Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON EPITAXIAL TRANSISTOR
PNP transistor
Marking
CMBT3906 = 2A
ABSOLUTE MAXIMUM RATINGS
Collectorbase voltage (open emitter)
V
CB0
max.
40 V
Collectoremitter voltage (open base)
V
CE0
max.
40 V
Emitterbase voltage (open collector)
V
EB0
max.
5 V
Collector current (d.c.)
I
C
max.
200 mA
Total power dissipation up to T
amb
= 25 C
P
tot
max.
250 mW
D.C. current gain
I
C
= 10 mA; V
CE
= 1 V
h
FE
100 to 300
Transition frequency at f = 100 MHz
I
C
= 10 mA; V
CE
= 20 V
f
T
min.
250 MHz
CMBT3906
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS
Limiting values
Collectorbase voltage (open emitter)
V
CB0
max.
40 V
Collectoremitter voltage (open base)
V
CE0
max.
40 V
Emitterbase voltage (open collector)
V
EB0
max.
5 V
Collector current (d.c.)
I
C
max.
200 mA
Total power dissipation
up to T
amb
= 25 C
P
tot
max.
250 mW
Storage temperature
T
stg
55 to +150 C
THERMAL CHARACTERISTICS
T
j
= P(R
th jt
+
R
th ts
+
R
th sa
) +
T
amb
Thermal resistance
from junction to ambient
R
th ja
=
500 K/W
CHARACTERISTICS
T
amb
=
25 C unless otherwise specified
Collectoremitter breakdown voltage
I
C
= 1 mA; l
B
= 0
V
(BR)CE0
min.
40 V
Collectorbase breakdown voltage
I
C
= 10
A; I
E
= 0 V
(BR)CB0
min. 40 V
Emitterbase breakdown voltage
--I
E
= 10
A; I
C
= 0 V
(BR)EB0
min.
5 V
Collector cutoff current
V
CE
= 30 V; V
EB
= 3 V
I
CEX
max.
50 nA
Base current
with reverse biased emitter junction
I
BEX
max,
50 nA
Output capacitance at f = 100 kHz
I
E
= 0; V
CB
= 5 V
C
c
max,
4,5 pF
Input capacitance at f = 100 kHz
I
C
= 0; V
BE
= 0,5 V
C
e
max.
10 pF
Saturation voltages
I
C
= 10 mA; I
B
= 1 mA
V
CEsat
max. 0,25 V
I
C
= 50 mA; l
B
= 5 mA V
CEsat
max. 0,4 V
I
C
= 10 mA; I
B
= 1 mA
V
BEsat
max. 0,85 V
min.
0,65 V
I
C
= 50 mA; l
B
= 5 mA
V
BEsat
max. 0,95 V
D.C. current gain
I
C
= 0,1 mA; V
CE
= 1 V
h
FE
min.
60
I
C
= 1 mA; V
CE
= 1 V
h
FE
min.
80
I
C
= 10 mA; V
CE
= 1 V
h
FE
min.
100
max.
300
CMBT3906
Continental Device India Limited
Data Sheet
Page 3 of 3
I
C
= 50 mA; V
CE
= 1 V
h
FE
min.
60
I
C
= 100 mA; V
CE
= 1 V
h
FE
min.
30
Transition frequency at f = 100 MHz
I
C
= 10mA; V
CE
= 20V
f
T
min.
250 MHz
Noise figure at R
S
= 1 k
I
C
= 100
A; V
CE
= 5 V
f = 10 Hz to 15,7 kHz
F
max.
4 dB
Small Signal Current Gain
V
CE
= 10V; I
C
= 1 mA; f = 1 KHz
h
fe
min.
100
max.
400
CMBT3906
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The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
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information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
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risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
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