CJD122 NPN
CJD127 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
DPAK TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R1 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122,
CJD127 types are Complementary Silicon Power
Darlington Transistors manufactured in a surface
mount package designed for low speed switching
and amplifier applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
8.0
A
Peak Collector Current
ICM
16
A
Base Current
IB
120
mA
Power Dissipation
PD
20
W
Power Dissipation (TA=25C)
PD
1.75
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JC
6.25
C/W
Thermal Resistance
JA
71.4
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICEO
VCE=50V
10
A
ICEV
VCE=100V, VBE(off)=1.5V
10
A
ICEV
VCE=100V, VBE(off)=1.5V, TC=125oC
500
A
ICBO
VCB=100V
10
A
IEBO
VEB=5.0V
2.0
mA
BVCEO
IC=30mA
100
V
VCE(SAT)
IC=4.0A, IB=16mA
2.0
V
VCE(SAT)
IC=8.0A, IB=80mA
4.0
V
VBE(SAT)
IC=8.0A, IB=80mA
4.5
V
VBE(ON)
VCE=4.0V, IC=4.0A
2.8
V
hFE
VCE=4.0V, IC=4.0A
1000
12000
hFE
VCE=4.0V, IC=8.0A
100
fT
VCE=4.0V, IC=3.0A, f=1.0MHz
4.0
MHz
Cob
VCB=10V, IE=0, f=1.0MHz (CJD122)
200
pF
Cob
VCB=10V, IE=0, f=1.0MHz (CJD127)
300
pF
hfe
VCE=4.0V, IC=3.0A, f=1.0kHz
300
Central
Semiconductor Corp.
TM
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
CJD122 NPN
CJD127 PNP
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
R1 (26-September 2002)
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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