MAXIMUM RATINGS: (TA=25C unless otherwise noted)
SYMBOL
CBR1U-D010S
CBR1U-D020S
UNITS
Peak Repetitive Reverse Voltage
VRRM
100
200
V
DC Blocking Voltage
VR
100
200
V
RMS Reverse Voltage
VR(RMS)
70
140
V
Average Forward Current (TA=40C)
IO
1.0
A
Peak Forward Surge Current
IFSM
50
A
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
40
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
VF
IF=1.0A (Per Diode)
1.05
V
IR
VR=Rated VRRM
5.0
A
IR
VR=Rated VRRM, TA=125C
1.0
mA
trr
IF=500mA, IR=1.0A, Irr=250mA
50
ns
CBR1U-D010S
CBR1U-D020S
SURFACE MOUNT
1.0 AMP ULTRA FAST
SILICON BRIDGE RECTIFIER
SMDIP CASE
Central
Semiconductor Corp.
TM
R2 (13-November 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1U-
D010S, CBR1U-D020S types are silicon full
wave ultra fast bridge rectifier mounted in a
durable epoxy surface mount molded case,
utilizing glass passivated chips.
MARKING CODE: FULL PART NUMBER
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