UPA801T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
HIGH COLLECTOR CURRENT: 100mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
DESCRIPTION
The UPA801T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
Notes: 1.Pulsed measurement, pulse width
350
s, duty cycle
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA801T-T1, 3K per reel.
.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
PART NUMBER
UPA801T
PACKAGE OUTLINE
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
1.0
h
FE1
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
70
120
250
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
GHz
3.0
4.5
Cre
2
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.7
1.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
7
9
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
1.2
2.5
h
FE1
/h
FE2
h
FE
Ratio: h
FE1
= Smaller Value of Q
1
or Q
2
0.85
h
FE2
= Larger Value pf Q
1
or Q
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
California Eastern Laboratories
2.1
0.1
1.25
0.1
0 ~ 0.1
0.15
0.9
0.1
0.7
2.0
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
12
V
EBO
Emitter to Base Voltage
V
3
I
C
Collector Current
mA
100
P
T
Total Power Dissipation
1 Die
mW
110
2 Die
mW
200
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
UPA801T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Total Power Dissipation, P
T
(mW)
Ambient Temperature, T
A
(
C)
Base to Emitter Voltage, V
BE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
200
100
0
50
100
150
2 Elements in
Total
Per Element
20
0.5
1.0
10
0
V
CE
= 3 V
25
20
15
10
5
0
5
10
l
B
=160
A
140
A
120
A
100
A
80
A
60
A
40
A
20
A
DC Current Gain, h
FE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
200
100
50
20
10
0.5
1
5
10
50
V
CE
= 3 V
UPA801T
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product, f
T
(GHz)
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Collector to Base Voltage, V
CB
(V)
Feed Back Capacitance, C
RE
(pF)
INSERTION POWER GAIN vs.
FREQUENCY
Noise Figure (dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Frequency, f (GHz)
Collector Current, I
C
(mA)
Insertion Power Gain, IS
21e
I
2
(dB)
Insertion Power Gain, IS
21e
I
2
(dB)
20
10
5
2
1
0.5
1
5
10
50
V
CE
= 3 V
f = 1 GHz
15
10
5
0
0.5
1
5
10
50
100
V
CE
= 3 V
f = 1 GHz
6
4
2
0
0.5
1.0
5.0
10
50
100
V
CE
= 3 V
f = 1 GHz
24
20
16
12
4
8
0
0.1
0.2
0.5
1.0
2.0
5.0
V
CE
= 3 V
lc = 7 mA
5.0
2.0
1.0
0.5
0.2
0.1
1
2
5
10
20
50
f = 1 MHz
UPA801T
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
V
CE
= 3 V, I
C
= 3 mA, Z
0
= 50
FREQUENCY
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
.899
-30.5
5.578
153.7
.042
69.0
.923
-17.3
0.20
.808
-60.0
5.327
134.4
.069
54.5
.793
-29.2
0.30
.723
-86.7
4.877
119.6
.084
46.0
.679
-36.4
0.40
.660
-106.2
4.341
108.1
.093
41.1
.604
-39.5
0.50
.610
-125.9
3.883
98.5
.098
38.8
.550
-42.0
0.60
.583
-138.6
3.388
90.9
.102
37.4
.613
-44.2
0.70
.560
-150.0
3.046
84.3
.106
37.8
.487
-45.9
0.80
.547
-159.4
2.741
78.5
.108
38.1
.468
-47.9
0.90
.538
-167.4
2.498
73.4
.112
39.5
.455
-49.9
1.00
.535
-174.4
2.287
68.9
.116
41.0
.444
-52.3
1.10
.534
179.3
2.111
64.6
.120
43.0
.435
-54.7
1.20
.533
173.4
1.965
60.2
.125
45.1
.429
57.2
1.30
.533
168.3
1.830
56.3
.131
46.7
.424
-59.9
1.40
.534
163.2
1.721
52.7
.139
48.3
.422
-62.8
1.50
.538
158.7
1.620
49.2
.146
49.8
.417
-65.7
1.60
.542
154.3
1.544
45.7
.155
51.3
.414
-68.8
1.70
.545
150.0
1.464
42.7
.164
52.4
.415
-72.0
1.80
.548
146.1
1.396
39.5
.174
53.0
.412
-75.3
1.90
.552
142.0
1.336
36.6
.187
53.7
.411
-78.8
2.00
.556
138.3 1,280
33.6
.199
54.1
.411
-82.3
UPA801T
V
CE
= 3 V, I
C
= 1 mA, Z
0
= 50
FREQUENCY
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
.967
-22.9
1.935
159.9
.045
74.0
.978
-9.2
0.20
.930
-45.8
1.968
143.1
.083
60.1
.931
-17.4
0.30
.884
-67.1
1.938
129.1
.108
48.9
.870
-23.2
0.40
.842
-86.9
1.827
117.2
.125
39.4
.822
-28.0
0.50
.801
-103.1
1.748
106.7
.134
32.6
.779
-31.9
0.60
.771
-117.0
1.576
97.4
.137
27.1
.749
-35.3
0.70
.742
-130.0
1.498
89.2
.137
22.9
.722
-38.4
0.80
.722
-141.2
1.403
81.9
.134
20.0
.702
-41.3
0.90
.706
-151.1
1.326
75.6
.129
18.5
.690
-44.4
1.00
.696
-159.9
1.242
69.6
.124
17.8
.680
-47.4
1.10
.689
-167.7
1.169
64.5
.118
18.1
.671
-50.4
1.20
.685
-174.9
1.102
59.6
.112
19.8
.666
-53.6
1.30
.681
178.7
1.030
55.3
.106
23.5
.660
-56.9
1.40
.681
172.6
.979
50.9
.103
28.0
.658
-60.4
1.50
.683
166.8
.925
47.2
.100
33.6
.654
-64.0
1.60
.684
161.4
.884
43.6
.102
40.4
.651
-67.6
1.70
.684
156.1
.842
40.4
.107
47.5
.651
-71.5
1.80
.686
151.4
.804
37.3
.115
53.5
.649
-75.1
1.90
.689
146.6
.773
34.6
.127
57.9
.646
-79.2
2.00
.690
142.1
.738
32.3
.141
62.1
.646
-83.0
UPA801T
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
CE
= 3 V, I
C
= 5 mA, Z
0
= 50
0.10
.819
-38.9
8.934
148.0
.038
65.8
.868
-23.6
0.20
.701
-73.4
8.007
127.6
.060
53.1
.687
-36.7
0.30
.608
-102.3
6.898
112.6
.072
47.6
.560
-42.4
0.40
.549
-123.6
5.819
101.8
.079
45.2
.483
-45.4
0.50
.511
-139.6
4.970
93.5
.086
45.7
.434
-47.2
0.60
.494
-151.0
4.255
86.9
.093
46.5
.402
-48.6
0.70
.481
-160.8
3.750
81.4
.099
47.2
.379
-49.9
0.80
.475
-168.6
3.328
76.3
.107
48.9
.361
-51.5
0.90
.472
-175.7
3.004
72.0
.113
49.7
.350
-53.4
1.00
.471
178.2
2.734
67.7
.122
50.9
.340
-55.4
1.10
.473
172.8
2.522
64.0
.130
51.6
.332
-57.3
1.20
.474
167.6
2.355
60.2
.139
52.3
.328
59.7
1.30
.474
162.9
2.176
56.7
.148
53.1
.322
-62.3
1.40
.477
158.4
2..038
53.2
.158
53.3
.319
-65.2
1.50
.481
154.4
1.921
49.8
.168
53.7
.315
-68.2
1.60
.484
150.3
1.818
46.7
.177
53.3
.313
-70.9
1.70
.489
146.5
1.726
43.9
.190
53.3
.312
-73.9
1.80
.490
142.9
1.647
40.6
.200
53.0
.312
-77.2
1.90
.495
139.3
1.578
37.6
.212
52.7
.309
-80.8
2.00
.501
136.0
1.505
35.0
.223
52.0
.309
-84.0
V
CE
= 3 V, I
C
= 7 mA, Z
0
= 50
FREQUENCY
S
11
S
21
S
12
S
22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.10
.750
-45.7
11.858
144.0
.035
63.3
.816
-28.5
0.20
.618
-84.9
10.093
122.3
.053
53.2
.609
-41.8
0.30
.528
-114.5
8.219
107.7
.054
50.6
.481
-46.7
0.40
.483
-134.3
6.684
97.9
.073
50.6
.411
-49.1
0.50
.459
-148.5
5.565
90.5
.081
50.7
.365
-50.5
0.60
.447
-158.8
4.737
84.6
.089
52.3
.337
-51.5
0.70
.441
-167.4
4.134
79.7
.098
53.5
.337
-51.5
0.80
.439
-174.4
3.653
75.2
.107
54.2
.300
-54.2
0.90
.437
179.2
3.283
71.1
.117
54.9
.290
-55.9
1.00
.437
173.7
2.978
67.2
.126
55.6
.281
-57.9
1.10
.440
168.6
2.732
63.7
.136
55.8
.275
-59.8
1.20
.443
163.9
2.533
60.0
.147
55.3
.270
-52.3
1.30
.444
159.6
2.357
66.6
.158
55.4
.267
-64.7
1.40
.449
155.5
2.216
53.4
.169
55.3
.264
-67.5
1.50
.450
151.6
2.077
50.3
.180
54.7
.259
-70.5
1.60
.455
147.9
1.972
47.4
.192
64.5
.258
-73.3
1.70
.459
144.3
1.868
44.3
.202
53.9
.256
-76.3
1.80
.462
140.9
1.789
41.3
.214
53.0
.255
-79.6
1.90
.466
137.5
1.702
38.4
.226
52.3
.253
-83.0
2.00
.470
134.4
1.635
36.1
.238
51.5
.253
-86.4
PART NUMBER QUANTITY PACKAGING
UPA801T-T1
3000 Tape & Reel
ORDERING INFORMATION
UPA801T
UNITS
Parameter
Units
time
seconds
capacitance
farads
inductance
henries
resistance
ohms
voltage
volts
current
amps
MODEL RANGE
Frequency:
0.1 to 3.0 GHz
Bias:
V
CE
= 1 V to 5 V, I
C
= 1 mA to 10 mA
Date:
12/98
Note:
This nonlinear model utilized the latest data available.
See our Design Parameter Library at www.cel.com for this data.
NONLINEAR MODEL
(1) Gummel-Poon Model
Parameters
Q1, Q2
Parameters
Q1, Q2
IS
6e-16
MJC
0.55
BF
120
XCJC
0.3
NF
0.98
CJS
0
VAF
10
VJS
0.75
IKF
0.08
MJS
0
ISE
32e-16
FC
0.5
NE
1.93
TF
12e-12
BR
12
XTF
6
NR
0.991
VTF
10
VAR
3.9
ITF
0.2
IKR
0.17
PTF
0
ISC
0
TR
1e-9
NC
2
EG
1.11
RE
0.38
XTB
0
RB
4.16
XTI
3
RBM
3.6
KF
1.56e-18
IRB
1.96e-4
AF
1.49
RC
2
CJE
2.8e-12
VJE
1.3
MJE
0.5
CJC
1.1e-12
VJC
0.7
BJT NONLINEAR MODEL PARAMETERS
(1)
UPA801T
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
9/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
NONLINEAR MODEL
SCHEMATIC
MODEL RANGE
Frequency:
0.1 to 3.0 GHz
Bias:
V
CE
= 1 V to 5 V, I
C
= 1 mA to 10 mA
Date:
12/98
Pin_1
Pin_2
Pin_3
Pin_4
Pin_5
Pin_6
0.07 pF
CCEPKG2
CCBPKG2
0.6 nH
0.07 pF
CCE2
CCB2
0.07 pF
CCE1
0.1 pF
0.82 nH
0.6 nH
0.05 nH
0.65 nH
Q1
Q2
CCBPKG1
CCB1
LE1
LB1
LB
0.05 nH
LB
0.05 nH
LE
C_B2E2
0.05 pF
C_B1B2
0.05 pF
LB2
LE2
C_C1B2
0.1 pF
LC
0.05 nH
LC
0.05 nH
LE
0.05 nH
C_E1C2
C_C1E1
0.05 pF
0.05 pF
C_E1B2
0.1 pF
0.1 pF
0.06 pF
0.1 pF
PDF 
ZIP