FEATURES
VERY LOW NOISE FIGURE:
0.45 dB Typical at 12 GHz
HIGH ASSOCIATED GAIN:
12.5 dB Typical at 12 GHz
L
G
0.20
m, W
G
= 200
m
LOW COST METAL CERAMIC PACKAGE
TAPE & REEL PACKAGING OPTION AVAILABLE
ULTRA LOW NOISE
PSEUDOMORPHIC HJ FET
NE32584C
DESCRIPTION
The NE32584C is a pseudomorphic Hetero-Junction FET that
uses the junction between Si-doped AlGaAs and undoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling capabilities. The
mushroom gate also results in lower noise figure and high
associated gain. This device is housed in an epoxy-sealed,
metal/ceramic package and is intended for high volume con-
sumer and industrial applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
PART NUMBER
NE32584C
PACKAGE OUTLINE
84C
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
1
Optimum Noise Figure, V
DS
= 2 V, I
DS
= 10 mA, f = 12 GHz
dB
0.45
0.55
G
A
1
Associated Gain, V
DS
= 2 V, I
DS
= 10 mA, f = 12 GHz
dB
11.0
12.5
I
DSS
Saturated Drain Current, V
DS
= 2 V,V
GS
= 0 V
mA
20
60
90
V
P
Pinch-off Voltage, V
DS
= 2 V, I
DS
= 100
A
V
-2.0
-0.7
-0.2
g
m
Transconductance, V
DS
= 2 V, I
D
= 10 mA
mS
45
60
I
GSO
Gate to Source Leakage Current, V
GS
= -3 V
A
0.5
10.0
R
TH (CH-A)
Thermal Resistance (Channel to Ambient)
C/W
750
R
TH (CH-C)
Thermal Resistance (Channel to Case)
C/W
350
Associated Gain, G
A
(dB)
Noise Figure, NF (dB)
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
Frequency, f (GHz)
California Eastern Laboratories
G
A
NF
1.2
1.0
0.8
0.6
0.4
0.2
0
2
4
6
8
10
20
30
24
21
18
15
12
9
6
NE32584C
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
V
DS
= 2 V, I
D
= 10 mA
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
4.0
V
GS
Gate to Source Voltage
V
-3.0
I
DS
Drain Current
mA
I
DSS
I
GRF
Gate Current
A
100
T
CH
Channel Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
P
T
Total Power Dissipation
mW
165
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature, T
A
(
C)
Total Power Dissipation, P
T
(mW)
Noise Figure, NF (dB)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
Noise Figure, NF (dB)
FREQ.
NF
OPT
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
2
0.29
20.0
0.86
22
0.27
4
0.30
18.3
0.76
45
0.25
6
0.33
16.5
0.69
70
0.18
8
0.36
15.0
0.63
96
0.11
10
0.40
13.6
0.59
122
0.08
12
0.45
12.5
0.54
147
0.04
14
0.54
12.0
0.48
171
0.04
16
0.68
11.8
0.40
-165
0.05
18
0.85
11.5
0.31
-144
0.06
Associated Gain, G
A
(dB)
Associated Gain, G
A
(dB)
Drain Current, I
D
(mA)
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
Drain Current, I
D
(mA)
Frequency, f (GHz)
NOISE FIGURE AND ASSOCIATED GAIN
vs. DRAIN CURRENT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
200
150
100
50
0
50
100
150
200
V
GS
= 0 V
-0.2 V
-0.4 V
-0.8 V
-0.6 V
100
80
60
40
20
0
1.5
3.0
1.0
0.5
0
1
2
4
6
8 10
14
20
30
24
20
16
12
8
4
G
A
NF
V
DS
= 2 V
I
D
= 10 mA
V
DS
= 2 V
f = 12 GHz
G
A
NF
2.0
1.5
1.0
0.5
0
10
20
30
14
13
12
11
10
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
(T
A
= 25
C)
NE32584C
V
DS
= 2 V, I
DS
= 10 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
1.001
-1.75
5.202
178.07
0.001
83.90
0.587
-1.59
-0.075
37.162
0.200
1.001
-3.60
5.189
176.33
0.003
86.02
0.585
-3.13
-0.025
32.380
0.500
0.998
-8.95
5.178
170.78
0.008
83.30
0.585
-7.50
0.047
28.111
1.000
0.989
-17.72
5.128
161.98
0.015
76.85
0.581
-14.91
0.118
25.339
2.000
0.967
-34.63
5.013
145.12
0.030
64.62
0.576
-28.90
0.188
22.230
3.000
0.943
-50.81
4.865
128.82
0.043
53.33
0.567
-42.28
0.235
20.536
4.000
0.907
-66.71
4.703
112.71
0.054
42.06
0.554
-55.03
0.312
19.400
5.000
0.857
-81.86
4.493
97.04
0.062
31.40
0.531
-66.77
0.426
18.601
6.000
0.800
-96.39
4.297
82.71
0.069
21.97
0.503
-77.55
0.541
17.943
7.000
0.755
-110.25
4.143
69.20
0.075
13.52
0.483
-87.72
0.618
17.423
8.000
0.725
-124.55
4.068
55.99
0.081
5.09
0.470
-97.81
0.646
17.009
9.000
0.683
-138.37
3.994
42.58
0.084
-3.80
0.453
-106.93
0.724
16.771
10.000
0.663
-154.60
4.017
28.11
0.089
-12.63
0.431
-116.85
0.734
16.545
11.500
0.585
178.24
3.849
6.85
0.091
-26.79
0.359
-134.35
0.900
16.263
12.000
0.565
168.24
3.790
-0.46
0.090
-31.63
0.335
-140.87
0.960
16.244
13.000
0.551
148.32
3.720
-13.97
0.090
-41.14
0.300
-157.16
1.000
16.163
14.000
0.548
129.66
3.669
-28.93
0.089
-52.52
0.281
-173.11
1.029
15.113
15.000
0.560
112.17
3.652
-44.37
0.087
-64.18
0.276
171.08
1.025
15.253
16.000
0.565
94.50
3.557
-60.11
0.085
-76.05
0.274
154.07
1.052
14.824
17.000
0.565
76.97
3.448
-74.93
0.084
-89.05
0.259
135.78
1.101
14.196
18.000
0.575
60.33
3.357
-89.44
0.082
-103.35
0.263
116.62
1.120
14.012
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Coordinates in Ohms
Frequency in GHz
(V
DS
= 2 V, I
DS
= 10 mA)
NE32584C
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
0
10
25
50
j
10
j
25
j
50
j
100
-j
10
-j
25
-j
50
-j
100
S
11
.1 GHz
S
22
20 GHz
S
22
.1 GHz
S
11
20 GHz
100
5
4
3
2
1
.1
.
06
+120
+150
180
+90
+60
+30
-120
-150
-90
-60
-30
0
S
12
.1 GHz
S
21
.1 GHz
S
12
20 GHz
S
21
20 GHz
NE32584C
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
NE32584C
V
DS
= 2 V, I
DS
= 20 mA
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Coordinates in Ohms
Frequency in GHz
(V
DS
= 2 V, I
DS
= 20 mA)
0.100
1.001
-1.81
6.552
178.03
0.001
84.76
0.509
-1.76
-0.078
38.164
0.200
1.000
-3.77
6.531
176.09
0.003
86.79
0.507
-3.19
0.011
33.379
0.500
0.997
-9.43
6.511
170.33
0.007
83.69
0.506
-7.53
0.063
29.685
1.000
0.987
-18.65
6.432
161.14
0.014
77.38
0.502
-14.91
0.134
26.622
2.000
0.958
-36.35
6.243
143.49
0.027
65.71
0.496
-28.84
0.232
23.640
3.000
0.925
-53.13
5.999
126.61
0.038
55.04
0.487
-41.96
0.303
21.983
4.000
0.879
-69.42
5.734
110.09
0.048
44.64
0.474
-54.20
0.397
20.772
5.000
0.821
-84.79
5.417
94.24
0.056
34.90
0.454
-65.25
0.519
19.856
6.000
0.757
-99.35
5.121
79.85
0.062
26.33
0.430
-75.31
0.646
19.170
7.000
0.708
-113.22
4.892
66.26
0.068
18.60
0.413
-84.85
0.723
18.570
8.000
0.674
-127.54
4.754
53.02
0.074
10.86
0.401
-94.21
0.754
18.078
9.000
0.628
-141.15
4.617
39.77
0.078
2.80
0.389
-102.27
0.826
17.723
10.000
0.605
-157.21
4.599
25.65
0.083
-5.30
0.370
-111.19
0.836
17.436
11.000
0.549
-174.62
4.503
11.83
0.086
-14.51
0.330
-121.08
0.927
17.190
12.000
0.513
165.35
4.291
-2.24
0.087
-23.36
0.283
-133.16
1.017
16.128
13.000
0.504
145.18
4.193
-15.42
0.087
-32.46
0.248
-149.27
1.052
15.439
14.000
0.504
126.44
4.123
-29.96
0.088
-43.35
0.229
-165.01
1.061
15.202
15.000
0.517
109.11
4.106
-45.03
0.087
-54.72
0.225
179.28
1.050
15.376
16.000
0.527
91.65
4.001
-60.55
0.086
-66.36
0.224
161.59
1.058
15.203
17.000
0.530
74.05
3.888
-75.22
0.085
-79.11
0.208
142.58
1.098
14.697
18.000
0.543
57.36
3.785
-89.66
0.083
-93.10
0.212
121.91
1.114
14.536
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
0
10
25
50
j
10
j
25
j
50
j
100
-j
10
-j
25
-j
50
-j
100
S
22
20 GHz
S
11
.1 GHz
S
22
.1 GHz
S
11
20 GHz
100
10
8
6
4
2
.1
.
06
.
02
+120
+150
180
+90
+60
+30
-120
-150
-90
-60
-30
0
S
21
.1 GHz
S
21
20 GHz
S
12
20 GHz
S
12
.1 GHz
SCHEMATIC
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
Parameters
Q1
Parameters
Q1
VTO
-0.6723
RG
3
VTOSC
0
RD
2
ALPHA
4
RS
2
BETA
0.115
RGMET
0
GAMMA
0.08
KF
0
GAMMADC
0.07
AF
1
Q
2
TNOM
27
DELTA
0.5
XTI
3
VBI
0.715
EG
1.43
IS
3e-13
VTOTC
0
N
1.22
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
5e-12
CDS
0.13e-12
RDB
1000
CBS
1e-9
CGSO
0.3e-12
CGDO
0.02e-12
DELTA1
0.3
DELTA2
0.1
FC
0.5
VBR
Infinity
NE32584C NONLINEAR MODEL
NE32584C
FET NONLINEAR MODEL PARAMETERS
(1)
UNITS
MODEL RANGE
Frequency:
0.1 to 18 GHz
Bias:
V
DS
= 1 V to 3 V, I
D
= 5 mA to 30 mA
Date:
3/24/97
(1) Series IV Libra TOM Model
CGD_PKG
RG_PKG
0.5 ohms
0.28nH
0.55nH
LG_PKG
CCG_PKG
RS_PKG
0.2 ohms
LS_PKG
0.095nH
0.1pF
CSG_PKG
0.01pF
SOURCE
0.14pF
LG
Q1
LD
LD_PKG
RD_PKG
CCD_PKG
CSD_PKG
0.01pF
DRAIN
0.4nH
0.3nH
0.2 ohms
0.001pF
GATE
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 84C
NE32584C
PART
AVAILABILITY
LEAD
PACKAGE
NUMBER
LENGTH
OUTLINE
NE32584C-S
Bulk up to 1K
1.0 mm
84C
NE32584C-T1
1K/Reel
1.0 mm
84C
ORDERING INFORMATION
1.78
0.2
0.5
0.1
(ALL LEADS
)
1.0
0.2 (ALL LEADS)
1.78
0.2
1.7 MAX
0.1
+0.07
-0.03
S
S
D
G
Part Number Designator (Letter).
When the letter is upright,
the gate lead is to the right.
D
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -12/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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