150
o
C
T
stg
Storage Temperature Range
-55 to 150
T
L
Lead Temperature (1/16" from case for 10 sec.)
300
THERMAL RESISTANCE RATINGS
SYMBOL
THERMAL RESISTANCE
LIMITS
UNITS
R
thJA
Junction-to-Ambient
625
K/W
NOTE:
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS
1
SYMBOL
PARAMETER
MIN
TYP
2
MAX
UNIT
TEST CONDITIONS
STATIC
V
(BR)DSS
Drain-Source Breakdown Voltage
60
70
V
I
D
= 10
A, V
GS
= 0V
V
GS(th)
Gate-Threshold Voltage
1
1.9
2.5
V
DS
= V
GS
, I
D
= 0.25mA
I
GSS
Gate-Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
A
V
DS
= 60V, V
GS
= 0V
500
T
C
= 125
o
C
I
D(ON)
On-State Drain Current
3
500
1000
mA
V
DS
=
2V
DS(ON)
, V
GS
= 10V
r
DS(ON)
Drain-Source On-Resistance
3
5
7.5
V
GS
= 5V, I
D
= 50mA
9
13.5
T
C
= 125
o
C
2.5
7.5
V
GS
= 10V, I
D
= 0.5A
4.4
13.5
T
C
= 125
o
C
V
DS(ON)
Drain-Source On-Voltage
3
0.25
0.375
V
V
GS
= 5V, I
D
= 50mA
1.25
3.75
V
GS
= 10V, I
D
= 0.5A
2.2
6.75
T
C
= 125
o
C
4
g
FS
Forward Transconductance
3
80
170
mS
V
DS
= 10V, I
D
= 0.2A
g
OS
Common Source Output Conductance
3, 4
500
S
V
DS
= 5V, I
D
= 50mA
DYNAMIC
C
iss
Input Capacitance
16
50
pF
V
DS
= 25V, V
GS
= 0V, f = 1MHz
C
oss
Output Capacitance
4
11
25
C
rss
Reverse Transfer Capacitance
2
5
SWITCHING
t
ON
Turn-On Time
7
20
nS
V
DD
= 30V, R
L
= 150
, I
D
= 0.2A
V
GEN
= 10V, R
G
= 25
(Switching time is essentially
independent of operating temperature)
t
OFF
Turn-Off Time
7
20
NOTES: 1.
T
A
= 25
o
C unless otherwise specified.
2. For design aid only, not subject to production testing.
3. Pulse test; PW =
80
S, duty cycle
1%.
4. This parameter not registered with JEDEC.
9-4
PDF 
ZIP