Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON NPN HIGHVOLTAGE TRANSISTOR
NPN transistor
Marking
CMBT5551 = G
1
ABSOLUTE MAXIMUM RATINGS
Collectorbase voltage (open emitter)
V
CBO
max.
180 V
Collectoremitter voltage (open base)
V
CEO
max.
160 V
Collector current
I
C
max.
600 mA
Total power dissipation up to T
amb
= 25 C
P
tot
max
250 mW
Junction temperature
T
j
max.
150 C
Collectoremitter saturation voltage
I
C
= 50 mA; I
B
= 5 mA
V
CEsat
max.
0.2 V
D.C. current gain
I
C
= 10 mA; V
CE
= 5 V
h
FE
min.
80
RATINGS (at T
A
= 25C unless otherwise specified)
Limiting values
Collectorbase voltage (open emitter)
V
CBO
max.
180 V
Collectoremitter voltage (open base)
V
CEO
max.
160 V
Emitterbase voltage (open collector)
V
EBO
max.
6 V
CMBT5551
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
I
C
max.
600 mA
Total power dissipation up to T
amb
= 25 C
P
tot
max
250 mW
Junction temperature
T
j
max.
150 C
Storage temperature range
T
stg
55 to +150 C
THERMAL RESISTANCE
from junction to ambient
R
th ja
500 K/W
CHARACTERISTICS (at T
A
= 25C unless otherwise specified)
Collector cutoff current
I
E
= 0; V
CB
= 120 V
I
CBO
max.
50 nA
I
E
= 0; V
CB
= 120 V; T
amb
= 100 C I
CBO
max. 50
A
Emitter cutoff current
I
C
= 0; V
EB
= 4 V
I
EBO
max.
50 nA
Breakdown voltages
I
C
= 1 mA; I
B
= 0
V
(BR)CEO
min.
160 V
I
C
= 100
A; I
E
= 0 V
(BR)CBO
min. 180 V
I
C
= 0; I
E
= 10
A
V
(BR)EBO
min.
6 V
Saturation voltages
I
C
= 10 mA; I
B
= 1 mA
V
CEsat
max.
0.15 V
V
BEsat
max.
1 V
I
C
= 50 mA; I
B
= 5 mA
V
CEsat
max.
0.2 V
V
BEsat
max.
1 V
D.C. current gain
I
C
= 1 mA; V
CE
= 5 V
h
FE
min.
80
min.
80
I
C
= 10 mA; V
CE
= 5 V
h
FE
max.
250
I
C
= 50 mA; V
CE
= 5 V
h
FE
min.
30
Smallsignal current gain
min.
50
I
C
= 1 mA; V
CE
= 10 V; f = 1 kHz
h
fe
max.
200
Output capacitance at f = 1 MHz
I
E
= 0; V
CB
= 10 V
C
o
max.
6 pF
Input capacitance at f = 1 MHz
I
C
= 0; V
EB
= 0.5 V
C
i
max.
30 pF
Transition frequency at f = 100 MHz
min.
100 MHz
I
C
= 10 mA; V
CE
= 10 V
f
T
max.
300 MHz
CMBT5551
Continental Device India Limited
Data Sheet Page 3 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemil.com
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