FAST DMOS FET Switches
N-Channel Enhancement-Mode
SST211 / SST213 / SST215
FEATURES
High Speed Switching. . . . . . . . . . . . . . . . . . . . t
d(ON)
1ns
Low Capacitance . . . . . . . . . . . . . . . . . . . . . 2.4pF typical
Low ON Resistance . . . . . . . . . . . . . . . . . . . . 50
typycal
High Gain
Surface Mount Package
APPLICATIONS
Ultra High Speed Analog Switching
Sample and Hold
Multiplexers
High Gain Amplifiers
DESCRIPTION
Designed for audio, video and high frequency applications,
the SST211 Series is a high speed, ultra low capacitance
SPST analog switch. Utilizing Calogic's proprietary DMOS
processing the SST211 Series features an integrated zener
diode designed to protect the gate from electrical over stress.
ORDERING INFORMATION
Part
Package
Temperature Range
SST211 SOT-143
Surface
Mount
-55
o
C to +125
o
C
SST213 SOT-143
Surface
Mount
-55
o
C to +125
o
C
SST215 SOT-143
Surface
Mount
-55
o
C to +125
o
C
XSST211 Sorted Chips in Carriers
-55
o
C to +125
o
C
XSST213 Sorted Chips in Carriers
-55
o
C to +125
o
C
XSST215 Sorted Chips in Carriers
-55
o
C to +125
o
C
CORPORATION
PIN CONFIGURATION
SCHEMATIC DIAGRAM
3
2
4
1
GATE
(3)
DRAIN
(2)
BODY
(4)
SOURCE
(1)
CD1-1
PRODUCT MARKING
SST211
211
SST213
213
SST215
215
SST211 / SST213 / SST215
CORPORATION
ABSOLUTE MAXIMUM RATINGS (T
c
= +25
o
C unless otherwise noted)
Parameter
Breakdown Voltages
SST211
SST213
SST215
Unit
V
DS
+30
+10
+20
V
V
SD
+10
+10
+20
V
V
DB
+30
+15
+25
V
V
SB
+15
+15
+25
V
V
GS
-15
-15
-25
V
+25
+25
+30
V
V
GB
-0.3
-0.3
-0.3
V
+25
+25
+30
V
V
GD
-30
-15
-25
V
+25
+25
+30
V
I
D
Continous Drain Current . . . . . . . . . . . . . . . . . . . . . 50mA
T
j
Operating Junction Temperature Range . . -55 to +125
o
C
P
T
Power Dissipation (at or below Tc = +25
o
C) . . . . 360mW
T
S
Storage Temperature Range . . . . . . . . . . . -55 to +150
o
C
Linear Derating Factor3.6mW/
o
ELECTRICAL CHARACTERISTICS (T
c
= +25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTICS
SST211
SST213
SST215
UNIT
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
STATIC
B
VDS
Drain-Source
Breakdown Voltage
30
35
V
I
D
= 10
A, V
GS
= V
BS
= 0
10
25
10
25
20
25
I
D
= 10nA, V
GS
= V
BS
= -5V
B
VSD
Source-Drain Breakdown Voltage
10
10
20
I
S
= 10nA, V
GD
= V
BD
= -5V
B
VDB
Drain-Body
Breakdown Voltage
15
15
25
I
D
= 10nA, V
GB
= 0 Source
OPEN
B
VSB
Source-Body
Breakdown Voltage
15
15
25
I
S
= 10
A, V
GB
= 0 Drain OPEN
I
D(OFF)
Drain-Source
OFF Current
0.2
10
0.2
10
nA
V
DS
= 10V
V
GS
= V
BS
= -5V
0.2
10
V
DS
= 20V
I
S(OFF)
Source-Drain
OFF Current
0.6
10
0.6
10
V
SD
= 10V
V
GD
= V
BD
= -5V
0.6
10
V
SD
= 20V
I
GBS
Gate-Body
Leakage Current
10
10
A
V
GB
= 25V
V
DB
= V
SB
= 0
10
V
GB
= 30V
V
GS(th)
Gate Threshold Voltage
0.5
1.0
2.0
0.1
2.0
0.1
1.0
2.0
V
V
DS
= V
GS
, I
D
= 1
A, V
SB
= 0
r
ds(on)
Drain-Source
1
ON Resistance
50
70
50
70
50
70
ohms
V
GS
= 5V
I
D
= 1mA
V
SB
= 0
30
45
30
45
30
45
V
GS
= 10V
DYNAMIC
g
fs
Common-Source
1
Foward Transcond.
10
12
10
12
10
12
mS
V
DS
= 10V, I
D
= 20mA
f = 1KHz, V
SB
= 0
C
(gs + gd + gb)
Gate Node Capacitance
2.4
3.5
2.4
3.5
2.4
3.5
pF
V
DS
= 10V
V
GS
= V
BS
= -15V
f = 1MHz
C
(gd + db)
Drain Node Capacitance
1.3
1.5
1.3
1.5
1.3
1.5
C
(gs + sb)
Source Node Capacitance
3.5
4.0
3.5
4.0
3.5
4.0
C
(dg)
Reverse Transfer Capacitance
0.3
0.5
0.3
0.5
0.3
0.5
t
d(ON)
Turn ON Delay Time
0.7
1.0
0.7
1.0
0.7
1.0
ns
V
DD
= 5V, V
G(ON)
= 10V
R
L
= 680, R
G
= 51
t
r
Rise Time
0.8
1.0
0.8
1.0
0.8
1.0
t
(OFF)
Turn OFF Time
10
10
10
NOTE 1: Pulse Test, 80 Sec, 1% Duty Cycle
Typical Performance Characteristics: See SD211-215 Series
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