N-Channel JFET
High Frequency Amplifier
U308 U310
FEATURES
High Power Gain
Low Noise
Dynamic Range Greater The 100dB
Easily Matched to 75
Input
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate
above
25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 4mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
U308-10
Hermetic TO-52
-55
o
C to +150
o
C
XU308-10
Sorted Chips in Carriers
-55
o
C to +150
o
C
CORPORATION
PIN CONFIGURATION
D
S
(TO-52)
G, C
5021
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
U308
U309
U310
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
I
GSS
Gate Reverse Current
-150
-150
-150
pA
V
GS
= -15V
-150
-150
-150
nA
V
GS
= 0
T
A
= 125
o
C
BV
GSS
Gate-Source Breakdown Voltage
-25
-25
-25
V
I
G
= -1
A, V
DS
= 0
V
GS(off)
Gate-Source Cutoff Voltage
-1.0
-6.0
-1.0
-4.0
-2.5
-6.0
V
DS
= 10V, I
D
= 1nA
I
DSS
Saturation Drain Current (Note 1)
12
60
12
30
24
60
mA
V
DS
= 10V, V
GS
= 0
V
GS(f)
Gate-Source Forward Voltage
1.0
1.0
1.0
V
I
G
= 10mA, V
DS
= 0
g
fg
Common-Gate Forward
Transconductance (Note 1)
10
17
10
17
10
17
mS
V
DS
= 10V,
I
D
= 10mA
f = 1kHz
g
ogs
Common Gate Output Conductance
250
250
250
S
C
gd
Drain-Gate Capacitance
2.5
2.5
2.5
pF
V
GS
= -10V,
V
DS
= 10V
f = 1MHz
(Note 2)
C
gs
Gate-Source Capacitance
5.0
5.0
5.0
e
n
Equivalent Short Circuit
Input Noise Voltage
10
10
10
nV
Hz
V
DS
= 10V,
I
D
= 10mA
f = 100Hz
(Note 2)
U308 U310
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
U308
U309
U310
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
g
fg
Common-Gate Forward
Transconductance
15
15
15
S
V
DS
= 10V,
I
D
= 10mA
(Note 2)
f = 100MHz
14
14
14
f = 450MHz
g
ogs
Common-Gate Output
Conductance
0.18
0.18
0.18
f = 100MHz
0.32
0.32
0.32
f = 450MHz
G
pg
Common-Gate Power Gain
14
16
14
16
14
16
dB
f = 100MHz
10
11
10
11
10
11
f = 450MHz
NF
Noise Figure
1.5
2.0
1.5
2.0
1.5
2.0
f = 100MHz
2.7
3.5
2.7
3.5
2.7
3.5
f = 450MHz
NOTES: 1. Pulse test duration = 2ms.
2. For design reference only, not 100% tested.
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