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Электронный компонент: CDLL485B

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22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
GENERAL PURPOSE SILICON DIODES
METALLURGICALLY BONDED
CDLL483B
CDLL485B
CDLL486B
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
Operating Current: 200 mA
Derating: 1.2mA/C from 25C to 150C
1.0mA/C from 150C to 175C
Forward Current: 650mA
VRM
VRWM
I O
I O
I FSM
TYPE
TA = +150
C
TP=1/120 S
TA=25C
V(pk)
V(pk)
mA
mA
A
CDLL483B
80
70
200
50
2
CDLL485B
180
180
200
50
2
CDLL486B
250
225
200
50
2
VF
IR1 at VRWM
IR2 at VRM
IR3 at VRWM
TYPE
@100mA
TA=25C
TA=25C
TA = 150C
V dc
nA dc
A
A dc
CDLL483B
0.8 - 1.0
25
100
5
CDLL485B
0.8 - 1.0
25
100
5
CDLL486B
0.8 - 1.0
25
100
5
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
CDLL483B, CDLL485B
and
CDLL486B
.3
.4
.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
I F
-
Forward
Current
-

(
mA)
1000
100
10
1
0.1
150C
100C
25C
-65C
20
40
60
80
100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
I R
-
Reverse
Current
-
(
A)
1000
100
10
1
0.1
.01
.001
150C
100C
25C
-65C
NOTE :
All temperatures shown on graphs are
junction temperatures