NEC's 3W, L&S-BAND
MEDIUM POWER GaAs HJ-FET
FEATURES
LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
HIGH OUTPUT POWER:
35 dBm TYP with 5.0 V Vdc
32.5 dBm TYP with 3.5 V Vdc
HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
LOW THERMAL RESISTANCE:
5C/W
NE6510179A
DESCRIPTION
NEC's NE6510179A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V
with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
ELECTRICAL CHARACTERISTICS
(T
C
= 25C)
PART NUMBER
NE6510179A
PACKAGE OUTLINE
79A
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
P
OUT
Output Power
dBm
31.5
32.5
G
L
Linear Gain
1
dB
10.0
ADD
Power Added Efficiency
%
50
58
I
D
Drain Current
A
0.72
I
DSS
Saturated Drain Current
A
2.4
V
DS
= 2.5 V; V
GS
= 0 V
V
P
Pinch-Off Voltage
V
-2.0
-0.4
V
DS
= 2.5 V; I
D
= 14 mA
R
TH
Thermal Resistance
C/W
5
8
Channel to Case
BV
GD
Gate to Drain Breakdown Voltage
V
12
I
GD
= 14 mA
Functional
Characteristics
Electrical DC
Characteristics
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100% . Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
Note: Unless otherwise specified, tolerance is 0.2 mm
f = 1900 MHz, V
DS
= 3.5 V,
Pin = +25 dBm, Rg = 100
I
DSQ
= 200 mA (RF OFF)
2
T
I
9
X
Source
Gate
Drain
4.2 MAX
5.7 MAX
4.4 MAX
0.8 0.15
0.6 0.15
5.7 MAX
0.4 0.15
Source
Gate
Drain
1.2
MAX
1.0 MAX
3.6 0.2
0.8 MAX
0.9 0.2
0.2 0.1
1.5 0.2
BOTTOM VIEW
California Eastern Laboratories
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25 C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
8
V
GS
Gate to Source Voltage
V
-4
I
DS
Drain Current
A
2.8
I
GS
Gate Current (I
GF
, I
GR
)
mA
25
P
T
Total Power Dissipation
2
W
15
T
CH
Channel Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
UNITS
TYP
MAX
V
DS
Drain to Source Voltage
V
3.5
6.0
T
CH
Channel Temperature
C
+125
G
COMP
Gain Compression
1
dB
3.0
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE6510179A
PART NUMBER
QTY
NE6510179A-T1-A
1 K/Reel
NE6510179A-A
Bulk, 100 piece min.
ORDERING INFORMATION
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED)
(T
C
= 25C)
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
P
OUT
Output Power
dBm
35.0
G
L
Linear Gain
1
dB
10.0
ADD
Power Added Efficiency
%
56
I
D
Drain Current
A
1.2
P
OUT
Output Power
dBm
31.5
G
L
Linear Gain
1
dB
15.0
ADD
Power Added Efficiency
%
70
I
D
Drain Current
A
0.53
f = 1900 MHz, V
DS
= 5.0 V,
Pin = +25 dBm, Rg = 100
I
DSQ
= 200 mA (RF OFF)
Notes:
1. Pin = 0 dBm
f = 900 MHz, V
DS
= 3.5 V,
Pin = +20 dBm, Rg = 100
I
DSQ
= 200 mA (RF OFF)
Note:
1. Recommended maximum gain compression is 3.0 dB at
V
DS
> 4.2 V.
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Case Temperature, T
C
(C)
25C
15
20
10
150
100
50
0
R
TH
= 8C/W
5
Total Power Dissipation, P
D
(W)
Transconductance, G
M
(mS)
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
Drain Current, I
D
(A)
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
Gate Voltage, G
V
(V)
DRAIN CURRENT vs.
DRAIN VOLTAGE
Drain Voltage, V
D
(V)
2.00
1.50
1.00
0.50
2.50
0
0.8
0.6
0.4
0.2
1.00
0
-.80
-1.0
-.60
-.20
0.00
-.40
NE6510179A
Drain Current, I
D
(A)
Maximum Available Gain, G
MAG
(dB)
Arrhenius Plots, MTTF (hours)
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
Frequency, GHz
ARRHENIUS PLOTS vs.
JUNCTION TEMPERATURE
Junction Temperature, T/T
CH
(1/K/1000)
30
25
20
15
10
5
0.1
4.0
4.6 V, 300 mA
3.5 V, 150 mA
2.2 V, 200 mA
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.0E+07
1.8
1.6
2
2.4
2.2
2.6
3
2.8
1.35E+06 Hrs
(T
CH
= 110
C)
E
A
= 1.0
E
V
1805 Hrs
(T
CH
= 217
C)
3
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
V
GS
=
0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
NE6510179A
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
10
25
50
100
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
TYPICAL SCATTERING PARAMETERS
(T
A
= 25C)
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.50
0.956
179.67
2.813
82.32
0.018
5.20
0.842
176.48
0.29
21.87
0.60
0.955
177.71
2.343
79.83
0.018
5.02
0.842
175.21
0.34
21.09
0.70
0.956
175.93
2.016
77.44
0.018
5.41
0.843
173.93
0.40
20.38
0.80
0.955
174.33
1.765
75.21
0.018
5.58
0.843
172.76
0.46
19.81
0.90
0.955
172.86
1.573
73.00
0.019
5.93
0.842
171.63
0.51
19.24
1.00
0.955
171.45
1.418
70.78
0.019
6.32
0.842
170.47
0.57
18.79
1.10
0.955
170.09
1.289
68.54
0.019
6.08
0.841
169.22
0.62
18.33
1.20
0.954
168.81
1.187
66.57
0.019
6.55
0.843
168.26
0.67
17.95
1.30
0.954
167.51
1.097
64.47
0.019
6.48
0.842
167.19
0.72
17.59
1.40
0.953
166.27
1.021
62.40
0.019
6.73
0.842
166.12
0.78
17.26
1.50
0.953
165.06
0.955
60.35
0.019
6.94
0.843
165.06
0.82
16.92
1.60
0.953
163.84
0.898
58.36
0.019
6.98
0.843
164.05
0.88
16.65
1.70
0.953
162.63
0.847
56.38
0.020
7.33
0.843
163.06
0.92
16.36
1.80
0.952
161.41
0.802
54.34
0.020
7.16
0.842
161.99
0.98
16.12
1.90
0.951
160.23
0.761
52.35
0.020
7.48
0.844
160.95
1.05
14.59
2.00
0.951
159.05
0.726
50.45
0.020
8.27
0.844
159.99
1.10
13.76
2.10
0.952
157.87
0.693
48.50
0.020
8.79
0.845
159.02
1.13
13.19
2.20
0.951
156.61
0.662
46.53
0.020
8.70
0.844
158.03
1.20
12.48
2.30
0.951
155.50
0.635
44.55
0.020
8.69
0.845
157.05
1.23
12.10
2.40
0.950
154.36
0.611
42.67
0.020
8.71
0.846
156.09
1.27
11.66
2.50
0.950
153.22
0.587
40.91
0.020
8.92
0.847
155.25
1.31
11.27
2.60
0.950
152.11
0.565
39.04
0.020
8.87
0.847
154.33
1.37
10.81
2.70
0.950
150.95
0.545
37.19
0.020
9.41
0.848
153.36
1.41
10.49
2.80
0.950
149.81
0.528
35.36
0.021
9.87
0.850
152.46
1.44
10.17
2.90
0.949
148.69
0.510
33.69
0.020
10.32
0.852
151.70
1.50
9.81
3.00
0.949
147.51
0.494
31.91
0.021
10.98
0.852
150.82
1.52
9.50
3.10
0.949
146.33
0.478
30.21
0.021
11.59
0.854
149.99
1.59
9.17
3.20
0.949
145.20
0.465
28.41
0.021
12.25
0.855
149.11
1.58
8.94
3.30
0.950
144.05
0.452
26.80
0.021
13.46
0.857
148.32
1.61
8.71
3.40
0.949
142.93
0.439
25.05
0.022
13.17
0.858
147.55
1.62
8.41
3.50
0.949
141.85
0.427
23.40
0.022
13.36
0.860
146.79
1.64
8.21
3.60
0.949
140.70
0.416
21.75
0.022
13.56
0.862
146.14
1.64
8.00
3.70
0.949
139.60
0.405
20.23
0.023
13.89
0.864
145.53
1.64
7.85
3.80
0.949
138.47
0.394
18.70
0.023
13.96
0.865
145.01
1.65
7.64
3.90
0.951
137.45
0.384
17.31
0.023
14.08
0.869
144.58
1.59
7.67
4.00
0.950
136.38
0.374
15.99
0.023
14.68
0.875
144.34
1.59
7.50
NE6510179A
V
D
= 3.5 V, I
D
= 150 mA
Coordinates in Ohms
Frequency in GHz
V
D
=
3.5 V, I
D
= 150
mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K 1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Note: This file and many other s-parameter files can be downloaded from www.cel.com
NE6510179A
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
10
25
50
100
-20
-22.5
17.5
20
8
-26
14
-32
TYPICAL SCATTERING PARAMETERS
(T
A
= 25C)
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.50
0.964
179.30
3.090
82.99
0.013
11.07
0.863
175.80
0.38
23.76
0.60
0.963
177.40
2.574
80.69
0.013
12.04
0.862
174.60
0.45
22.97
0.70
0.964
175.60
2.215
78.48
0.013
13.41
0.863
173.30
0.52
22.31
0.80
0.963
174.00
1.940
76.44
0.013
14.52
0.863
172.10
0.59
21.74
0.90
0.963
172.60
1.730
74.41
0.014
15.48
0.862
171.00
0.63
20.92
1.00
0.962
171.20
1.559
72.36
0.014
16.81
0.862
169.90
0.71
20.47
1.10
0.962
169.80
1.418
70.30
0.014
17.13
0.861
164.30
0.77
20.06
1.20
0.962
168.50
1.306
68.47
0.014
18.35
0.862
167.60
0.83
19.70
1.30
0.962
167.20
1.207
66.55
0.015
18.76
0.861
166.50
0.85
19.06
1.40
0.961
166.00
1.124
64.61
0.015
19.61
0.861
165.40
0.92
18.75
1.50
0.961
164.80
1.053
62.72
0.015
20.22
0.861
164.30
0.97
18.46
1.60
0.960
163.60
0.990
60.89
0.015
20.71
0.862
163.30
1.03
17.10
1.70
0.960
162.40
0.934
59.08
0.016
21.61
0.861
162.30
1.05
16.30
1.80
0.960
161.10
0.885
57.16
0.016
21.54
0.860
161.20
1.10
15.55
1.90
0.959
159.90
0.841
55.31
0.016
22.43
0.861
160.10
1.16
14.76
2.00
0.959
158.80
0.803
53.56
0.016
23.77
0.861
159.10
1.22
14.17
2.10
0.959
157.60
0.766
51.76
0.017
24.20
0.861
158.20
1.22
13.71
2.20
0.958
156.30
0.733
49.92
0.017
24.45
0.859
157.20
1.29
13.09
2.30
0.958
155.20
0.704
48.04
0.017
24.16
0.860
156.10
1.32
12.76
2.40
0.957
154.00
0.677
46.31
0.018
24.58
0.862
155.10
1.33
12.33
2.50
0.957
152.90
0.652
44.72
0.018
24.86
0.863
154.30
1.36
11.99
2.60
0.957
151.80
0.627
42.98
0.018
24.96
0.861
153.40
1.42
11.58
2.70
0.957
150.60
0.606
41.20
0.018
25.58
0.862
152.40
1.46
11.27
2.80
0.957
149.50
0.587
39.47
0.019
25.67
0.864
151.40
1.43
11.01
2.90
0.956
148.30
0.568
37.95
0.019
26.27
0.865
150.70
1.49
10.63
3.00
0.956
147.20
0.550
36.32
0.019
27.34
0.865
149.80
1.54
10.30
3.10
0.956
146.00
0.534
34.72
0.020
28.08
0.868
149.00
1.52
10.01
3.20
0.956
144.80
0.519
32.99
0.020
28.08
0.868
148.00
1.54
9.81
3.30
0.957
143.70
0.505
31.47
0.021
29.01
0.869
147.20
1.51
9.61
3.40
0.955
142.50
0.491
29.85
0.021
28.15
0.869
146.50
1.57
9.24
3.50
0.955
141.50
0.478
28.29
0.022
28.47
0.870
145.70
1.55
8.99
3.60
0.955
140.30
0.467
26.73
0.022
28.09
0.873
145.00
1.55
8.89
3.70
0.955
139.20
0.455
25.35
0.023
28.10
0.873
144.40
1.54
8.64
3.80
0.956
138.00
0.443
23.91
0.023
27.80
0.874
143.90
1.54
8.53
3.90
0.957
137.00
0.431
22.54
0.024
27.69
0.877
143.50
1.48
8.44
4.00
0.956
135.90
0.421
21.29
0.024
27.86
0.883
143.20
1.49
8.32
NE6510179A
V
D
= 5.0 V, I
D
= 300 mA
Coordinates in Ohms
Frequency in GHz
V
D
=
5.0 V, I
D
= 300
mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K 1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Note: This file and many other s-parameter files can be downloaded from www.cel.com
PDF 
ZIP