FEATURES
SILICON RFIC
LOW CURRENT AMPLIFIER FOR
CELLULAR/CORDLESS TELEPHONES
SUPPLY VOLTAGE:
Vcc = 2.4 to 3.3 V
LOW CURRENT CONSUMPTION:
Icc = 2.8 mA, TYP at 3.0 V
HIGH EFFICIENCY:
P
1
dB = -4 dBm, TYP at f = 1 GHz
POWER GAIN:
G
P
= 12.5 dB, TYP at f = 1 GHz
OPERATING FREQUENCY:
100 MHz to 1900 MHz (Output port LC matching)
EXCELLENT ISOLATION:
ISOL = 39 dB TYP at f = 1 GHz
HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT-363 package.
UPC8128TB
California Eastern Laboratories
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C, V
CC
= V
OUT
= 3.0 V, Z
L
= Z
S
= 50
, at LC matched frequency)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
Icc
Circuit Current, No signal
mA
1.8
2.8
3.8
G
P
Power Gain
f = 1.00 GHz
dB
9.5
12.5
14.5
f = 1.90 GHz
10.0
13.0
15.0
ISOL
Isolation
f = 1.00 GHz
dB
34.0
39.0
f = 1.90 GHz
32.0
37.0
Output Power
f = 1.00 GHz
dBm
-7.5
-4.0
P
1dB
at 1 dB Compression Point
f = 1.90 GHz
--8.5
-4.0
NF
Noise Figure
f = 1.00 GHz
dB
6.0
7.5
f = 1.90 GHz
6.0
7.5
RL
IN
Input Return Loss
f = 1.00 GHz
dB
2.0
5.0
(without matching circuit)
f = 1.90 GHz
2.5
5.5
RL
OUT
Output Return Loss
f = 1.00 GHz
dB
10.0
(with external matching circuit)
f = 1.90 GHz
14.0
IM
3
3rd Order Intermodulation Distortion
dBc
f
1
= 1.000 GHz, f
2
= 1.001 GHz, P
0(each)
= -20 dBm
-50.0
f
1
= 1.900 GHz, f
2
= 1.901 GHz, P
0(each)
= -20 dBm
-46.0
PART NUMBER
PACKAGE OUTLINE
UPC 8128TB
SO6
The UPC8128TB is a Silicon RFICs designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20GHz f
T
NESATTM III
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, the IC has excellent performance, uniformity
and reliability.
DESCRIPTION
V
CC
= 3.0 V
V
CC
= 2.4 V
V
CC
= 3.3 V
0.3
+20
+10
0
-10
3.0
1.0
V
CC
= 2.4 V
V
CC
= 3.3 V
V
CC
= 3.0 V
-10
+20
+10
0
0.3
1.0
3.0
Gain,
G
P
(dB)
Frequency, f (GHz)
GAIN vs.
FREQUENCYand VOLTAGE
Gain, Gp (dB)
Frequency, f (GHz)
GAIN vs. VOLTAGE and FREQUENCY
UPC8128TB
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CC
Supply Voltage
V
3.6
P
D
Total Power Dissipation
2
mW
200
T
A
Operating Temperature
C
-40 to +85
T
STG
Storage Temperature
C
-55 to +150
SYMBOLS
PARAMETERS
UNITS
MIN
TYP MAX
V
CC
Supply Voltage
V
2.4
3.0
3.3
T
A
Operating Temperature
C
-40
+25
+85
f
Operating Frequency
MHz
100
1900
RECOMMENDED
OPERATING CONDITIONS
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= 85
C).
Pin No.
Symbol
Applied Voltage
Description
Internal Equivalent Circuit
1
INPUT
4
OUTPUT
Vcc through external
inductor.
6
Vcc
2.4 to 3.3
2
GND
0
3
5
PIN FUNCTIONS
Signal output pin. This output is
designed as an open collector.
Due to the high impedance output
this pin should be externally
equipped with an LC matching
circuit.
Signal input pin. An internal
matching circuit provides a 50
match over a wide bandwidth.
This pin must be coupled to signal
source with a blocking capacitor.
Power supply pin. This pin should
be externally equipped with a bypass
capacitor to minimize ground
impedance.
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible. All the
ground pins must be connected
together with wide ground pattern
to minimize impedance difference.
UPC8128TB
1
2
5
3
4
6
UPC8128TB
V
CC
= 3.0 V
-40
+100
+60
+20
-20
-60
0
1
2
3
4
+80
+40
0
V
CC
= 3.0 V
V
CC
= 2.4 V
V
CC
= 3.3 V
0.3
+20
+10
0
-10
3.0
1.0
T
A
= +85
C
T
A
= +25
C
T
A
= -40
C
-40
0.3
-50
+20
-20
-30
0.1
+10
0
-10
3.0
1.0
V
CC
= 3.0 V
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25
C)
CIRCUIT CURRENT vs. TEMPERATURE
Temperature, T
A
(
C)
Circuit Current, I
CC
(mA)
Gain,
G
P
(dB)
Frequency, f (GHz)
Frequency, f (GHz)
GAIN vs.
FREQUENCYand VOLTAGE
CIRCUIT CURRENT vs. VOLTAGE
Circuit Current, I
CC
(mA)
Voltage, V
CC
(V)
-70
0.3
-30
-60
0.1
-40
-50
3.0
1.0
V
CC
= 3.0 V
V
CC
= 2.4 V
V
CC
= 3.3 V
T
A
= +85
C
T
A
= -40
C
T
A
= +25
C
-70
0.3
-30
-60
0.1
-40
-50
3.0
1.0
V
CC
= 3.0 V
Isolation,
I
SOL
(dB)
4
3
2
1
0
0
4
3
2
1
No Signal
GAIN vs.
FREQUENCY and TEMPERATURE
Gain,
G
P
(dB)
Frequency, f (GHz)
ISOLATION vs.
FREQUENCY and VOLTAGE
ISOLATION vs.
FREQUENCY and TEMPERATURE
Isolation,
I
SOL
(dB)
Frequency, f (GHz)
1.0 GHz Output Port Matching
UPC8128TB
Input Return Loss, RL
IN
(dB)
0
-20
-15
-10
-5
0.3
0.1
3.0
1.0
T
A
= +85
C
T
A
= -40
C
T
A
= +25
C
V
CC
= 3.0 V
-30
0.3
+10
-20
0.1
0
-10
3.0
1.0
V
CC
= 2.4 V
V
CC
= 3.3 V
V
CC
= 3.0 V
-30
0.3
+10
-20
0.1
0
-10
3.0
1.0
V
CC
= 3.0 V
T
A
= +85
C
T
A
= -40
C
T
A
= +25
C
TYPICAL PERFORMANCE CURVES
(Unless otherwise specified, T
A
= 25
C)
INPUT RETURN LOSS vs.
FREQUENCY and TEMPERATURE
Output
Power
,
P
OUT
(dBm)
Input Power, P
IN
(dBm)
OUTPUT POWER vs.
INPUT POWER and VOLTAGE
V
CC
= 3.0 V
V
CC
= 2.4 V
V
CC
= 3.3 V
+5
+5
0
-5
-10
-15
-20
-25
-30
-35
-40
-25
-20
-15
-10
-5
0
-30
+10
+5
+5
0
-5
-10
-15
-20
-25
-30
-35
-40
-25
-20
-15
-10
-5
0
T
A
= +85
C
T
A
= -40
C
T
A
= +25
C
V
CC
= 3.0 V
V
CC
= 3.0 V
V
CC
= 2.4 V
V
CC
= 3.3 V
0
-30
-25
-20
-15
-10
-5
0.3
0.1
3.0
1.0
Frequency, f (GHz)
OUTPUT RETURN LOSS vs.
FREQUENCY and VOLTAGE
OUTPUT RETURN LOSS vs.
FREQUENCY and TEMPERATURE
OUtput
Return
Loss,
R
L
OUT
(dBm)
Frequency, f (GHz)
Input Return Loss, RL
IN
(dB)
INPUT RETURN LOSS vs.
FREQUENCY and VOLTAGE
Frequency, f (GHz)
Frequency, f (GHz)
OUTPUT POWER vs.
INPUT POWER and TEMPERATURE
Input Power, P
IN
(dBm)
OUtput
Return
Loss,
R
L
OUT
(dBm)
1.0 GHz Output Port Matching
Output
Power
,
P
OUT
(dBm)
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