NE33284A
FEATURES
VERY LOW NOISE FIGURE:
0.8 dB typical at 12 GHz
HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
GATE LENGTH: 0.3
m
GATE WIDTH: 280
m
LOW COST METAL/CERAMIC PACKAGE
TAPE & REEL PACKAGING OPTION AVAILABLE
PART NUMBER
NE33284A
PACKAGE OUTLINE
84AS
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
OPT
1
Optimum Noise Figure, V
DS
= 2.0 V, I
DS
= 10 mA,
f = 12 GHz
dB
0.75
1.0
f = 4 GHz
dB
0.35
0.45
G
A
1
Associated Gain, V
DS
= 2.0 V, I
DS
= 10 mA, f = 12 GHz
dB
9.5
10.5
f = 4 GHz
dB
13.0
15.0
P
1dB
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 2.0 V, I
DS
= 10 mA
dBm
11.2
V
DS
= 2.0 V, I
DS
= 20 mA
dBm
12.0
G
1dB
Gain at P
1dB
, f = 12 GHz
V
DS
= 2.0 V, I
DS
= 10 mA
dB
10.8
V
DS
= 2.0 V, I
DS
= 20 mA
dB
11.0
I
DSS
Saturated Drain Current, V
DS
= 2.0 V,V
GS
= 0 V
mA
15
40
80
V
P
Pinch-off Voltage, V
DS
= 2.0 V, I
DS
= 0.1 mA
V
-2.0
-0.8
-0.2
g
m
Transconductance, V
DS
= 2.0 V, I
D
= 10 mA
mS
45
70
I
GSO
Gate to Source Leakage Current, V
GS
= -3.0 V
A
0.5
10.0
R
TH (CH-A)
Thermal Resistance (Channel to Ambient)
C/W
630
R
TH (CH-C)2
Thermal Resistance (Channel to Case)
C/W
280
310
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. The device features mushroom shaped
TiAl gates for decreased gate resistance and improved power
handling capabilities. The mushroom gate also results in lower
noise figure and high associated gain. This device is housed in
an epoxy-sealed, metal/ceramic package and is intended for
high volume consumer and industrial applications.
Notes:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
2. R
TH
(channel to case) for package mounted on an infinite heat sink.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
V
DS
= 2 V, I
DS
= 10 mA
Noise Figure, NF (dB)
Associated Gain, G
A
(dB)
Frequency, f (GHz)
SUPER LOW NOISE HJ FET
California Eastern Laboratories
1
10
20
0
0.2
0.4
0.6
0.8
1.2
1.4
NF
G
A
24
21
18
15
12
9
6
3
1
TRANSCONDUCTANCE vs. DRAIN CURRENT
V
DS
= 2.0 V
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
4.0
V
GS
Gate to Source Voltage
V
-3.0
I
DS
Drain Current
mA
I
DSS
I
GRF
Gate Current
A
280
P
IN
RF Input (CW)
dBm
15
T
CH
Channel Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
P
T
Total Power Dissipation
mW
165
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Drain Current, I
DS
(mA)
Note:
1.Operation in excess of any one of these conditions may result in
permanent damage.
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature, T
A
(
C)
Drain Current, I
DS
(mA)
Transconductance, g
m
(mS)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Noise Figure, NF (dB)
Drain to Source Voltage, V
DS
(V)
Drain Current, I
DS
(mA)
Total Power Dissipation, P
T
(mW)
TYPICAL NOISE PARAMETERS
(T
A
= 25
C)
V
DS
= 2 V, I
DS
= 10 mA
FREQ.
NF
OPT
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
1
0.29
21.3
0.85
28
0.48
2
0.31
18.3
0.82
40
0.27
4
0.35
15.0
0.74
62
0.16
6
0.42
13.5
0.67
85
0.13
8
0.52
12.2
0.59
107
0.10
10
0.63
11.3
0.52
130
0.09
12
0.75
10.5
0.45
168
0.10
14
0.90
9.9
0.37
-146
0.14
16
1.05
9.3
0.30
-100
0.22
18
1.25
8.8
0.22
-54
0.34
Associated Gain, G
A
(dB)
NOISE FIGURE AND GAIN
vs. DRAIN CURRENT
V
DS
= 2 V, f = 12 GHz
NE33284A
Infinite
Heat sink
0 25 50 75 100 125 150 175 200
300
250
200
150
100
50
0
Free Air
120
100
80
60
40
20
0
0
10
20
30
40
50
50
40
30
20
10
0
0
0.5
-0.1 V
-0.2 V
-0.3 V
-0.4 V
-0.5 V
1
1.5
2
2.5
3
V
GS
= 0 V
0 5 10 15 20 25 30 35 40
2
1.6
1.2
0.8
0.4
0
16
14
12
10
8
6
G
A
NF
Tuned @ 10 mA only
Tuned @ 10 mA only
Tuned @ each I
DS
Tuned @ each I
DS
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
S
21
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
(dB)
0.1
.999
-1.7
5.712
178.3
.002
89.2
.630
-1.2
0.2
.999
-4.0
5.660
176.3
.004
88.9
.630
-2.8
0.5
.998
-10.4
5.660
170.2
.011
83.5
.632
-7.0
1.0
.981
-21.3
5.604
160.0
.022
76.3
.627
-13.9
2.0
.935
-41.3
5.414
141.1
.041
65.0
.599
-26.9
3.0
.876
-60.8
5.117
123.0
.056
54.2
.564
-39.1
4.0
.809
-78.1
4.732
106.6
.071
44.7
.534
-49.8
5.0
.738
-94.7
4.382
91.7
.080
36.4
.492
-60.2
6.0
.671
-110.7
4.058
77.6
.087
29.1
.455
-69.9
7.0
.619
-125.6
3.746
64.1
.094
22.6
.430
-79.5
8.0
.578
-139.1
3.491
52.2
.100
18.4
.416
-88.6
9.0
.542
-151.7
3.289
40.1
.106
13.6
.405
-97.2
10.0
.499
-164.8
3.130
28.3
.113
7.2
.394
-106.0
11.0
.455
-179.3
2.995
16.4
.121
3.1
.377
-114.7
12.0
.431
164.4
2.855
4.7
.126
-2.3
.361
-125.2
13.0
.425
148.0
2.752
-6.8
.133
-8.1
.340
-137.0
14.0
.417
133.1
2.664
-17.9
.139
-13.5
.332
-149.2
15.0
.402
116.8
2.579
-30.2
.149
-20.8
.336
-161.8
16.0
.393
98.3
2.515
-42.7
.155
-29.0
.334
-174.8
17.0
.396
78.7
2.430
-55.5
.163
-37.4
.337
171.2
18.0
.426
61.5
2.348
-68.3
.170
-45.7
.333
156.8
19.0
.462
49.2
2.281
-80.1
.173
-56.0
.328
139.7
20.0
.491
33.8
2.208
-93.7
.176
-66.0
.320
121.8
0.05
15.1
34.6
0.02
15.1
31.5
0.04
15.1
27.1
0.14
15.0
24.1
0.25
14.7
21.2
0.36
14.2
19.6
0.47
13.5
18.2
0.59
12.8
17.4
0.70
12.2
16.7
0.79
11.5
16.0
0.85
10.9
15.4
0.90
10.3
14.9
0.96
9.9
14.4
1.00
9.5
13.7
1.04
9.1
12.3
1.04
8.8
11.9
1.04
8.5
11.5
1.03
8.2
11.4
1.03
8.0
11.1
1.01
7.7
11.0
0.99
7.4
11.4
0.96
7.2
11.2
0.96
6.9
11.0
Note:
1. Gain Calculations:
V
DS
= 2 v, I
DS
= 10 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE33284A
j100
j50
j25
j10
-j100
-j50
-j25
0
S
22
20 GHz
S
22
.1 GHz
S
11
20 GHz
S
11
.1 GHz
10
25
50
100
+90
+60
+30
+120
-150
-120
-90
-60
-30
0
S
21
20 GHz
S
21
.1 GHz
S
12
.1 GHz
S
12
20 GHz
+150
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
S
21
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
(dB)
V
DS
= 2 V, I
DS
= 20 mA
0.1
.999
-2.0
7.099
178.3
.002
89.3
.536
-1.2
0.2
.999
-4.3
7.053
175.9
.004
88.4
.536
-2.7
0.5
.995
-11.2
7.053
169.4
.010
83.2
.536
-7.0
1.0
.977
-22.7
6.935
158.7
.019
76.7
.532
-13.9
2.0
.919
-43.9
6.540
138.8
.037
67.0
.506
-26.3
3.0
.847
-63.8
6.026
120.3
.051
57.5
.473
-38.2
4.0
.769
-81.5
5.485
103.9
.064
48.6
.446
-47.9
5.0
.693
-97.9
4.991
89.0
.074
41.5
.412
-57.4
6.0
.625
-113.5
4.558
75.2
.082
35.3
.382
-66.2
7.0
.574
-128.4
4.181
61.9
.090
29.7
.360
-75.7
8.0
.533
-141.7
3.865
50.4
.099
24.7
.353
-83.9
9.0
.496
-153.9
3.614
38.7
.107
19.6
.347
-91.9
10.0
.455
-167.0
3.423
27.0
.116
13.8
.341
-100.7
11.0
.414
178.7
3.256
15.8
.126
8.2
.327
-109.0
12.0
.391
162.5
3.098
4.2
.133
2.2
.315
-119.4
13.0
.387
145.8
2.975
-7.1
.141
-4.6
.293
-131.7
14.0
.384
131.2
2.873
-17.9
.149
-10.8
.288
-144.0
15.0
.369
114.7
2.783
-29.9
.160
-18.3
.290
-156.5
16.0
.364
95.6
2.713
-42.0
.165
-27.1
.289
-170.3
17.0
.368
75.8
2.622
-54.7
.175
-35.5
.289
174.4
18.0
.400
59.4
2.529
-66.7
.181
-44.9
.286
158.9
19.0
.434
47.6
2.459
-78.7
.182
-55.1
.280
140.9
20.0
.468
32.4
2.386
-92.0
.185
-65.8
.275
122.3
0.05
17.0
35.5
0.03
17.0
32.5
0.08
17.0
28.5
0.17
16.8
25.6
0.31
16.3
22.5
0.44
15.6
20.7
0.57
14.9
19.3
0.69
14.0
18.3
0.80
13.2
17.4
0.87
12.4
16.7
0.91
11.7
15.9
0.95
11.2
15.3
0.98
10.7
14.7
1.01
10.2
13.4
1.03
9.8
12.6
1.03
9.5
12.1
1.02
9.2
12.0
1.01
8.9
12.0
1.01
8.7
11.6
0.99
8.4
11.8
0.97
8.1
11.4
0.96
7.8
11.3
0.95
7.5
11.1
PART NUMBER
AVAILABILITY
PACKAGE
NE33284AS
Bulk up to 1K
84AS
NE33284A-T1
1K/Reel
84AS
ORDERING INFORMATION
1
Note:
Long leaded (1.7 mm min.) 84ASL package available upon request in
bulk quantities up to 1000 pcs. To order specify NE33284A-SL.
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
OUTLINE DIMENSIONS
(Units in mm)
NE33284A
PACKAGE OUTLINE 84AS
NE33284A
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
1.78
0.2
0.5
0.1
(ALL LEADS
)
1.0
0.2 (ALL LEADS)
1.78
0.2
1.7 MAX
0.1
+0.07
-0.03
S
S
D
G
Part Number Designator (Letter).
When the letter is upright,
the gate lead is to the right.
U
NE33284A
NE33284A LINEAR MODEL
Parameters
2 V, 10 mA
2 V, 20 mA
2 V, 30 mA
g
73 mS
97 mS
104 mS
t
5 pSec
5 pSec
5.5 pSec
RDS
210 ohms
156 ohms
140 ohms
MODEL RANGE
Frequency:
0.1 to 20 GHz
Bias:
V
DS
= 2 V, I
D
= 10, 20, 30 mA
Date:
7/2/96
Parameter
Units
capacitance
picofarads
inductance
nanohenries
resistance
ohms
conductance
millisiemans
UNITS
SCHEMATIC
BIAS DEPENDENT MODEL PARAMETERS
0.001
CGD_PKG
CHIP
RG
LG
CCD_PKG
CCD_PKG
CCD_PKG
LG_PKG
RG_PKG
GATE
RD
RDS
g
t
f=281GHz
RS_PKG
0.2
LS_PKG
0.12
RS
0.19
CDS
LD
LD_PKG
CCD_PKG
0.3
0.13
0.24
0.05
0.2
0.1
0.01
CSD_PKG
SOURCE
RD_PKG
DRAIN
CDG
CDC
CGS
GGS
1e_5
RI
0.52
0.04
0.22
0.05
0.14
0.01
CSG_PKG
0.16
0.5
0.5
0.28
CCG_PKG
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -8/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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