DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCX68,
CBCX69 types are complementary silicon
transistor manufactured by epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring high
current capability.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Emitter Voltage
VCES
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Collector Current-Peak
ICM
2.0
A
Base Current
IB
100
mA
Base Current Peak
IBM
200
mA
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Temperature
JA
104
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=25V
100
nA
ICBO
VCB=25V, TA=150C
10
A
IEBO
VEB=5.0V
10
A
BVCBO
IC=10A
25
V
BVCEO
IC=10mA
20
V
BVEBO
IE=1.0A
5.0
V
VCE(SAT)
IC=1.0A, IB=100mA
0.5
V
VBE(ON)
VCE=10V,IC=5.0mA
0.6
V
VBE(ON)
VCE=1.0V, IC=1.0A
1.0
V
hFE
VCE=10V,IC=500mA
50
hFE
VCE=1.0,IC=500mA
85
375
hFE
VCE=1.0V, IC=1.0A
60
fT
VCE=5.0V,IC=10mA, f=20MHz
65
MHz
CBCX68 NPN
CBCX69 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
SMALL SIGNAL TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R6 (20-February 2003)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CBCX68 NPN
CBCX69 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
SMALL SIGNAL TRANSISTORS
A
C
E
G
F
H
J
K
M
L
B
R3
1
3
2
R6 (20-February 2003)
BOTTOM VIEW
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