Continental Device India Limited
Data Sheet
Page 1 of 6
2N4400, 2N4401
2N4402, 2N4403
ABSOLUTE MAXIMM RATINGS
Rating
Symbol
2N4400/01
2N4402/03
Units
Collector-Emitter Voltage
V
CEO
40
40
V
Collector-Base Voltage
V
CBO
60
40
V
Emitter-Base Voltage
V
EBO
6
5
V
Collector Current Continuous
I
C
-
600
-
mA
Power Dissipation At Ta=25 C
P
D
-
625
-
mW
Derate Above 25 C
-
5.0
-
mW/C
Power Dissipation At Tc=25 C
P
D
-
1.5
-
W
Derate Above 25 C
-
12
-
mW/C
Operating & Storage
T
j
,T
stg
-55 to +150
C
Junction Temperature Range
THERMAL RESISTANCE
Junction to Case
R
th (j-c)
-
83.3
-
C/W
Junction to Ambient
R
th (j-a)
-
200
-
C/W
ELECTRICAL CHARACTERISTICS (Ta =25 C unless otherwise specified)
2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
General Purpose Switching Applications
1 = EMITTER
2 = BASE
3 = COLLECTOR
DIM
MIN
MAX
A
4,32
5,33
B
4,45
5,20
C
3,18
4,19
D
0,41
0,55
E
0,35
0,50
F
5 DEG
G
1,14
1,40
H
1,14
1,53
K
12,70
L
1.982
2.082
ALL DIMENSIONS IN M.M.
E B
C
1 2
3
TO-92 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 6
Characteristic
Symbol
2N4400/01
2N4402/03
Unit
Collector Emitter Voltage
I
C
=1mA, I
B
=0
BV
CEO
*
>40
>40
V
Collector Base Voltage
I
C
=100A, I
E
=0
BV
CBO
>60
>40
V
Emitter Base Voltage
I
E
=100A, I
C
=0
BV
EBO
>6
>5
V
Base Cutoff Current
V
CE
=35V, V
BE
=0.4V
I
BEV
<0.1
<0.1
A
Collector Cutoff Current
V
CE
=35V, V
BE
=0.4V
I
CEX
<0.1
<0.1
A
Collector-Emitter
Saturation Voltage
I
C
=150mA, I
B
=15mA
V
CE (sat)
*
<0.4
<0.4
V
I
C
=500mA, I
B
=50mA
<0.75
<0.75
V
Base-Emitter
Saturation Voltage
I
C
=150mA, I
B
=15mA
V
BE (sat)
*
0.75 to 0.95
0.75 to 0.95
V
I
C
=500mA,I
B
=50mA
<1.2
<1.3
V
Characteristic
Symbol
2N4400 2N4401 2N4402 2N4403
Unit
D C Current Gain
I
C
=0.1mA,V
CE
=1V
h
FE
-
>20
-
>30
I
C
=1mA,V
CE
=1V
>20
>40
>30
>60
I
C
=10mA,V
CE
=1V
>40
>80
>50
>100
I
C
=150mA,V
CE
=1V*
50-150 100-300
-
-
I
C
=150mA,V
CE
=2V*
-
-
50-150 100-300
I
C
=500mA,V
CE
=2V*
>20
>40
>20
>20
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
I
C
=1mA, V
CE
=10V, f=1KHz h
fe
20-250
40-500
30-250 60-500
Input Impedance
I
C
=1mA, V
CE
=10V, f=1KHz h
ie
0.5-7.5
1.0-15 0.75-7.5
1.5-15
K
2N4400, 2N4401
2N4402, 2N4403
Continental Device India Limited
Data Sheet
Page 3 of 6
Characteristic
Symbol
2N4400 2N4401 2N4402 2N4403
Unit
Voltage Feedback Ratio
h
re
ALL
0.1-8.0
x10
4
I
C
=1mA, V
CE
=10V, f=1KHz
Output Admittance
I
C
=1mA, V
CE
=10V, f=1KHz h
oe
1.0-30
1.0-30
1.0-100 1.0-100
Collector-Base Capacitance
V
CB
=5V, I
E
=0, f=100KHz
C
cb
<6.5
<6.5
-
-
pF
V
CB
=10V, I
E
=0, f=140KHz
-
-
<8.5
<8.5
pF
Emitter-Base Capacitance
V
EB
=0.5V, I
C
=0, f=100KHz C
eb
<30
<30
-
-
pF
V
EB
=0.5V, I
C
=0, f=140KHz
-
-
<30
<30
pF
Transition Frequency
I
C
=20mA, V
CE
=10V
f
T
>200
>250
>150
>200
MHz
f=100MHz
SWITCHING CHARACTERISTICS
V
CC
=30V, V
EB
=2V,
I
C
=150mA, I
B1
=15mA
Delay time
t
d
ALL
<15
ns
Rise time
t
r
ALL
<20
ns
V
CC
=30V, I
C
=150mA,
I
B1
=I
B2
=15mA
Storage time
t
s
ALL
<225
ns
Fall time
t
f
ALL
<30
ns
*Pluse Test : Pluse width
300s, duty
2.0%.
2N4400, 2N4401
2N4402, 2N4403
Continental Device India Limited
Data Sheet
Page 4 of 6
2N4400, 2N4401
2N4402, 2N4403
DC Current Gain
h
FE
, DC Current Gain (Normalized)
I
C
Collector Current (mA)
T
J
=125C
25C
I
C
=1.0mA
10mA
100mA
500mA
T
J
=25C
DC Current Gain
V
CE
, Collector-Emitter Voltage (V)
I
B
Base Current (mA)
I
C
Collector Current (mA)
On Voltages
T
J
=25C
V
BE
@V
CE
=1.0V
V
CE(sat)
@I
C
/I
B
=10
V
CE
=1.0V
V
CE
=10V
55C
V
BE(sat)
@I
C
/I
B
=10
Voltage (V)
Continental Device India Limited
Data Sheet
Page 5 of 6
2N4400, 2N4401
2N4402, 2N4403
DC Current Gain
h
FE
, DC Current Gain (Normalized)
I
C
Collector Current (mA)
V
CE
=1.0V
V
CE
=10V
T
J
=125C
25C
55C
Collector Saturation Region
V
CE
Collector-Emitter Voltage (V)
I
B
Base Current (mA)
I
C
=1mA
100mA
500mA
I
C
Collector Current (mA)
On Voltages
T
J
=25C
V
BE(sat)
@I
C
/I
B
=10
V
BE
@V
CE
=1.0V
V
CE(sat)
@I
C
/I
B
=10
10mA
Voltage (V)
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