MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
50
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=100V
500
nA
IEBO
VEB=4.0V
500
nA
BVCBO
IC=50A
120
V
BVCEO
IC=1.0mA
120
V
BVEBO
IE=50A
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
500
mV
hFE
VCE=6.0V, IC=2.0mA
180
820
fT
VCE=12V, IE=2.0mA, f=100MHz
140
MHz
CFMS4
SURFACE MOUNT
DUAL, COMMON BASE,
SILICON PNP TRANSISTORS
SOT-25 CASE
Central
Semiconductor Corp.
TM
R0 (20-July 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CFMS4
consists of two silicon PNP transistors in a
common base configuration, manufactured by the
epitaxial planar process and epoxy molded in a
space saving SOT-25 surface mount package.
This device has been designed for small signal
applications where a high breakdown voltage is
required.
MARKING CODE: CFMS4
MIN
MAX
MIN
MAX
A
0.004 0.007
0.11
0.19
B
0.016
-
0.40
-
C
-
0.004
-
0.10
D
0.039 0.047
1.00
1.20
E
0.074 0.075
1.88
1.92
F
0.037 0.038
0.93
0.97
G
0.102 0.118
2.60
3.00
H
0.059 0.067
1.50
1.70
I
J
0.110 0.118
2.80
3.00
SOT-25 (REV: R0)
0.41
0.016
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
SOT-25 CASE - MECHANICAL OUTLINE
CFMS4
SURFACE MOUNT
DUAL, COMMON BASE,
SILICON PNP TRANSISTORS
R0 (20-July 2004)
LEAD CODE:
1) Emitter Q1
2) Base Q1, Q2
3) Emitter Q2
4) Collector Q2
5) Collector Q1
MARKING CODE: CFMS4
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