(SEE REVERSE SIDE)
R0
C103Y
C103YY
C103A
C103B
SILICON CONTROLLED RECTIFIER
0.8 AMP, 30 THRU 200 VOLTS
TO-92 CASE
DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for
control systems and sensing circuit applications.
MAXIMUM RATINGS (TC=25C unless otherwise noted)
SYMBOL
C103Y C103YY C103A C103B UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM 30 60
100 200
V
RMS On-State Current (TC=60C)
IT(RMS)
0.8
A
Peak One Cycle Surge
ITSM
8.0
A
Peak Forward Gate Current
IGM
0.5
A
Peak Reverse Gate Voltage
VGM
8.0
V
Peak Gate Power Dissipation (tp=8.3ms)
PGM
1.0
W
Average Gate Power Dissipation
PG(AV)
0.01
W
Storage
Temperature
Tstg
-65 to +150
C
Junction
Temperature
TJ
-65 to +125
C
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNITS
IDRM, IRRM Rated VDRM, VRRM, RGK=1K
1.0
A
IDRM, IRRM Rated VDRM, VRRM, TC=125C, RGK=1K
50
A
IGT
VD=6.0V, RL=100, RGK=1K
200
A
IGT
VD=6.0V, RL=100, RGK=1K, TC=-65C
500
A
IH
RGK=1K
5.0
mA
IH
RGK=1K, TC=-65C
10
mA
VGT
VD=6.0V, RL=100
0.8
V
VGT
VD=6.0V, RL=100, TC=-65C
1.0
V
VGT
VD=6.0V, RL=1K, TC=125C
0.1
V
VTM
ITM=1.0A
1.5
V
dv/dt
VD=VDRM, TC=125C, RGK=1K
20
V/
s
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