DESCRIPTION

The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such

as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA's. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.

FEATURES

· Two different FET's (Q1 : P

out

= 2 W, Q2 : P

out

= 10 W) in one package

· Over 25 dB gain available by connecting two FET's in series

L (Q1)

= 13.5 dB TYP. (V

= 28 V, I

Dset (Q1)

= 20 mA, f = 2 140 MHz)

L (Q2)

= 11.0 dB TYP. (V

= 28 V, I

Dset (Q2)

= 100 mA, f = 2 140 MHz)

· High 1 dB compression output power : P

O (1 dB) (Q1)

= 35.4 dBm TYP. (V

= 28 V, I

Dset (Q1)

= 20 mA, f = 2 140 MHz)

O (1 dB) (Q2)

= 40.4 dBm TYP. (V

= 28 V, I

Dset (Q2)

= 100 mA, f = 2 140 MHz)

· High drain efficiency

d (Q1)

= 52% TYP. (V

= 28 V, I

Dset (Q1)

= 20 mA, f = 2 140 MHz)

d (Q2)

= 46% TYP. (V

= 28 V, I

Dset (Q2)

= 100 mA, f = 2 140 MHz)

· Low intermodulation distortion

: IM

3 (Q1)

40 dBc TYP. (V

= 28 V, I

Dset (Q1+Q2)

= 120 mA,

f = 2 132.5/2 147.5 MHz, P

out

= 33 dBm (2 tones) )

· Single Supply (V

: 3 V

30 V)

· Excellent Thermal Stability
· Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
· Integrated ESD protection
· Excellent stability against HCI (Hot Carrier Injection)

APPLICATION

· Digital cellular base station PA : W-CDMA/GSM/D-AMPS/PDC/N-CDMA/PCS etc.
· UHF-band TV transmitter PA

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

LDMOS FIELD EFFECT TRANSISTOR

NE55410GR

N-CHANNEL SILICON POWER LDMOS FET

FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

Document No. PU10542EJ02V0DS (2nd edition)
Date Published June 2005 CP(K)

The mark shows major revised points.

ORDERING INFORMATION

Part Number

Order Number

Package

Marking

Supplying Form

NE55410GR

NE55410GR-T3-AZ

16-pin plastic HTSSOP
(Pb-Free)

Note

55410

Embossed tape 12 mm wide

Pin 1 and 8 indicates pull-out direction of tape

Qty 1 kpcs/reel

Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE55410GR

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM

Pin No.

Pin Name

Pin No.

Pin Name

1 Source 9 Source

Drain (Q2)

Gate (Q1)

3 Drain

(Q2) 11 Source

Drain (Q2)

Drain (Q1)

5 Drain

(Q2) 13 Source

6 Source 14

Gate

(Q2)

Gate (Q1)

Gate (Q2)

8 Source 16 Source

(Top View)

Remark All the terminals of a Q2 connected to a

circuit. Backside : Source (S)

ABSOLUTE MAXIMUM RATINGS (T

= +25

C, unless otherwise specified)

Parameter Symbol

Test

Conditions

Ratings Unit

Drain to Source Voltage

Gate to Source Voltage

7 V

Drain Current (Q1)

D (Q1)

0.25

Drain Current (Q2)

D (Q2)

1.0

Total Device Dissipation (T

case

= 25

C) P

tot

Input Power (Q1)

in (Q1)

f = 2.14 GHz, V

= 28 V

0.3

Input Power (Q2)

in (Q2)

f = 2.14 GHz, V

= 28 V

1.5

Channel Temperature

150

Storage Temperature

stg

65 to +150

Data Sheet PU10542EJ02V0DS

NE55410GR

THERMAL RESISTANCE (T

= +25

Parameter Symbol

Test

Conditions MIN.

TYP.

MAX.

Unit

Channel to Case Resistance

th (ch-c)

2.5 3.0

C/W

RECOMMENDED OPERATING CONDITIONS (T

= +25

Parameter Symbol

MIN.

TYP.

MAX.

Unit

Drain to Source Voltage

28 30 V

Gate to Source Voltage

2.7 3.3 3.7 V

Input Power (Q1), CW

in (Q1)

15 23 dBm

Input Power (Q2), CW

in (Q2)

20 30 dBm

ELECTRICAL CHARACTERISTICS (T

= +25

Parameter Symbol

Test

Conditions MIN.

TYP.

MAX.

Unit

Gate to Source Leak Current

GSS (Q1)

GSS

= 5V

Drain to Source Leakage Current

DSS (Q1)

DSS

= 65 V

1 mA

Gate Threshold Voltage

th (Q1)

= 10 V, I

= 1 mA

2.2

2.8

3.4

Transconductance g

m (Q1)

= 28 V, I

= 20 mA

0.09

Drain to Source Breakdown Voltage

DSS (Q1)

DSS

= 10

A 65

Gate to Source Leak Current

GSS (Q2)

GSS

= 5V

Drain to Source Leakage Current

DSS (Q2)

DSS

= 65 V

1 mA

Gate Threshold Voltage

th (Q2)

= 10 V, I

= 1 mA

2.0

2.6

3.2

Transconductance g

m (Q2)

= 28 V, I

= 100 mA

0.45

Drain to Source Breakdown Voltage

DSS (Q2)

DSS

= 10

A 65

Data Sheet PU10542EJ02V0DS

NE55410GR

RF CHARACTERISTICS (T

= +25

Parameter Symbol

Test

Conditions MIN.

TYP.

MAX.

Unit

Gain 1 dB Compression Output Power

O (1 dB)

f = 2 140 MHz, V

= 28 V,

35.4

dBm

Drain Efficiency

Dset

= 20 mA

Linear Gain

= 15 dBm

13.5

Gain 1 dB Compression Output Power

O (1 dB)

f = 2 140 MHz, V

= 28 V,

40.4

dBm

Drain Efficiency

Dset

= 100 mA

Linear Gain

= 20 dBm

9.5

Gain 1 dB Compression Output Power

O (1 dB)

f = 1 840 MHz, V

= 28 V,

40.5

dBm

Drain Efficiency

Dset

= 100 mA

Linear Gain

= 20 dBm

Q1 + Q2

Gain 1 dB Compression Output Power

O (1 dB)

f = 880 MHz, V

= 28 V,

41.5

dBm

Drain Efficiency

Dset

= 120 mA (Q1 + Q2)

Linear Gain

= 5 dBm

Gain 1 dB Compression Output Power

O (1 dB)

f = 2 140 MHz, V

= 28 V,

40.0

dBm

Drain Efficiency

Dset

= 120 mA (Q1 + Q2)

Output Power

out

= 16 dBm

Linear Gain

= 10 dBm

3rd Order Intermodulation Distortion

dBc

Drain Efficiency

f = 2 132.5/2 147.5 MHz, V

= 28 V,

2 carrier W-CDMA 3GPP, Test Model1,
64DPCH, 67% Clipping,
I

Dset

= 120 mA (Q1 + Q2),

Ave P

out

= 33 dBm

Data Sheet PU10542EJ02V0DS

NE55410GR

TYPICAL CHARACTERISTICS (T

= +25

C, V

= 28 V, I

Dset

= 120 mA, unless otherwise specified)

Gain G (dB)

Output Power P

out

(dBm)

3rd/5th Order Intermodulation Distortion IM

/IM

(dBc)

2 tones Output Power P

out

(dBm)

/IM

vs. 2 TONES OUTPUT POWER

Lower
Upper

Drain Efficiency

(%)

CW, f = 960 MHz,
1 MHz Spacing

3rd/5th Order Intermodulation Distortion IM

/IM

(dBc)

2 tones Output Power P

out

(dBm)

/IM

, DRAIN EFFICIENCY,

vs. 2 TONES OUTPUT POWER

Lower
Upper

100

Drain Efficiency

(%)

W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping,
Center Frequency 2.14GHz,
15 MHz spacing

vs. OUTPUT POWER

GAIN, DRAIN EFFICIENCY,

Gain G (dB)

Output Power P

out

(dBm)

Drain Efficiency

(%)

vs. OUTPUT POWER

GAIN, DRAIN EFFICIENCY,

f = 840 MHz

860 MHz

880 MHz

900 MHz

920 MHz

f = 2.09 GHz

2.11 GHz

2.14 GHz

2.17 GHz

2.19 GHz

Remark The graphs indicate nominal characteristics.

Data Sheet PU10542EJ02V0DS

NE55410GR

EVALUATION CIRCUIT (f = 840 to 960 MHz, V

= 28 V, I

Dset

= 120 mA)

1 6 8 9 11 13 16

(Back side)

S S S S S S S S

NE55410GR

(open)

2.2 nH

TL8

TL9

TL10

TL11

15 pF

12 pF

9 pF

1 k

6.8 k

TL12

TL14

TL15

TL16

TL17

2 pF

6 pF

2 pF

TL13

0.22 F

47 pF

TL18

RFout

TL4

TL6

TL7

3 pF

47 pF

TL5

0.001 F

47 F

(+28 V)

1 k

2.2 k

6.8 k

TL1

TL2

TL3

0.22 F

47 pF

RFin

0.047

56 nH

4 pF

TL19

Symbol

Width (mm) Length (mm)

Symbol

Width (mm) Length (mm)

TL1 1.0 3.0

TL11 1.0 3.0

TL2 4.5 10.0

TL12 1.0 5.0

TL3 0.5 16.0

TL13 0.8 48.0

TL4 0.5 5.0

TL14 1.0 6.5

TL5 1.0 48.0

TL15 1.0 10.5

TL6 1.0 4.0

TL16 1.0 9.5

TL7 1.0 3.0

TL17 1.0 10.0

TL8 1.0 6.0

TL18 1.0 6.0

TL9 1.0 3.0

TL19 1.0 3.0

TL10 1.0 4.0

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Data Sheet PU10542EJ02V0DS

NE55410GR

EVALUATION CIRCUIT (f = 2 090 to 2 190 MHz, V

= 28 V, I

Dset

= 120 mA)

1 6 8 9 11 13 16

(Back side)

S S S S S S S S

NE55410GR

12 nH

TL14

TL12

TL13

0.75 pF

1 pF

1 k

6.8 k

TL15

TL17 TL18

TL20

3 pF

1 pF

TL16

0.22 F

15 pF

TL21

RFout

TL7

TL10

TL11

1 pF

33 pF

TL8

0.22 F

22 F

(+28 V)

1 k

6.8 k

TL1

TL2

0.22 F

47 pF

RFin

0.22 F

TL3

TL4

TL5

8.5 pF

2 pF

TL6

(open)

TL9

TL19

Symbol

Width (mm) Length (mm)

Symbol

Width (mm) Length (mm)

TL1 1.0 17.0

TL12 1.0 4.0

TL2 1.0 4.0

TL13 1.0 4.5

TL3 1.0 24.5

TL14 1.0 25.0

TL4 1.0 2.5

TL15 2.5 2.5

TL5 1.0 3.0

TL16 1.0 27.0

TL6 0.5 2.5

TL17 1.0 2.0

TL7 0.5 4.5

TL18 5.0 4.0

TL8 1.0 25.5

TL19 5.0 2.0

TL9 1.0 2.5

TL20 1.0 12.5

TL10 4.5 4.5

TL21 1.0 5.5

TL11 1.0 3.5

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Data Sheet PU10542EJ02V0DS

NE55410GR

PACKAGE DIMENSIONS

16-PIN PLASTIC HTSSOP (UNIT: mm)

(1.5)

0.9±0.2

0.20±0.10

(0.4)

(2.7)

(0.5)

(1.8)

(0.1)

(2.5)

5.2±0.2

5.5±0.3

6.4±0.3

0.65±0.1

0.20±0.10

NEC

55410

Remark ( ): Reference value

LAND PATTERN (UNIT: mm)

6.40

5.20

0.10

0.50

1.50

4.00

0.48

5.50

1.50

0.20

0.65

0.40

0.20

1.00

1.15

0.28

0.50

0.24

0.50

0.28

Remarks1. Via holes : 158 holes

2. Hole size :

0.25 mm

3. Min. spacing : 0.354 mm
4. : Solder resist or etching

Data Sheet PU10542EJ02V0DS

NE55410GR

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method

Soldering Conditions Condition

Symbol

Infrared Reflow

Peak temperature (package surface temperature)

: 260

C or below

Time at peak temperature

: 10 seconds or less

Time at temperature of 220

C or higher

: 60 seconds or less

Preheating time at 120 to 180

C :

120

30 seconds

Maximum number of reflow processes

: 3 times

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

IR260

Wave Soldering

Peak temperature (molten solder temperature)

: 260

C or below

Time at peak temperature

: 10 seconds or less

Preheating temperature (package surface temperature) : 120

C or below

Maximum number of flow processes

: 1 time

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

WS260

Partial Heating

Peak temperature (terminal temperature)

: 350

C or below

Soldering time (per side of device)

: 3 seconds or less

Maximum chlorine content of rosin flux (% mass)

: 0.2%(Wt.) or below

HS350

Caution Do not use different soldering methods together (except for partial heating).

Data Sheet PU10542EJ02V0DS

NE55410GR

4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279

Subject: Compliance with EU Directives

CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.

CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.

This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.

Restricted Substance

per RoHS

Concentration Limit per RoHS

(values are not yet fixed)

Concentration contained

in CEL devices

-A -AZ

Lead (Pb)

< 1000 PPM

Not Detected

(*)

Mercury

< 1000 PPM

Not Detected

Cadmium

< 100 PPM

Not Detected

Hexavalent Chromium

< 1000 PPM

Not Detected

PBB

< 1000 PPM

Not Detected

PBDE

< 1000 PPM

Not Detected

If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.

Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NE55410G

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: NE55410G