UPG2117K
NEC's VERSATILE 3V GSM
GaAs MMIC POWER AMPLIFIER
FEATURES
California Eastern Laboratories
ELECTRICAL CHARACTERISTICS
(unless otherwise specifi ed, T
A
= 25C, V
DD
1,2,3 = +3.2 V, V
abc
= +2.6 V, with
input and output matching)
PART NUMBER
PACKAGE OUTLINE
UPG2117K
K
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
Operating Frequency
MHz
880
928
P
OUT
Output Power at P
IN
= +5 dBm
dBm
34.5
1
-
-
RF Leakage Current (I
dd1
+ I
dd2
+ I
dd3
) at P
IN
(f
o
) <= +5
dBm, V
abc
= 10k ohm load, V
ref
= 0.04V
mA
-
-
35
1
RF Leakage Output Power at P
IN
= 0 to +10 dBm, V
ref
=
0.04V, V
abc
= 2.8V
dBm
-
-
-17
1
Power Control Slope at V
ref
= 0.04 to 1.8V,
V
ref
= 0.01V
RF
V
rms
/ V
ref
-
-
50:1
1
PAE
Power Added Effi ciency at P
IN
= +5dBm
%
50
1
-
-
Load Mismatch (Ruggedness) at Output VSWR 10 : 1 all
phase angles for 5 seconds
No performance degradation and
no module damage
DESCRIPTION
NEC's UPG2117K is a high power/high effi ciency 3 stage power
amplifi er developed primarily for GSM 900 applications. Use of
E-mode FET technology delivers high effi ciency and high linearity
with a single positive low voltage supply. It is housed in a small
4 x 4mm, 20 pin leadless package. On chip active bias circuitry
allows quiescent current to be individually selected via off chip gate
bias resistors. This on chip active bias circuitry helps to keep the
quiescent bias point constant over changes in temperature and
also minimizes changes due to normal wafer process variation.
External input and output circuit matching offers maximum design
fl exibility.
The UPG2117K can be used in combination with the UPG2118K
for dual band systems.
APPLICATIONS
E-MODE HJ-FET TECHNOLOGY/SINGLE
POSITIVE SUPPLY VOLTAGE
LOW VOLTAGE OPERATION: VDD = +3.2 V
HIGH EFFICIENCY: PAE = 57% TYP
20 PIN 4 X 4 MM SQUARE MICRO LEAD PACKAGE
(MLP)
3V GSM CELLULAR
900 MHz ISM
Note:
1. Guaranteed at 880-915 MHz
UPG2117K
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
Notes:
1. Operation in excess of any one of these parameters may
result in permanent damage.
2. No RF Applied
SYMBOL
PARAMETERS
UNIT
RATINGS
Vgg 1, 2, 3
Bias Reference Voltage 1, 2, 3
Note 2
V
5
Vatt
Attenuator Supply Voltage
Note 2
V
5
Vdd 1, 2, 3
Supply Voltage 1, 2, 3
Note 2
V
8
Vabc
ABC Supply Voltage
Note 2
V
8
P
IN
Input Power
dBm
15
P
1
Continuous Power Dissipation / 1st Stage at 85 C
W
0.1
P
2
Continuous Power Dissipation / 2nd Stage at 85 C
W
0.6
P
3
Continuous Power Dissipation / 3rd Stage at 85 C
W
4
P
TOT
Continuous Power Dissipation / Total Package at 85 C
W
4
T
CH
Channel Temperature
C
150
Topt
Operating Temperature
C
-40 to +85
Tstg
Storage Temperature
C
-40 to +85
RECOMMENDED OPERATING CON DI TIONS
SYMBOL
PARAMETERS
UNIT
MIN.
TYP
MAX
V
DD
1, 2,3
Supply Voltage 1, 2,3
V
2.6
3.2
5.5
V
gg
1, 2, 3
Reference Voltage 1, 2
V
0.04
1.8
Vabc
ABC Voltage (to turn on device)
1.7
2.6
5.5
P
IN
Input Power
dBm
0
5
10
UPG2117K
TYPICAL PERFORMANCE CURVES
20.0
25.0
30.0
35.0
40.0
45.0
50.0
18
20
22
24
26
28
30
32
36
34
0
10
20
30
40
50
60
PAE
Freq = 900 MHz
Temp = 25C
Vd = 3.2V
Vabc = 2.6V
Vref = 1.8V
Vth = 0.2V
Gain
INPUT POWER SWEEP
Gain, G (dB)
Power Added
Ef
fi
ciency
, P
AE (%)
Output Power, Pout (dBm)
29.0
30.0
31.0
32.0
33.0
35.0
34.0
36.0
875
900
880
905
885
910
890
915
895
920
32
36
40
44
48
52
56
60
Pin = 5.0dBm
Temp = 25C
Vd = 3.2V
Vabc = 2.6V
Vref = 1.8V
Vth = 0.2V
P
out
PAE
Gain
FREQUENCY SWEEP
Frequency, f (MHz)
Power Added
Ef
fi
ciency
, P
AE (%)
Output Power
, Pout (dBm)
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