CJD200 NPN
CJD210 PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
DPAK TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R1 (26-August 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD200,
CJD210 types are Complementary Silicon Power
Transistors manufactured in a surface mount
package designed for high current amplifier
applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
8.0
V
Continuous Collector Current
IC
5.0
A
Peak Collector Current
ICM
10
A
Base Current
IB
1.0
A
Power Dissipation
PD
12.5
W
Power Dissipation (TA=25C)
PD
1.4
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JC
10
C/W
Thermal Resistance
JA
89.3
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=40V
100
nA
ICBO
VCB=40V, TC=125C
100
A
IEBO
VEB=8.0V
100
nA
BVCEO
IC=10mA
25
V
VCE(SAT)
IC=500mA, IB=50mA
0.3
V
VCE(SAT)
IC=2.0A, IB=200mA
0.75
V
VCE(SAT)
IC=5.0A, IB=1.0A
1.8
V
VBE(SAT)
IC=5.0A, IB=1.0A
2.5
V
VBE(ON)
VCE=1.0V, IC=2.0A
1.6
V
hFE
VCE=1.0V, IC=500mA
70
hFE
VCE=1.0V, IC=2.0A
45
180
hFE
VCE=2.0V, IC=5.0A
10
fT
VCE=10V, IC=100mA, f=10MHz
65
MHz
Cob
VCB=10V, IE=0, f=0.1MHz (CJD200)
80
pF
Cob
VCB=10V, IE=0, f=0.1MHz (CJD210)
120
pF
Central
Semiconductor Corp.
TM
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
CJD200 NPN
CJD210 PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
R1 (26-August 2002)
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART NUMBER
PDF 
ZIP