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Электронный компонент: BZV55C39

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22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Power Derating: 3.33 mW / C above +50C
Forward Voltage: @ 200mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified.
MAXIMUM
MAXIMUM
TYPE
ZENER VOLTAGE
DIFFERENTIAL
REVERSE
(NOTE 1)
RESISTANCE
CURRENT
VZ @ I ZT
rdiff @ I Z
IR @ VR
VOLTS
mA
OHMS
mA
A
VOLTS
MIN
MAX
BZV55 C2V4
2.2
2.6
5
100
5
50
1
BZV55 C2V7
2.5
2.9
5
100
5
20
1
BZV55 C3V0
2.8
3.2
5
95
5
10
1
BZV55 C3V3
3.1
3.5
5
95
5
5
1
BZV55 C3V6
3.4
3.8
5
90
5
5
1
BZV55 C3V9
3.7
4.1
5
90
5
3
1
BZV55 C4V3
4.0
4.6
5
90
5
3
1
BZV55 C4V7
4.4
5.0
5
80
5
3
2
BZV55 C5V1
4.8
5.4
5
60
5
2
2
BZV55 C5V6
5.2
6.0
5
40
5
1
2
BZV55 C6V2
5.8
6.6
5
10
5
3
4
BZV55 C6V8
6.4
7.2
5
15
5
2
4
BZV55 C7V5
7.0
7.9
5
15
5
1
5
BZV55 C8V2
7.7
8.7
5
15
5
.700
5
BZV55 C9V1
8.5
9.6
5
15
5
.500
6
BZV55 C10
9.4
10.6
5
20
5
.200
7
BZV55 C11
10.4
11.6
5
20
5
.100
8
BZV55 C12
11.4
12.7
5
25
5
.100
8
BZV55 C13
12.4
14.1
5
30
5
.100
8
BZV55 C15
13.8
15.6
5
30
5
.050
10.5
BZV55 C16
15.3
17.1
5
40
5
.050
11.2
BZV55 C18
16.8
19.1
5
45
5
.050
12.6
BZV55 C20
18.8
21.2
5
55
5
.050
14.0
BZV55 C22
20.8
23.3
5
55
5
.050
15.4
BZV55 C24
22.8
25.6
5
70
5
.050
16.8
BZV55 C27
25.1
28.9
2
80
2
.050
18.9
BZV55 C30
28.0
32.0
2
80
2
.050
21.0
BZV55 C33
31.0
35.0
2
80
2
.050
23.1
BZV55 C36
34.0
38.0
2
90
2
.050
25.2
BZV55 C39
37.0
41.0
2
130
2
.050
27.3
BZV55 C43
40.0
46.0
2
150
2
.050
30.1
BZV55 C47
44.0
50.0
2
170
2
.050
32.9
BZV55 C51
48.0
54.0
2
180
2
.050
35.7
BZV55 C56
52.0
60.0
2
200
2
.050
39.2
BZV55 C62
58.0
66.0
2
215
2
.050
43.4
BZV55 C68
64.0
72.0
2
240
2
.050
47.6
BZV55 C75
70.0
79.0
2
255
2
.050
52.2
ZENER DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
DOUBLE PLUG CONSTRUCTION
METALLURGICALLY BONDED
BZV55 C2V4
thru
BZV55 C75
NOTE 1 Nominal Zener voltage is measured with the device junction in thermal
equilibrium at an ambient temperature of 25C + 3C.
MILLIMETERS INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.