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Электронный компонент: CMBD1202

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Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
CMBD1201, 1202, CMBD4148 are all single diodes
CMBD1203 is a dual diode, in series
CMBD1204 is a dual diode, common cathode
CMBD1205 is a dual diode, common anode
ABSOLUTE MAXIMUM RATINGS (per diode)
Continuous reverse voltage
V
R
max.
75 V
Repetitive peak reverse voltage
V
RRM
max.
100 V
Repetitive peak forward current
I
FRM
max.
500 mA
Forward current
I
F
max.
215 mA
Junction temperature
T
j
max.
150 C
Forward voltage at I
F
= 10 mA
V
F
<
0.855 V
CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
Marking
CMBD1201 24
CMBD1202 25
CMBD1203 26
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
3
1
2
CMBD1201
CMBD4148
CMBD1204 27
CMBD1205 28
CMBD4148 5H
2
1
CMBD1202
3
1
2
CMBD1203
3
1
2
3
CMBD1204
1
2
3
CMBD1205
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 3
Reverse recovery time when switched from
I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA
t
rr
<
4 ns
RATINGS (per diode) (at T
A
= 25C unless otherwise specified)
Limiting values
Continuous reverse voltage
V
R
max.
75 V
Repetitive peak reverse voltage
V
RRM
max.
100 V
Repetitive peak forward current
I
FRM
max.
500 mA
Forward current
I
F
max.
215 mA
Non-repetitive peak forward current (per crystal)
t = 1 s
I
FSM
max.
4 A
t = 1 ms
I
FSM
max.
1.0 A
t = 1 s
I
FSM
max.
0.5 A
Storage temperature
Tstg
55 to +150 C
Junction temperature
Tj
max.
150 C
THERMAL RESISTANCE
From junction to ambient
R
th ja
=
500 K/W
CHARACTERISTICS (per diode)
T
j
= 25 C unless otherwise specified
Forward voltage
I
F
= 10 mA
V
F
<
0.855 V
I
F
= 200 mA
V
F
<
1.05 V
I
F
= 10 mA
CMBD4148
V
F
<
1.0 V
Reverse currents
V
R
= 20 V
I
R
<
25 nA
V
R
= 75 V
I
R
<
5 A
V
R
= 25 V; T
j
= 150 C
I
R
<
30 A
Forward recovery voltage
I
F
= 10 mA; t
p
= 20 ns V
fr
< 1.75 V
Recovery charge
I
F
= 10 mA to V
R
= 5V; R = 100
Q
s
<
45 pC
Diode capacitance
V
R
= 0; f = 1 MHz
C
d
<
2 pF
Reverse recovery time when switched from
I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA
t
rr
<
4 ns
CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
Continental Device India Limited
Data Sheet
Page 3 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
mail@cdil.com www.cdilsemi.com