NEC'
S
3.2 V, 2 W, L&S BAND
MEDIUM POWER SILICON LD-MOSFET
FEATURES
LOW COST PLASTIC SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
HIGH OUTPUT POWER:
+32 dBm TYP
HIGH LINEAR GAIN:
10 dB TYP @ 1.8 GHz
HIGH POWER ADDED EFFICIENCY:
45% TYP at 1.8 GHz
SINGLE SUPPLY:
2.8 to 6.0 V
NE5520279A
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
Notes:
1.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2.
P
in
= 5 dBm
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the power amplifier
for mobile and fixed wireless applications. Die are manu-
factured using NEC's NEWMOS technology (NEC's 0.6 m
WSi gate lateral MOSFET) and housed in a surface mount
package.
DIGITAL CELLULAR PHONES:
3.2 V DCS1800 Handsets
0.7-2.5 GHz FIXED WIRELESS ACCESS
W-LAN
SHORT RANGE WIRELESS
RETAIL BUSINESS RADIO
SPECIAL MOBILE RADIO
APPLICATIONS
California Eastern Laboratories
0.90.2
0.20.1
(Bottom View)
3.60.2
1.50.2
1.2 MAX.
0.8 MAX.
1.0 MAX.
Source
Gate
Drain
0.40.15
5.7 MAX.
5.7 MAX.
0.60.15
0.80.15
4.4 MAX.
4.2 MAX.
Source
Gate
Drain
A
2
0
X
0
0
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
PART NUMBER
NE5520279A
PACKAGE OUTLINE
79A
SYMBOLS
CHARACTERISTICS
UNITS MIN
TYP
MAX
TEST CONDITIONS
P
OUT
Output Power
dBm
30.5
32.0
G
L
Linear Gain
dB
10
ADD
Power Added Efficiency
%
40
45
I
D
Drain Current
mA
800
I
GSS
Gate-to-Source Leakage Current
nA
100
V
GS
= 5.0 V
I
DSS
Saturated Drain Current
nA
100
V
DS
= 6.0 V
(Zero Gate Voltage Drain Current)
V
TH
Gate Threshold Voltage
V
1.0
1.4
1.9
V
DS
= 3.5 V, I
DS =
1 mA
g
m
Transconductance
S
1.3
V
DS
= 3.5 V, I
DS =
700 mA
BV
DSS
Drain-to-Source Breakdown Voltage
V
15
18
I
DSS
= 10 A
R
TH
Thermal Resistance
C/W
8
Channel-to-Case
Functional
Characteristics
Electrical DC Characteristics
f = 1.8 GHz, V
DS
= 3.2 V,
I
DSQ
= 700 mA, P
IN
= 25 dBm, except
P
IN
= 5 dBm for Linear Gain
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25 C)
SYMBOLS
PARAMETERS
UNITS RATINGS
V
DS
Drain Supply Voltage
V
15.0
V
GS
Gate Supply Voltage
V
5.0
I
D
Drain Current
A
0.6
I
D
Drain Current (Pulse Test)
2
A
1.2
P
T
Total Power Dissipation
W
12.5
T
CH
Channel Temperature
C
125
T
STG
Storage Temperature
C
-55 to +125
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS TYP MAX
V
DS
Drain to Source Voltage V
3.0
6.0
V
GS
Gate Supply Voltage
V
2.0
3.0
I
DS
Drain Current
1
A
0.8
1.0
P
IN
Input Power
dBm
25
30
f = 1.8 GHz, V
DS
= 3.2 V
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1 s.
NE5520279A
Note:
1. Duty Cycle 50%, Ton 1 s.
PART NUMBER
QTY
NE5520279A-T1-A
ORDERING INFORMATION
FREQUENCY (GHz)
Z
in
()
Z
OL
()
1
1.8
1.77 -j6.71
1.25 -j5.73
Note:
1. Z
OL
is the conjugate of optimum load impedance at given
voltage, idling current, input power.
LARGE SIGNAL IMPEDANCE
(V
DS
= 3.2 V, I
D
= 700 mA, f = 1.8 GHz)
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
NE5520279A
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
Input Power,P
in
(dBm)
Output Power
, P
out
(dBm)
Drain Efficiency
,
d (%)
Power
Added Efficiency
,
add (%)
Output Power
, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
gs
(V)
Drain Efficiency
,
d (%)
Power
Added Efficiency
,
add (%)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
Input Power,P
in
(dBm)
Output Power
, P
out
(dBm)
Drain Efficiency
,
d (%)
Power
Added Efficiency
,
add (%)
Average Two Tone Ouput Power, P
out
(dBm)
IMD, (dBc)
IMD vs. TWO TONE OUTPUT POWER
Output Power
, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
Input Power,P
in
(dBm)
Drain Efficiency
,
d (%)
Power
Added Efficiency
,
add (%)
Output Power
, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
gs
(V)
Drain Efficiency
,
d (%)
Power
Added Efficiency
,
add (%)
P
out
I
DS
d
10
15
20
25
30
5
35
30
25
20
15
10
0
25
50
75
100
1250
1000
750
500
250
0
I
ds
(mA)
a
dd
f = 1.8 GHz
V
DS
= 3.2 V
I
DQ
= 300 mA
P
out
I
DS
d
1
2
3
4
0
35
30
25
20
15
10
0
25
50
75
100
1250
1000
750
500
250
0
I
ds
(mA)
a
dd
f = 1.8 GHz
V
DS
= 3.2 V
P
in
= 25 dBm
P
out
I
DS
d
10
15
20
25
30
5
35
30
25
20
15
10
0
25
50
75
100
2500
2000
1500
1000
500
0
I
ds
(mA)
a
dd
f = 1.8 GHz
V
DS
= 3.2 V
I
DQ
= 700 mA
IM
3
IM
5
15
20
25
30
35
10
-70
-60
-50
-40
-30
-20
-10
f = 1.8 GHz
f = 1 MHz
V
DS
= 3.2 V
I
DQ
= 700 mA
P
out
I
DS
d
10
15
20
25
30
35
35
40
30
25
20
15
0
25
50
75
100
2500
2000
1500
1000
500
0
I
ds
(mA)
a
dd
f = 2.00 GHz
V
DS
= 5.0 V
I
DQ
= 300 mA
P
out
I
DS
d
1
2
3
4
0
40
35
30
25
20
15
0
25
50
75
100
2500
2000
1500
1000
500
0
I
ds
(mA)
a
dd
f = 2.00 GHz
V
DS
= 5.0 V
P
in
= 27 dBm
NE5520279A
TYPICAL SCATTERING PARAMETERS
(T
A
= 25C)
Coordinates in Ohms
Frequency in GHz
V
D
=
5.0 V, I
D
= 400 mA
Note: This file and many other s-parameter files can be downloaded from www.cel.com
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG ANG
MAG ANG
MAG
ANG
MAG ANG
(dB)
0.100
0.885
-152.5
11.510
98.5
0.021
10.3
0.830
-170.1
0.03
27.43
0.200
0.885
-166.9
5.882
87.7
0.022
0.2
0.833
-175.4
0.07
24.21
0.300
0.883
-172.4
3.896
80.8
0.022
- 5.2
0.840
-177.5
0.11
22.51
0.400
0.885
-175.6
2.897
75.2
0.021
- 9.2
0.849
-178.5
0.14
21.31
0.500
0.887
-177.9
2.278
70.1
0.021
- 12.9
0.851
-179.3
0.20
20.41
0.600
0.890
-179.8
1.865
65.3
0.020
- 15.7
0.856
179.9
0.27
19.66
0.700
0.895
178.7
1.569
60.7
0.020
- 19.3
0.861
179.1
0.30
19.05
0.800
0.900
177.3
1.346
56.5
0.019
- 21.8
0.869
178.4
0.32
18.55
0.900
0.905
176.0
1.168
52.4
0.018
- 24.5
0.876
177.9
0.36
18.12
1.000
0.911
174.6
1.024
48.5
0.017
- 27.2
0.882
177.2
0.39
17.79
1.100
0.916
173.6
0.911
44.7
0.016
- 28.8
0.894
176.5
0.36
17.48
1.200
0.921
172.2
0.812
40.9
0.015
- 30.8
0.898
175.5
0.42
17.21
1.300
0.924
171.0
0.728
37.5
0.015
- 33.3
0.903
174.7
0.47
16.93
1.400
0.926
169.9
0.655
34.1
0.014
- 33.9
0.907
173.9
0.62
16.84
1.500
0.927
168.7
0.594
30.8
0.013
- 36.0
0.914
172.9
0.68
16.65
1.600
0.929
167.5
0.541
27.9
0.012
- 36.6
0.921
172.2
0.76
16.54
1.700
0.930
166.3
0.494
25.1
0.011
- 37.3
0.925
171.5
0.98
16.58
1.800
0.931
165.2
0.451
22.4
0.010
- 38.5
0.926
170.7
1.22
13.67
1.900
0.935
164.1
0.415
19.6
0.009
- 38.5
0.930
169.8
1.35
12.97
2.000
0.937
162.9
0.384
17.1
0.009
- 38.8
0.937
169.0
1.33
12.95
2.100
0.941
161.8
0.356
14.9
0.008
- 36.9
0.942
168.5
1.45
12.62
2.200
0.944
160.6
0.329
12.6
0.007
- 40.8
0.941
167.8
1.74
11.58
2.300
0.949
159.5
0.305
10.2
0.006
- 36.6
0.942
167.0
2.04
11.01
2.400
0.950
158.3
0.285
7.7
0.006
- 36.0
0.947
166.0
2.04
11.00
2.500
0.955
157.3
0.267
5.8
0.005
- 34.6
0.952
165.5
2.04
11.27
2.600
0.956
156.3
0.248
4.0
0.005
- 32.7
0.953
164.9
2.59
10.34
2.700
0.958
155.4
0.232
2.0
0.004
- 31.4
0.952
164.2
3.32
9.53
2.800
0.957
154.5
0.217
0.0
0.003
- 27.2
0.954
163.2
4.54
8.76
2.900
0.959
153.8
0.204
- 1.6
0.003
- 22.0
0.958
162.4
5.69
8.58
3.000
0.959
152.9
0.192
- 3.1
0.003
- 5.2
0.961
161.9
5.78
8.26
3.100
0.962
152.5
0.180
- 4.5
0.002
- 1.3
0.960
161.1
9.71
7.87
3.200
0.961
151.5
0.170
- 6.1
0.002
27.2
0.960
160.2
9.31
7.08
3.300
0.965
150.8
0.161
- 7.6
0.002
56.3
0.964
159.4
9.54
7.19
3.400
0.967
150.1
0.152
- 8.8
0.002
79.5
0.965
158.6
7.96
6.89
3.500
0.971
149.6
0.144
- 10.0
0.003
86.6
0.963
157.6
5.89
6.46
NE5520279A
V
D
= 5.0 V, I
D
= 400 mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG = |S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|
, K = 1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
j50
j25
j10
0
10 25
-j10
-j25
-j50
-j100
j100
0
50
100
S
22
S
11
-120
-90
-60
S
21
S
12
120
90
60
30
150
180
-150
-30
0
NE5520279A
P.C.B. LAYOUT
(Units in mm)
79A PACKAGE
4.0
1.7
6.1
0.5
0.5
Source
Drain
Gate
5.9
1.2
1.0
0.5
Through hole 0.2 33
APPLICATION CIRCUIT (2.40-2.48 GHz)
J3
J4
P1
GND
VG
VD
RF IN
RF OUT
C14
C15
.30mm
.63mm
5.74mm
A
2
9
8
er=4.2
t=0.028
IN
OU
500855
C13
C12
C10
C8
C2
C3
C9
C11
C1
J2
J1
R1
U1
C4
C5
C6
J1
RF INPUT
J3
+Vg
C5
C7
NE5520279A
C14
R1
C15
C4
C13
C11
C9
C3
C2
C8
C10
C1
RF OUTPUT
J2
C12
J4
+Vd
1 SD-500881
SCHEMATIC DIAGRAM NE5520279A-EVAL
18
1 TF-100637
TEST CIRCUIT BLK
17
4
2-56 x 3/16 PHILLIPS PAN HEAD
16
2 MA101J
C2,C3
CASE 1 100pF CAP MURATA
15
1 MCR03J200
R1
0603 20 OHM RESISTOR ROHM
14
1 600S2R7CW
C4
0603 2.7pF CAP ATC
13
1 600S2R2BW
C15
0603 2.2pF CAP ATC
12
1 600S1R2BW
C14
0805 1.2pF CAP ATC
11
2 600S5R6CW
C1, C5
0603 5.6pF CAP ATC
10
1 600S3R3CW
C6
0603 3.3pF CAP ATC
9
2 TAJB475K010R
C12, C13
CASE B 4.7 uF CAP AVX
8
2 GRM40X7R104K025BL
C10, C11
0805 .1uF CAP MURATA
7
2 GRM40C0G102J050BD
C8, C9
0805 1000 pF CAP MURATA
6
1 NE5520279A
U1
IC NEC
5
1 703401
P1
GROUND LUG CONCORD
4
1 1250-003
J3, J4
FEEDTHRU MURATA
3
2 2052-5636-02
J1, J2
FLANGE MOUNT JACK RECEPTACLE
2
1 FD-500855B
PCB
S-BAND MODULE FABRICATION DRAWING
1
NE5520279A PARTS LIST
NE5520279A
TYPICAL APPLICATION CIRCUIT PERFORMANCE
(T
A
= 25C)
Output Power
, P
OUT
(dBm)
OUTPUT POWER vs.
INPUT POWER
Input Power, P
IN
(dBm)
IM3 vs.
OUTPUT POWER
Output Power, P
OUT
(dBm), Each Tone
IM3 (dBc)
13
20
22
24
26
30
28
32
34
36
14 15 16 17 18 19 20 21 22 23 24 25 26 27
3.6 V, 300 mA
3.6 V, 500 mA
6.0 V, 300 mA
6.0 V, 500 mA
f= 2.44 GHz
12
-55.0
-50.0
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-20.0
-20.0
14
16
18 20
22
24
26
28 30
3.6 V, 300 mA
3.6 V, 500 mA
6.0 V, 300 mA
6.0 V, 300 mA
f= 2.44 GHz
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales office.
NE5520279A
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
: 60 seconds or less
Preheating time at 120 to 180C
: 12030 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
: 215C or below
Time at temperature of 200C or higher
: 25 to 40 seconds
Preheating time at 120 to 150C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature) : 120C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
09/03/2003
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
PDF 
ZIP