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Электронный компонент: CTN635

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Continental Device India Limited
Data Sheet
Page 1 of 4
CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier.
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
1 = COLLECTOR
2 = BASE
3 = EMITTER
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS
Ratings
Ratings
Ratings
Ratings
Ratings
Symbol
Symbol
Symbol
Symbol
Symbol
CTN635
CTN635
CTN635
CTN635
CTN635 CTN637
CTN637
CTN637
CTN637
CTN637 CTN639
CTN639
CTN639
CTN639
CTN639
Units
Units
Units
Units
Units
CTN636
CTN636
CTN636
CTN636
CTN636 CTN638
CTN638
CTN638
CTN638
CTN638 CTN640
CTN640
CTN640
CTN640
CTN640
Collector-Base Voltage
V
CBO
45
60
100
V
Collector-Emitter Voltage
V
CEO
45
60
80
V
Emitter-Base Voltage
V
EBO
5
-
V
Collector Current Continuous
I
C
-
1
-
A
Peak
I
CM
-
1.5
-
A
Base Current Continuous
I
B
-
100
-
mA
Peak
I
BM
-
200
-
mA
Power Dissipation @ Ta=25C
P
D
-
750
-
mW
Derate above 25C
-
6
-
mW/C
Power Dissipation @ Tc=25C
P
D
-
2.5
-
W
Derate above 25C
-
20
-
mW/C
Operating And Storage Junction
T
j
,T
stg
55 to +150
C
Temperature Range
1 2 3
E B
C
TO-237 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 4
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta =25C unless otherwise specified)
Characteristic
Characteristic
Characteristic
Characteristic
Characteristic
Symbol
Symbol
Symbol
Symbol
Symbol
Min.
Min.
Min.
Min.
Min.
T y p .
T y p .
T y p .
T y p .
T y p .
M a x .
M a x .
M a x .
M a x .
M a x . Unit
Unit
Unit
Unit
Unit
Collector-Emitter Voltage 635, 636
635, 636
635, 636
635, 636
635, 636
BV
CEO
45
-
-
V
I
C
=10mA, I
B
=0
637, 638
637, 638
637, 638
637, 638
637, 638
60
-
-
V
639, 640
639, 640
639, 640
639, 640
639, 640
80
-
-
V
Collector-Base Voltage
635, 636
635, 636
635, 636
635, 636
635, 636
BV
CBO
45
-
-
V
I
C
=100A, I
E
=0
637, 638
637, 638
637, 638
637, 638
637, 638
60
-
-
V
639, 640
639, 640
639, 640
639, 640
639, 640
100
-
-
V
Emitter-Base Voltage
I
E
=10A, I
C
=0
BV
EBO
5
-
-
V
Collector Cutoff Current
V
CB
=30V, I
E
=0
I
CBO
-
-
100
nA
V
CB
=30V, I
E
=0, Ta=125C
-
10
A
Base Emitter On Voltage
I
C
=500mA, V
CE
=2V
V
BE(on)
*
-
-
1.0 V
Collector-Emitter
(Sat) Voltage
I
C
=500mA, I
B
=50mA
V
CE(sat)
*
-
-
0.5 V
D.C. Current Gain
I
C
=5mA, V
CE
=2V
635, 636
635, 636
635, 636
635, 636
635, 636
h
FE
25
-
-
I
C
=150mA, V
CE
=2V*
637, 638
637, 638
637, 638
637, 638
637, 638
40
-
160
639, 640
639, 640
639, 640
639, 640
639, 640
40
-
160
I
C
=500mA, V
CE
=2V*
25
-
-
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Input Capacitance
V
BE
=0.5V, I
C
=0,
NPN
NPN
NPN
NPN
NPN
C
ib
-
50
-
pF
f=1MHz
P N P
P N P
P N P
P N P
P N P
-
110
-
pF
Input Capacitance
V
CB
=10V, I
C
=0,
NPN
NPN
NPN
NPN
NPN
C
ob
-
7
-
pF
f=1MHz
P N P
P N P
P N P
P N P
P N P
-
9
-
pF
Transition Frequency
I
C
=10mA, V
CE
=5V,
NPN
NPN
NPN
NPN
NPN
f
T
-
130
-
MHz
f=35MHz
P N P
P N P
P N P
P N P
P N P
-
50
-
MHz
* Pulse Test: Pulse width
300s, Duty cycle
2%.
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
Continental Device India Limited
Data Sheet
Page 3 of 4
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
V
CE
= 2V
I
C
Collector Current (mA)
Current Gain Bandwidth Product
Current Gain Bandwidth Product
Current Gain Bandwidth Product
Current Gain Bandwidth Product
Current Gain Bandwidth Product
V
CE
= 2V
I
C
Collector Current (mA)
Saturation and On Voltages
Saturation and On Voltages
Saturation and On Voltages
Saturation and On Voltages
Saturation and On Voltages
I
C
Collector Current (mA)
V
BEon
at V
CE
= 2V
V
CEsat
at I
C
/I
B
= 10
h
FE
- Current Gain
f
T
- Current Gain Bandwidth
Product (MHz)
Voltage (v)
V
BEsat
at I
C
/I
B
= 10
Continental Device India Limited
Data Sheet
Page 4 of 4
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com