NESG2101M16
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
DESCRIPTION
NEC's NESG2101M16 is fabricated using NECs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators
California Eastern Laboratories
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
HIGH OUTPUT POWER:
P
1dB
= 21 dBm at 2 GHz
LOW NOISE FIGURE:
NF
= 0.9 dB at 2 GHz
NF
= 0.6 dB at 1 GHz
HIGH MAXIMUM STABLE POWER GAIN:
MSG
= 17 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
FEATURES
PART NUMBER
NESG2101M16
PACKAGE OUTLINE
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
P
1dB
Output Power at 1 dB Compression Point
dBm
21
V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz, Z
S
= Z
SOPT
, ZL = Z
LOPT
G
L
Linear Gain, V
CE
= 3.6 V, I
CQ
= 10 mA, f = 2 GHz,
dB
15
NF
Noise Figure at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
dB
0.9
1.2
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz,
dB
11.0
13.0
Z
S
= Z
SOPT
, ZL = Z
LOPT
NF
Noise Figure at V
CE
= 2 V, I
C
= 7mA, f = 1 GHz,
dB
0.6
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 7 mA, f = 1 GHz,
dB
19.0
Z
S
= Z
SOPT
, ZL = Z
LOPT
MSG
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
dB
14.5
17.0
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
dB
11.5
13.5
f
T
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 50 mA, f = 2 GHz
GHz
14
17
C
re
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
pF
0.4
0.5
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
100
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
100
h
FE
DC Current Gain
3
at V
CE
= 2 V, I
C
= 15 mA
130
190
260
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
RF
DC
S
21
S
12
Notes:
1. MSG =
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
PRELIMINARY DATA SHEET
M16
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
x 1.0 mm (t) glass epoxy PCB.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
NESG2101M16
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
13.0
V
CEO
Collector to Emitter Voltage
V
5.0
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
100
P
T
2
Total Power Dissipation
mW
190
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG2101M16-T3-A 10 K pcs
reel
Pin 1 (Collector), Pin 6
(Emitter) face the perfora-
tion side of the tape
0.50.05
0.125
+0.1
-0.0
5
0.4
0.4
0.8
0.150.05
1.2
+0.07
-0.0
5
0.8
+0.07
-0.05
1.00.05
1
2
3
6
5
4
Hz
4. Base
5. Emitter
6. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
11/13/2003
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
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See CEL Terms and Conditions for additional clarification of warranties and liability.
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