NE681M03
NEC's NPN SILICON TRANSISTOR
NEW M03 PACKAGE:
Smallest transistor outline package available
Low profile/0.59 mm package height
Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 7 GHz
LOW NOISE FIGURE:
NF = 1.4 dB
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
PART NUMBER
NE681M03
EIAJ
1
REGISTERED NUMBER
2SC5433
PACKAGE OUTLINE
M03
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
GHz
4.5
7.0
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
1.4
2.7
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
10
12
h
FE2
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
80
145
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
A
0.8
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
0.8
C
RE3
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.9
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
1
3
2
1.20.05
0.80.1
+0.1
-0.05
0.15
1.4 0.1
(0.9)
0.590.05
0.20.1
0.45
0.45
0.30.1
TE
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
NEC's NE681M03 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M03" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
10
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
65
P
T
Total Power Dissipation
mW
125
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
NE681M03
Collector Current, I
C
(mA)
DC Forward Current Gain, h
FE
FORWARD CURRENT GAIN
vs. COLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
V
CE
= 8 V
500
300
200
100
70
50
30
20
10
1 2 3 5 7 10 20 30 50
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
45
55
65
25
15
5
35
0
2
4
8
10
6
PART NUMBER
QUANTITY
NE681M03-A
NE681M03-T1-A
ORDERING INFORMATION
MODEL RANGE
Frequency:
0.1 to 5.0 GHz
Bias:
V
CE
= 2.5 V to 8 V, I
C
= 0.3 mA to 20 mA
Date:
12/98
hFE = 124 at V
CE
= 3 V, I
C
= 7 mA
Parameters
Q1
Parameters
Q1
IS
239.6e-18
MJC
0.223
BF
125
XCJC
0
NF
0.9854
CJS
0
VAF
12
VJS
0.75
IKF
0.200
MJS
0
ISE
1.933e-6
FC
0.5
NE
50
TF
10e-12
BR
18.25
XTF
25
NR
0.9771
VTF
0.40
VAR
10
ITF
0.13
IKR
11.81e-3
PTF
43.1
ISC
1.55e-18
TR
0.3e-9
NC
1.860
EG
1.11
RE
0.870
XTB
0
RB
4.0
XTI
3
RBM
5.2
KF
0
IRB
1e-6
AF
1
RC
4.635
CJE
1.2e-12
VJE
0.77
MJE
0.4844
CJC
0.4e-12
VJC
0.5275
SCHEMATIC
(1) Gummel-Poon Model
BJT NONLINEAR MODEL PARAMETERS
(1)
UNITS
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
Parameters
681M03
C
CB
0.07e-12
C
CE
0.01e-12
L
B
0.3e-9
L
E
0.8e-9
C
CBPKG
0.08e-12
C
CEPKG
0.08e-12
L
BX
0.12e-9
L
CX
0.10e-9
L
EX
0.12e-9
ADDITIONAL PARAMETERS
Base
Emitter
Collector
L
BX
L
B
L
EX
L
E
L
CX
C
CBPKG
C
CB
C
CE
C
CEPKG
Q1
NE681M03
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
Internet: http://WWW.CEL.COM
06/10/2002
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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CEL for all damages resulting from such improper use or sale.
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Telephone: (408) 919-2500
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