64
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Peak Repetitive Forward Current
IFRM
250
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VF
IF=0.1mA
.580
.665
.680
V
VF
IF=1.0mA
.665
.745
.760
V
VF
IF=5.0mA
.725
.805
.820
V
VF
IF=10mA
.750
.825
.840
V
VF
IF=100mA
.870
.920
.960
V
IR
VR=4.0V
5.0
A
CT
VR=0, f=1 MHz
140
pF
SOT-23 CASE
CBAS17
LOW VOLTAGE STABISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAS17
type is a planar epitaxial silicon switching
diode, designed for low voltage stabilizing
applications.
Marking code is A91.
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