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Электронный компонент: CD909

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Continental Device India Limited
Data Sheet
Page 1 of 3
CD909
NPN PLASTIC POWER TRANSISTOR
Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
V
CBO
max.
100 V
Collector-emitter voltage (open base)
V
CEO
max.
90 V
Collector current
I
C
max.
12.0 A
Total power dissipation up to T
C
= 25C
P
tot
max.
75 W
Junction temperature
T
j
max.
150 C
Collector-emitter saturation voltage
I
C
= 4 A; I
B
= 0.5 A
V
CEsat
max.
1.0 V
D.C. current gain
I
C
= 1 A; V
CE
= 4 V
h
FE
min
80
max.
400
RATINGS (at T
A
=25C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
V
CBO
max.
100 V
Collector-emitter voltage (open base)
V
CEO
max.
90 V
Emitter-base voltage (open collector)
V
EBO
max.
6.0 V
Collector current
I
C
max.
12.0 A
CD909
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
D IM
M IN .
M A X.
A
l
l
di
m
i
ns
i
ons
i
n m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
D E G 7
1
2
3
4
TO-220 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 3
Total power dissipation up to T
C
= 25C
P
tot
max.
75 W
Junction temperature
T
j
max. 150 C
Storage temperature
T
stg
65 to +150 C
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
Collector cutoff current
I
E
= 0; V
CB
= 100 V
I
CBO
max. 100 A
Emitter cut-off current
I
C
= 0; V
EB
= 5V
I
EBO
max. 1000 A
Breakdown voltages
I
C
= 1 mA; I
B
= 0
V
CEO
min.
90 V
I
C
= 1 mA; I
E
= 0
V
CBO
min.
100 V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
6.0 V
Saturation voltages
I
C
= 4 A; I
B
= 0.5 A
V
CEsat
max.
1.0 V
V
BEsat
max.
1.5 V
Base emitter on voltage
I
C
= 4A; V
CE
= 4V
V
BE(on)
max.
1.5 V
D.C. current gain
I
C
= 1 A; V
CE
= 4 V
h
FE
min.
80
max. 400
I
C
= 10 A; V
CE
= 4 V
h
FE
min.
5
Transition frequency
I
C
= 0.3 A; V
CE
= 3 V
f
T
min.
3 MHz
Output capacitance
I
E
= 0; V
CB
= 10V
C
o
typ.
100 pF
Second breakdown collector current
with base forward biased (non-repetitive)
V
CE
= 21.5 V; t = 50ms
I
S/b
typ.
3.5 A
CD909
Continental Device India Limited
Data Sheet
Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com