GaAs HBT INTEGRATED CIRCUIT
uPG2314T5N
POWER AMPLIFIER FOR Bluetooth
TM
Class1
DESCRIPTION
The uPG2314T5N is a GaAs HBT MMIC power amplifier which was developed for Bluetooth
TM
Class1.
This device realizes high efficiency, high gain and high output power by using InGaP HBT.
This device is housed in a 6-pin TSON Thin Small Out-line Non-Leaded package. And this package is able to high-density
surface mounting.
FEATURES
Operating Frequency
: f
opt
= 2400 to 2500MHz 2450MHz TYP.
Supply Voltage
: V
CC1,2
= 2.7 to 3.6V 3.0V TYP.
Control Voltage
: V
cont
= 0 to 3.6V 3.0V TYP.
: V
bias
+ V
enable
= 0 to 3.1V 3.0V TYP.
Circuit Current : I
CC
= 65mA TYP. @ V
CC1,2
= 3.0V, V
bias
+ V
enable
= 3.0V, V
cont
= 3.0V, P
in
= 0dBm
Output Power
: P
out
= +20.0dBm TYP.@ V
CC1,2
= 3.0V, V
bias
+ V
enable
= 3.0V, V
cont
= 3.0V, P
in
= 0dBm
Gain Control Range : GCR = 23dB TYP.@ V
CC1,2
= 3.0V, V
bias
+ V
enable
= 3.0V, V
cont
= 0 to 3.0V, P
in
= 0dBm
High Efficiency
: PAE = 50
TYP.
High-density surface mounting : 6-pin TSON package 1.5
1.5
0.37 mm
APPLICATION
Power Amplifier for Bluetooth
TM
Class1
ORDERING INFORMATION
Remark
T
o order evaluation samples, contact your nearby sales office.
Part number for sample order : uPG2314T5N
Document No. PG*****EJW8V0PDS ( 8th edition )
Date Published April 2006 CP(K)
PRELIMINARY DATA SHEET
Caution Electro-static sensitive devices
uPG2314T5N E2
Part Number
Embossed tape 8 mm wide
Pin1,6 face the perforation side of tape
Qty 3kpcs/reel
G5D
6-pin plastic TSON
Pb-Free
uPG2314T5N E2 A
Supplying Form
Marking
Package
Order Number
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
uPG2314T5N
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
ASOLUTE MAXIMUM RATINGS Unless otherwise specified, T
A
= +25
2
Preliminary Data Sheet
RECOMMENDED OPERATING RANGE
Unless otherwise specified, T
A
= +25
GND
6
OUTPUT / V
CC2
1
V
bias
+ V
enable
2
V
cont
3
INPUT
4
V
CC1
5
Pin Name
Pin No
Top View
Top View
Bottom View
G5D
1
3
2
6
4
5
1
3
2
6
4
5
Bias Circuit
Bias Circuit
3
1
2
4
6
5
mW
700
Note
P
D
Power Dissipation
mA
0.5
I
cont
Control Current
mA
400
I
CC
Circuit Current
V
3.6
V
cont
Control Voltage
V
3.6
V
bias
+ V
enable
-55
+150
T
stg
Storage Temperature
-40
+ 85
T
A
Operating Ambient Temperature
dBm
+10
P
in
Input Power
V
5.5
V
CC1,2
Supply Voltage
Unit
Ratings
Symbol
Parameter
Note. Mounted on double copper-clad 50
50
1.6mm epoxy glass PWB, T
A
= +85
V
3.1
3.0
0
V
bias
+ V
enable
V
3.6
3.0
2.7
V
CC1,
V
CC2
Supply Voltage
V
3.6
3.0
0
V
cont
Control Voltage
MHz
2500
2450
2400
f
opt
Operating Frequency
Unit
MAX.
TYP.
MIN.
Symbol
Parameter
4590 P a t r ick Hen r y Drive
San t a C l ara, CA 9505 4- 181 7
Teleph o n e : ( 408) 919- 25 00
Facsim ile: ( 408 ) 988- 027 9
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with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electron ic equipment (RoHS) an d the requir e ments of EU Directive
2003/11/EC Restriction o n Penta and Octa BDE.
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that the device is Pb-fre e. The AZ suffix is use d to designa te devices containing Pb which are
exempted from the requirement of Ro HS directive (*). In all cases the de vices have Pb-free terminals.
All devices with these suffixes meet the require ments of the RoHS directive.
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go into its pr oducts as of the date of disclo s ure o f this inform ation.
Re st rict e d S u bst a n c e
per RoHS
Con c e n tratio n Limit per RoHS
(value s are n o t yet fixed)
Con c e n tratio n contai ned
in CEL devices
- A
- A Z
Lead (P b)
< 100 0 PPM
Not Dete cted
(*)
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< 100 0 PPM
Not Dete cted
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< 100 PPM
Not Dete cted
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< 100 0 PPM
Not Dete cted
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< 1000 PPM
Not Detec t ed
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< 1000 PPM
Not Detec t ed
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