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Электронный компонент: CSD600K

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Continental Device India Limited
Data Sheet
Page 1 of 3
CSB631, 631K
PNP PLASTIC POWER TRANSISTORS
CSD600, 600K
NPN PLASTIC POWER TRANSISTORS
Low frequency Power Amplifier and Medium Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
631
631K
600
600K
Collector-base voltage (open emitter)
V
CBO
max. 100
120 V
Collector-emitter voltage (open base)
V
CEO
max. 100
120 V
Collector current
I
C
max.
1.0
A
Total power dissipation up to T
C
= 25C
P
C
max.
8.0
W
Junction temperature
T
j
max.
150
C
Collector-emitter saturation voltage
I
C
= 0.5 A; I
B
= 50 mA
V
CEsat
max.
0.4
V
D.C. current gain
I
C
= 50 mA; V
CE
= 5 V
h
FE
min.
60
max.
320
RATINGS (at T
A
=25C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
V
CBO
max. 100
120 V
Collector-emitter voltage (open base)
V
CEO
max. 100
120 V
CSB631, CSB631K
CSD600, CSD600K
ALL DIMENSIONS IN MM
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
3
2
TO-126 (SOT-32) Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 3
631
631K
600
600K
Emitter-base voltage (open collector)
V
EBO
max.
5.0
V
Collector current
I
C
max.
1.0
A
Collector current (peak)
I
CP
max.
2.0
mA
Total power dissipation up to T
A
= 25C
P
C
max.
1.0
W
Total power dissipation up to T
C
= 25C
P
C
max.
8.0
W
Junction temperature
T
j
max.
150
C
Storage temperature
T
stg
65 to +150
C
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
631
631K
600
600K
Collector cutoff current
I
E
= 0; V
CB
= 50 V
I
CBO
max.
1.0
A
Emitter cut-off current
I
C
= 0; V
EB
= 4 V
I
EBO
max.
1.0
A
Breakdown voltages
I
C
= 1 mA; I
B
= 0
V
CEO
min.
100
120 V
I
C
= 10 A; I
E
= 0
V
CBO
min.
100
120 V
I
E
= 10 A; I
C
= 0
V
EBO
min.
5.0
V
Saturation voltages
I
C
= 500 mA; I
B
= 50 mA
V
CEsat
max.
0.4
V
V
BEsat
max.
1.2
V
D.C. current gain
I
C
= 50 mA; V
CE
= 5 V
h
FE
*
min.
60
max.
320
I
C
= 500 mA; V
CE
= 5 V
h
FE
min.
20
Transition frequency
I
C
= 50 mA; V
CE
= 10 V
PNP
f
T
typ.
110
MHz
NPN
typ.
130
MHz
Output capacitance
V
CB
= 10 V; I
E
= 0; f = 1 MHz
PNP
C
ob
typ.
30
pF
NPN
C
ob
typ.
20
pF
* h
FE
classification: D60 - 120, E = 100 - 200, F 160 - 320
CSB631, CSB631K
CSD600, CSD600K
Continental Device India Limited
Data Sheet
Page 3 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com