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Электронный компонент: NE696M01-T1

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NE696M01
NPN SILICON HIGH
FREQUENCY TRANSISTOR
HIGH f
T
:
14 GHz TYP at 3 V, 10 mA
LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
HIGH GAIN:
|S
21E
|
2
= 14 dB TYP at 2 GHz
6 PIN SMALL MINI MOLD PACKAGE
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M01
DESCRIPTION
The NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
PRELIMINARY DATA SHEET
California Eastern Laboratories
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
PART NUMBER
NE696M01
PACKAGE OUTLINE
M01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
A
0.1
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
0.1
h
FE1
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
80
120
160
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
GHz
14
Cre
2
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.15
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
dB
14
NF
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
dB
1.6
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Notes:
1. Pulsed measurement, pulse width
350
s, duty cycle
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
2.1
0.1
1.25
0.1
0 ~ 0.1
0.15
0.9
0.1
0.7
2.0
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
T95
TOP VIEW
SIDE VIEW
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9
V
CEO
Collector to Emitter Voltage
V
6
V
EBO
Emitter to Base Voltage
V
2
I
C
Collector Current
mA
30
P
T
Total Power Dissipation
mW
150
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE696M01
PART NUMBER
QUANTITY
PACKAGING
NE696M01-T1
3000
Tape & Reel
V
CE =
1
V
,
I
C =
3 mA
1.0
1.4
18.5
0.53
79
0.27
1.4
1.46
16.4
0.47
95
0.13
1.7
1.55
15.2
0.43
111
0.19
2.0
1.8
14.5
0.39
132
0.16
3.0
2.3
11.0
0.3
177
0.10
V
CE =
2 V
,
I
C =
1 mA
FREQ.
NF
OPT
G
A
OPT
(GHz)
(dB)
(dB)
MAG
ANG
Rn/50
NE696M01
TYPICAL NOISE PARAMETERS
(T
A
= 25C)
0.5
.94
16.8
0.72
41
0.52
0.8
1.1
14.8
0.66
65
0.44
1.0
1.25
13.8
0.63
79
0.39
1.5
1.55
11.4
0.56
104
0.31
2.0
1.94
9.6
0.5
138
0.17
3.0
2.65
7.0
0.46
-173
0.07
0.5
1.2
23.0
0.49
37
0.38
0.8
1.32
20.3
0.44
62
0.27
1.0
1.47
18.8
0.42
76
0.30
1.5
1.63
15.8
0.39
98
0.23
2.0
1.82
13.0
0.33
126
0.18
3.0
2.17
9.8
0.25
173
0.10
V
CE =
2
V
,
I
C =
5 mA
V
CE =
3
V
,
I
C =
5 mA
0.5
1.25
24.2
0.5
37
0.39
0.8
1.35
20.7
0.45
62
0.26
1.0
1.41
18.8
0.44
78
0.29
1.5
1.58
15.2
0.41
97
0.24
2.0
1.81
13.7
0.34
126
0.20
3.0
2.29
12.0
0.29
164
0.09
ORDERING INFORMATION
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
0
10
20
30
40
50
0.5
1.0
V
CE
= 2 V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Total Power Dissipation, P
T
(mW)
Ambient Temperature, T
A
(C)
Collector Current, I
C
(mA)
Base to Emitter Voltage, V
BE
(V)
25
20
15
10
5
0
1.0
2.0
3.0
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
I
B
= 20
A
500
200
100
50
20
10
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
DC Current Gain, hFE
Collector Current, I
C
(mA)
Collector to Emitter Voltage, V
CE
(V)
200
100
0
0
50
100
150
NE696M01
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Collector to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
DC Current Gain, h
FE
(mA)
Collector Current, I
C
(mA)
30.0m
2.00m
/div
0.00
0.00
VCE (V)
500m /div
6.00
IC
150.0
10.0
/div
50.0
0.00
IC (A)
2.00m /div
30.0m
HFE
NE696M01
V
CE
= 1 V, I
C
= 5 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.40
0.728
-52.30
10.962
136.50
0.040
56.00
0.832
-32.90
0.303
24.378
0.50
0.684
-64.20
10.349
128.40
0.046
51.30
0.779
-39.10
0.338
23.521
0.60
0.639
-73.80
9.557
121.20
0.052
46.70
0.732
-44.00
0.398
22.643
0.70
0.594
-83.40
8.885
114.50
0.056
42.10
0.687
-48.50
0.463
22.005
0.80
0.556
-92.50
8.236
108.30
0.059
38.80
0.647
-52.30
0.522
21.449
0.90
0.522
-100.70
7.644
102.80
0.062
35.70
0.615
-55.70
0.579
20.909
1.00
0.492
-108.50
7.116
97.80
0.063
33.80
0.587
-58.60
0.640
20.529
1.20
0.442
-123.40
6.242
88.70
0.067
29.60
0.542
-64.10
0.748
19.692
1.40
0.406
-137.30
5.522
80.40
0.069
26.80
0.509
-69.10
0.860
19.032
1.60
0.380
-150.60
4.931
73.00
0.070
24.40
0.485
-73.40
0.976
18.478
1.80
0.362
-164.30
4.452
65.90
0.072
22.70
0.469
-77.90
1.069
16.304
2.00
0.353
-176.70
4.047
59.30
0.074
21.90
0.459
-81.80
1.151
15.018
2.25
0.351
167.30
3.606
51.40
0.075
20.20
0.451
-86.70
1.270
13.695
2.50
0.360
152.60
3.248
43.80
0.077
20.20
0.449
-91.40
1.353
12.702
2.75
0.377
138.80
2.942
36.40
0.079
19.30
0.453
-96.10
1.417
11.872
3.00
0.397
127.30
2.676
29.70
0.081
18.50
0.458
-100.50
1.475
11.110
3.50
0.451
107.70
2.251
16.40
0.085
18.50
0.477
-108.90
1.530
9.936
4.00
0.498
93.20
1.930
4.10
0.092
17.50
0.496
-118.00
1.515
8.980
4.50
0.538
82.30
1.690
-7.90
0.101
16.20
0.513
-128.80
1.460
8.216
5.00
0.567
74.10
1.509
-19.70
0.113
13.60
0.532
-142.40
1.371
7.622
5.50
0.587
67.30
1.361
-31.50
0.127
9.40
0.555
-158.60
1.283
7.107
6.00
0.608
61.10
1.229
-43.20
0.141
4.00
0.593
-175.70
1.175
6.870
6.50
0.630
55.20
1.091
-54.40
0.155
-1.40
0.637
168.60
1.077
6.778
7.00
0.657
49.10
0.949
-63.80
0.164
-6.40
0.678
157.90
1.009
7.057
7.50
0.690
42.90
0.818
-70.40
0.171
-9.20
0.719
154.80
0.911
6.798
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
0.2
0.4
0.6
0.8 1
1.5
2
3
4 5
10 20
50
-50
20
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
-0.2
-0.4
-0.6
-0.8
-1
-1.5
-2
-3
-4
-5
-10
-20
S
11
S
22
270
180
225
315
135
0
90
5.00
10.00
15.00
45
S
21
S
12
0.05
0.10
0.15
NE696M01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.40
0.941
-25.2
2.924
154.2
0.037
67.9
0.977
-16.3
0.181
18.978
0.80
0.874
-49.7
2.776
132.3
0.066
51.3
0.930
-31.3
0.255
16.239
1.00
0.833
-61.1
2.642
122.1
0.077
43.1
0.904
-37.9
0.315
15.354
2.00
0.610
-119.1
2.104
75.2
0.097
9.5
0.798
-66.0
0.662
13.363
2.50
0.536
-150.6
1.808
54.7
0.090
-2.7
0.765
-77.3
0.919
13.030
3.00
0.502
176.8
1.551
36.1
0.077
-10.4
0.755
-87.4
1.238
10.100
4.00
0.550
123.5
1.121
4.0
0.053
-0.2
0.769
-107.1
2.016
7.495
5.00
0.617
93.4
0.852
-22.3
0.071
25.0
0.789
-133.7
1.607
6.222
6.00
0.660
74.9
0.665
-45.6
0.116
21.5
0.821
-169.3
1.048
6.238
NE696M01
V
CE
= 2 V, I
C
= 1 mA
V
CE
= 2 V, I
C
= 5 mA
0.40
0.753
-46.2
11.297
139.6
0.030
59.6
0.871
-27.0
0.296
25.758
0.80
0.583
-83.4
8.809
111.9
0.047
43.1
0.715
-43.8
0.509
22.728
1.00
0.513
-98.3
7.704
101.4
0.051
37.7
0.660
-49.4
0.628
21.791
2.00
0.338
-165.4
4.496
61.9
0.059
27.5
0.541
-70.7
1.163
16.374
2.50
0.333
161.7
3.634
46.0
0.062
27.6
0.530
-80.0
1.357
14.112
3.00
0.366
134.1
3.005
31.6
0.066
27.8
0.538
-89.2
1.460
12.563
4.00
0.468
97.3
2.169
5.4
0.081
29.4
0.575
-107.7
1.386
10.575
5.00
0.543
77.4
1.697
-19.0
0.107
25.2
0.610
-132.7
1.152
9.638
6.00
0.591
64.3
1.381
-43.2
0.141
14.8
0.666
-167.0
0.921
9.910
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
Coordinates in Ohms
Frequency in GH
z
V
CE
=
2 V, I
C
= 10
mA
NE696M01
NE696M01
V
CE
= 3 V, I
C
= 5 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.40
0.765
-43.9
11.370
140.8
0.028
60.3
0.885
-25.1
0.299
26.086
0.80
0.596
-79.7
8.988
113.4
0.043
44.4
0.739
-41.1
0.506
23.202
1.00
0.525
-94.2
7.898
102.7
0.046
39.6
0.687
-46.5
0.627
22.348
2.00
0.335
-160.2
4.669
63.0
0.054
30.6
0.573
-67.5
1.159
16.952
2.50
0.323
166.2
3.781
47.0
0.057
30.6
0.562
-76.6
1.352
14.673
3.00
0.353
137.5
3.134
32.4
0.062
31.8
0.570
-85.9
1.422
13.178
4.00
0.456
99.2
2.266
5.9
0.078
34.1
0.606
-104.5
1.312
11.285
5.00
0.533
78.9
1.773
-18.6
0.106
29.7
0.642
-129.8
1.053
10.827
6.00
0.583
65.7
1.442
-43.1
0.142
18.5
0.695
-164.2
0.823
10.067
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,