NEC's 1550 nm InGaAsP MQW-DFB
LASER DIODE IN CAN PACKAGE
FOR LONG HAUL 2.5 Gb/s APPLICATIONS
NX6509
Series
FEATURES
OPTICAL OUTPUT POWER:
P
o
= 5.0 mW
LOW THRESHOLD CURRENT:
I
th
= 10 mA
HIGH SPEED:
t
r
= 100 ps MAX.
t
f
= 150 ps MAX.
WIDE OPERATING TEMPERATURE RANGE:
T
C
= -20 to +85C
INGAAS MONITOR PIN-PD
CAN PACKAGE:
5.6 mm
FIBER COUPLING POINT:
7.51.0 mm
NEC's NX6509 Series is a 1550 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
These devices are designed for 2.5 Gb/s: STM-16 (L-16.2)
application and ideal for Synchronous Digital Hierarchy
(SDH) system.
DESCRIPTION
California Eastern Laboratories
PRELIMINARY DATA SHEET
NX6509 Series
ABSOLUTE MAXIMUM RATINGS
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= -20 to +85C, unless otherwise specified)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
05/04/2004
PARAMETER
SYMBOL
RATINGS
UNIT
Optical Output Power from Fiber
P
o
10
mW
Forward Current of LD
I
F
150
mA
Reverse Voltage of LD
V
R
2.0
V
Forward Current of PD
I
F
2.0
mA
Reverse Voltage of PD
V
R
15
V
Operating Case Temperature
T
C
-
20 to +85
C
Storage Temperature
T
stg
-
40 to +85
C
Assemble Temperature
T
asb
150 (15 Hr)
C
Lead Soldering Temperature
T
sld
350 (3 sec.)
C
Relative Humidity (noncondensing)
RH
85
%
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Optical Output Power
P
o
CW
5.0
mW
Operating Voltage
V
op
P
o
= 5.0 mW
1.1
1.6
V
Threshold Current
I
th
T
C
= 25C
10
20
mA
50
Differential Efficiency
d
P
o
= 5.0 mW, T
C
= 25C
0.18
0.25
W/A
P
o
= 5.0 mW
0.10
Temperature Dependence of
Differential Efficiency
d
d
= 10 log
d
(@T
C
C)
d
(@25 C)
-
3.0
-
1.6
dB
Peak Emission Wavelength
p
P
o
= 5.0 mW
1 530
1 570
nm
Side Mode Suppression Ratio
SMSR
P
o
= 5.0 mW
30
40
dB
Rise Time
t
r
P
o
= 5.0 mW, 20-80%
100
ps
Fall Time
t
f
P
o
= 5.0 mW, 80-20%
150
ps
Monitor Current
I
m
V
R
= 1.5 V, P
o
= 5.0 mW
200
1 000
2 000
A
Monitor Dark Current
I
D
V
R
= 1.5 V, T
C
= 25C
0.1
50
nA
V
R
= 1.5 V
10
500
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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